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Part Manufacturer Description Datasheet BUY
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode 1n6

Catalog Datasheet MFG & Type PDF Document Tags

diode 1n6

Abstract: mitsubishi diode relay -UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 80C 09272 D"7"-VS- 6249826 MITSUBISHI ELEK (LINEAR , diode and 20kfi resistor in series to allow a negative voltage input. Between pin 9 and each out, there , state. PIN CONFIGURATION (TOP VIEW) ini â'"[T IN2â'" |T IN3â'"[J IN4â'"⺠[T INSâ'"Q[ 1N6 â'" [j , -h40 V 'c Cotlector current Transistor ON 400 mA V, Input voltage -40â'"1-40 V If(D> Clamp diode forward current 400 mA Vridi Clamp diode reverse voltage 40 V Pd Power dissipation Ta=25"C 1.47 â  W
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1N348

Abstract: 1N34A ,400 1.0 5 5 0 30 1.000 25.400 . 1 80 1.0 5 1 50 500 . 1N6 0 , to ambient. J * JEDEC Registered Data. (1) TA= 7 5 0C POLARITY: Diode to be operated with
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t1n6

Abstract: M2004P CLAMP DIODE D E S C R I P T IO N The M2004, 7-channel sink driver, consists of 14 NPN transistors , IN2 IN3 INPUT IN4 - IN 5 -* [ T 1N6 - | T OE tin OE B 3 3 - « 01 ¡S - 02 «03 > 04 , otherwise noted) Parameter Output sustaining voltage Collector current Input voltage Clamp diode forward current Clamp diode reverse voltage Power dissipation Operating ambient temperature range Storage , TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATIONAL CONDITIONS Symbol Vo Output voltage Percent
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M2004P t1n6 2004P ULN2004A

2987A

Abstract: udn2987a - â'"{> 1 n j [ inâ'" â'"> in4 [ 4J- â'"1> in5 I 5j- 1n6[ inâ'" in7 [ â'" â'"> in8[ inâ'" â'"D , '" 15 (jlA Clamp Diode Leakage Current Ir VR = 35 V, Ta = 70°C â'" â'" 50 |xA Clamp Diode Forward
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UDN-2987A 2987A udn2987a diode 1n6 UDN2987 A1328 Sprague Electric UPISI-2987A

5962-8764001WX

Abstract: guardian relay ]OUT2 ÃÏÏ|OÛT3 iüout4 h com MIC5800BN, AJ, BM clear q strobe [2 IN1 Q IN2Q IN3[5 IN4 jj[ IN5[7 1N6 , Open, Inputs = 0 V 50 100 Clamp Diode Leakage Current IR vr = 50 v,ta=+25°c 50 HA Vr = 50 V, Ta = +70°C 100 Clamp Diode Forward Voltage vf If = 350 mA 1.7 2.0 V NOTE : Operation of these
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MIC5800 MIC5801 1725-1C-12D 5962-8764001WX guardian relay MIC5800AJB 59628764001wx MIC5800/5801

220v AC voltage regulator schematic diagram igbt based

Abstract: 1 HP SINGLE PHASE induction motor speed control using pwm inverter , corresponding with input PWM control signals INI through 1N6. After power-up, RESET pin on the J3 connector must , , a diode should be connected between VDD (anode) and Vcc (cathode) to ensure that VDD does not exceed
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220v AC voltage regulator schematic diagram igbt based 1 HP SINGLE PHASE induction motor speed control using pwm inverter 230v dc 5a rectifier diode pwm inverter output filter schematic 220v DC MOTOR SPEED CONTROLLER schematic 5v dc to 220v ac inverter CIRCUIT DIAGRAM

transistor 2N4

Abstract: ST25C transistor DIODES The primary considerations in the selection of a replace­ ment diode are the maximum forward , type as the diode being replaced. In some cases, how­ ever, germanium diodes may be used to replace silicon diodes, or vice versa. This is particularly true where the diode is being used as a rectifying
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transistor 2N4 ST25C transistor 2SA114 TFK 808 2N407 transistor 2N1177

AN2846

Abstract: schematic inductive proximity sensor state filter Input state register Figure 21. Parity bit generation example. 1N7 1N6 1N5 , voltage regulator. The LEDs must be chosen according to their input diode drop voltage. LED outputs can , surge is applied the input diode is biased in forward mode and the current is 0.45 mA (see Figure 42
STMicroelectronics
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AN2846 schematic inductive proximity sensor PZT2N2907A MELF pad layout CWS500C DVR8 STEVAL-IFP000V1

Germanium Diode aa116

Abstract: 20680 JRC S35 A TSC Description Diode -160 PIV Rectifier - 200 PIV Rectifier - 450 PIV PRECEDING MANUFACTURER , '" Available to MIL spec. , diode 2 â'" Base turn off UNDER USE Section 11 1 â'" UHF mixer 2 â'" Photodiode (Si & Ge devices) 3 â'" Photoconductive cell 4 â'" Solar cell 5 â'" Backward diode 6 7 8 M FOLLOWING VF - , are shown below: ) N-Type Forward (b) S-Type Forward (c) Conventional Diode Characteristic
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Germanium Diode aa116 20680 JRC 110B6 Germanium itt 1N21 itt zx15

IN3492

Abstract: sg 4001 diode 7 3 1 0 A 7 ,0 ^ 2 0 2 ,lN ^ 6 d f 1N&6^, 1N & 70, lf l 8 > l , 1n 6 l l 1 N 8 7 3 ,1 N 8 7 A ,1 N , S 2 5 ° C DIODE 1N38B 1N39A 1N39B 1NA3 1NAA INA 5 1NA6 1NA7 1NA8A 1N57A IN 5A A , A 125 125 0 .6 300 G 300 G NIAX VALUES 0 25 ° DIODE 1NI1B 1N 118 A 1N 126 1N , , 1NA5 IN A 5 GP 1N6 7 A , 1 N 1 9 8 , 1 N 1 9 8 B , 1 N 1 9 1 , 1 N 7 0 A , T I - 2 5 3 , 1 N A 5 SW , VALUES e 2 5 ° DIODE 1N 298A Vw 35 PRV If Vf 50 20 1 .5 50 Ir 5000 20
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IN3492 sg 4001 diode 1NA4 md914 1N20b 1N488 DA200 0A202 1N34A 1N34AL PR9163 PR9163R

Diode SOT-23 marking 15d

Abstract: pk 1n6 1.5KE * SOT­23, Dual Diode, Common Anode MMBZ5V6 40 24 15 V, 17 V * SOT­23, Dual Diode, Common Cathode MMBZ15VD 46 150 6.1 V * SC­88A/SOT­353, C = 90 pF, Quad Diode MSQA6V1 92 150 5.6 V­33 V SC­59, C = 280 pF, Quad Diode MMQA ­ 400 5 V­78 V SMA 1SMA5.0A , Circuit Protection Response Time is Typically < 1 ns AXIAL LEAD CASE 41A PLASTIC L 1N6 xxxA
ON Semiconductor
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Diode SOT-23 marking 15d pk 1n6 1.5KE THYRISTOR 308 f Power Board GDP 002 94V GGP DIODE 503 DIODE MARKING CODE SG 88A BRD8009/D BRD8009 DLD601

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A : Technical Information, Application Notes and Articles . . . . . . . . . . . . . . . . . . Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . Zener Diode Fabrication Techniques . . . . . . , Zener Diode Characteristics . . . . . . . . . . . . . . . . . . . . Temperature Compensated Zeners . . .
ON Semiconductor
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GE Transient Voltage Suppression Manual diode 930 6V8A Bidirectional Diode Thyristors 1.5ke 30A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual DL150/D

orient 817b

Abstract: UJT-2N2646 Articles . . . . . . . . . . . . . . . . . . Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . Zener Diode Fabrication Techniques . . . . . . . . . . . . . Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Zener Diode Characteristics . . . . . . .
ON Semiconductor
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orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500

transistor c2060

Abstract: Germanium itt DR â'" Diode, Reference DZ â'" Diode, Zener DS â'" Diode, Signal SH A D IN G IN D IC ATE S
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transistor c2060 IN939 Transistor Shortform Datasheet & Cross References 2N158 JAN MDA950A transistor C2026 AN-134
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