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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode 1N645

Catalog Datasheet MFG & Type PDF Document Tags

DIODE 1N649

Abstract: diode 1N645 -19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1 1N649-1, JAN, JANTX, JANTXV, AND JANS MIL-S , -19500/240E sVp»D?r;992 MIL-S-19500/24ÃD 5 April 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1, 1N649-1, JAN, JANTX, JANTXV , silicon diode. Four levels of product assurance are provided for each device type as specified in MIL-S
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DIODE 1N649 diode 1N645 JANTX markings on diode marking 332 military part marking symbols jan 1N649 JANTX MIL-S-19500/240E D00127S MIL-S-19500

diode 1N645

Abstract: 1N34 DIODE 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f T e le x 948318 (617) 872-7520 (-
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1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34 GDC645 1IT646 1N270 GDC270 1H273 GDC273

Germanium diode

Abstract: 5 amp diode rectifiers 1N461A thru 1N463A 1N482B thru 1N486B 1N486 1N645 1N647 1N649 1N658thru 1N661 1N695 1N695A 1N746A thru , thru 1N4936 Gold Gold Gold Gold O f P art N Diode Diode Diode Diode um bers 32 32 32 32 32 , Bonded Germ anium Germanium Germanium Germ anium Page Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diode 400m A Rectifier 400m A
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Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 1N34A 1N38A 1N60A 1N100A 1N276 1N277

DIODE 1N649

Abstract: 1n41481 zener diode M Part Number 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 thru 1N759A-1 1N914 1N962B-1 thru 1N973B-1 1N 974B & -1 thru 1N 992B & -1 1N3070/1 N3070-1 1N3287 1N3595/1 N3595-1 1N 3666 (1 & 2 ) 1N4099, C, D, & -1 thru 1N4121, C, D, & -1 1N4148-1 1N415 0 /1 N 4150-1 1 N4153/1N4153-1 ilitary Qual Level JAN, JAN TX, JAN TX V JAN, JAN TX, JAN TX V JAN, JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN, JAN TX , Noise Zener Diodes Small Signal Switching Diode - MELF General Purpose Rectifiers Fast Recovery
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1n41481 zener diode 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454 1N645/1N645-1 1N4454/1N4454-1 1N4496 1N4625 N4627 1N4938/1N4938-1

kpbc10

Abstract: diode 1N645 1N645 6L34D 6 Y MOS-200 GPÛ8D MPG06D## 300 1N646 BYM05-400 ' MPG06GS 400 1N647 , Superectlfier #: Uses glass passivated chip C RECTIFIER AND ZENER DIODE SELECTOR GUIDE & CROSS REFERENCE , than the length of the component involved. RECTIFIER AND 2ENER DIODE SELECTOR GUIDE & CROSS , ) RECTIFIER AND ZENER DIODE SELECTOR GUIDE & CROSS REFERENCE 47 GENERAL INSTRUMENT GENL INSTR/ POWER , polarity cathode oriented toward sproket holes) RECTIFIER AND ZENER DIODE SELECTOR GUIDE & CROSS
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kpbc10 EFR135 JTX1N4942 gp20 diode SMD zener diode 203 D041 GL-34 D0204MB MPG06 BYM05-50 MPG06A 1N483B

2N2222 pnp

Abstract: IC free 0.68F capacitor to discharge through the diode, resetting the capacitor to 0V. The 820pF unit provides , LT1056 ­ + 200V C1 LT1011 14.7k + 10k 15V 1N645 250 3k 100M* 2N3440 2k 1 ­15V 1N645 1N914 0.01 7 L 15V 39k 22k ­15V 0.02 1.2M* ­ , voltage is required to bring its negative input to ground potential. The diode drops in the bridge's ­5V , resistor and diode drops in its supply lines. At 3mV output per volt of bridge drive, full-scale signal is
Linear Technology
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2N2222 pnp IC free Vernitron potentiometer 2n2222 -331 2n2222 -331 transistors ultrasonic transducer polaroid AN7-15 AN7-16

DIODE 1N649

Abstract: diode 351 MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE , for use as a general purpose silicon rectifier diode or as a low speed switching rectifier diode , Specification for. Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661US , defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. The specified lead diameters apply in the zone between .050 (1.27 mm) from the diode body to the
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1N645UR-1 1N647UR-1 1N649UR-1 DO-213AA diode 351 1N649-1 JANTX 1N647-1 JANTX equivalent 1N649UR1 JAN 1N647-1 JANTXV DIODE 1N6661 MIL-PRF-19500/240R MIL-PRF-19500 DO-35

cp4071

Abstract: data sheet IC 7408 Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154 1850-0156 1850-0170 1850-0172 , 1N1084 1N540 1N253 1N1344 BA220 1N645 1N3209 1N645 1N3064 1N4150 1N4148 1N4607 1N4148 1N3210 , KBPC25005P-11 SCAJ1 A2SO97 A14P D1561CE 1N645 MSD6150 5082-2805 MR1126 MR1128 CA3019 ED6240
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cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 LM103-2 CA3026 CA3018 MPQ6842 CA3046 CA3045

BA100 diode

Abstract: BA102 DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 AA117 , 1N560 1N562 1N627 1N629 1N645 IN 647 1N649 1N661 OA74 1N662 1N926 1N1145 1N1202 1N1487 IN 1491 1N 1492 , 1N19B 1N482 AAZ15 1N4B5B 1N1200 1N1614 1N1734 1N3064 1N3070 1N4B3B 1N100A 1N645 BYY24 1N1699 BY 250 OAB1 , -46-88, 1S182. AAY28. 53 1N636 1N643 1N645 1N646 1N647 1N648 1N649 1N658 1N659 1N660 1N661 1N662/3 1N673 1N676
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BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 AA118 AA119 AA120 AA121 AA123 AA130

FD6666 diode

Abstract: diode BY100 DIODE AND RECTI FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 â'¢ AA117 AA118 AA119 AA120 AA121 AA123 AA130 AA131 AA132 AA133 AA134 AA135 AA136 AA137 AA138 BY 127 BY127 AA118 , 1N253 1N270 1N281 1N461 1N538 1N560 1N562 1N627 1N629 1N645 1N647 1N649 1N661 ^ OA74 1N662 1N926 1N1145 , 1N485B 1N 1200 1N1614 1N1734 1N3064 1N3070 1N483B 1N 100A 1N645 BYY24 1N1699 BY250 OA81 1N3845 O A 20 0
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FD6666 diode diode BY100 1N4Q07 BY164 diode aa119 1N82 BAY63 1N4002 1N4004 1N4005 1N4006 1N4007

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode , TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS® TI Worldwide Sales Offices ALABAMA: Huntayille, 4717 University Dr , . Texas Instruments INCORPORATED The Transistor and Diode Data Book for Design Engineers First Edition , DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

MCP3020Z

Abstract: 1826-0138 polarity diode connected across the output terminals so that if operated in series with other supplies
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E3616A MCP3020Z 1826-0138 3590S-A17-103 agilent E3615A E3615-60002 e3631 E3614A KR83503035 E3615A KR83506197 KR83502651

IC HXJ 2038

Abstract: 1N52398 Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER , SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS , T E D The T ransistor and Diode Data Book Design Engineers First Edition for T e x a s In s , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the
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IC HXJ 2038 1N52398 tfk 102 cny 70 DB5T hxj 2038 rca 40361 transistor

TIS43

Abstract: BF257 Texas The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library , 53 â'™ TRANSISTOR DATA SHEETS Page 69 DIODE PRODUCT SPECTRUM Page 423 DIODE SELECTION GUIDES Page 429 DIODE DATA SHEETS Page 437 CV/BS 9000 SELECTION GUIDE Page 555 â , characteristics are governed by the flo w o f charge carriers w ith in a sem iconductor. sem iconductor diode
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TIS43 BF257 Texas equivalent of transistor bc214 equivalent of transistor bc212 bc 214 BF195 equivalent is920 equivalent BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672

silec

Abstract: 1N6227 Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER , SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS , T E D The T ransistor and Diode Data Book Design Engineers First Edition for T e x a s In s , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the
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silec 1N6227 GG 84 2G300 1n623 chn 543

IN3492

Abstract: sg 4001 diode S 2 5 ° C DIODE 1N38B 1N39A 1N39B 1NA3 1NAA INA 5 1NA6 1NA7 1NA8A 1N57A IN 5A A , A 125 125 0 .6 300 G 300 G NIAX VALUES 0 25 ° DIODE 1NI1B 1N 118 A 1N 126 1N , VALUES e 2 5 ° DIODE 1N 298A Vw 35 PRV If Vf 50 20 1 .5 50 Ir 5000 20 , 9 9 7 , 1N207 u T Y MAX VAI UES â'¢ 2 5 ° DIODE 1N 252 1N 253 1N 2 5 3 J a N 1n 2 5 5 , 8 8 3 ,1 N 8 8 4 IR 15 MAX VALUES 0 2 5 ° DIODE vâ'ž PRV Vf If IR T Y P
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IN3492 sg 4001 diode 1NA4 175e100 diode 1n6 md914 DA200 0A202 1N34AL PR9163 PR9163R PR9164

SN72710L

Abstract: MC1013P & HEAD TACH PREAM P Pin 5 tied to case on metal can C 0 Zener diode and Voltage Follower , PIN 1. 2. 3. 4. 5. 6. 31 NUMBERS Anode (+) Cathode (-) NC Emitter Collector Base Input Diode Output , 6-2 91 30-17 A M P F X I n T T 586-316 CA 3039 2 CA 3045 7 4 3 o o- DIODE ARRAY 12 LEAD TO
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SN72710L MC1013P MC680P 796HC MC814G mc1235l LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP

3TE445

Abstract: 6ej7 Diode Connections Transistor Base Diagrams ' Diode and R e c tifie r Connections Integrated Circuit , Grid-anode capacitance Grid-cathode capacitance Centre tap Distortion Double beam tetrode Double diode Double , . resistance Cathode bias resistance Optimum load resistance Single diode Secondary emission Special quality Triode Trip le diode Triode heptode Triode hexode Triode pentode Tetrode Voltage doubler Variable mu , ), (DD) and (T ) for single or double diode and triode, respectively. Replacement: No longer
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3TE445 6ej7 2N3303 TAA*310 GEX36/7 BYY32 H101/A SL621C 2300E/830 111/A SL630 CD2301/961
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