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BQ24002PWP Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 visit Texas Instruments Buy
BQ24002PWPG4 Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 visit Texas Instruments
BQ24002PWPRG4 Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 visit Texas Instruments
BQ24002PWPR Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 visit Texas Instruments
BQ24002RGWR Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-VQFN -40 to 70 visit Texas Instruments Buy
ISL54002IRTZ-T Intersil Corporation Integrated Audio Amplifier Systems; TQFN20; Temp Range: -40° to 85°C visit Intersil Buy

diode 1N 4002

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 0 . AL LE GR O K r.i' â  â'¢ MICROSYSTEMS INC 13 D â  0SDM33fl D 0 0 3 7 Ã" S Ã" T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications. ABSOLUTE MAXIMUM RATINGS Peak Repetitive Voltage, VRRM. 200 V Peak Reverse Working Voltage, V RWM. 200V DC Blocking Voltage, V R -
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0SDM33

1N4007

Abstract: 1N4001 resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 UNITS VRRM VRMS VDC 50 35 50 , t,PULSE DURATION,sec. 100 KD Diode
KD Diode
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1N4007 DO-41 MIL-STD-750

free diode 1n4001

Abstract: 1N4007 DO-41 package CDIL ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION 1N 4001 50 1N 4002 100 1N 4003 200 1N 4004 400 1N 1N 1N 4005 4006 4007 600 800 1000 VRSM 60 120 240 480 720 1000 , dimensions are in mm. LEADER DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0
Continental Device India
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free diode 1n4001 1N4007 DO-41 package CDIL diode 1N4001 specifications 1n4007 cdil diode diode 1N 4002 1n4007 cdil QSC/L-000019 C-120 1N4007R 030103E

1N400x

Abstract: %. Symbol RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 , ® 1N4001 â'" 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High , Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 420 560 700
Won-Top Electronics
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1N400x MIL-STD-202 1N400 5000/T 1N4001-TB-LF

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 °C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 , 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads , Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280
Won-Top Electronics
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CHARACTERISTICS DIODE 1N4007 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS 1N4006-T3 1N4006-TB 1N4006 1N4007-T3 1N4007-TB

diode 1N4001 specifications

Abstract: Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO , Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR
Won-Top Electronics
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Abstract: current by 20%. Symbol RMS Reverse Voltage 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 1000 V VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Won-Top Electronics
Original

LM3171

Abstract: LM317I WITH ADJUSTABLE CURRENT LIMIT AND OUTPUT VOLTAGE D6 1N 4002 Diodes D1 and D2 and transistor 02 are , voltages in excess of 25 V or high capacitance values (Co>25 jiF, Cacjj> 10 ¿xF). Diode D-1 prevents Co , APPLICATIONS FIGURE 1 BASIC CIRCUIT CONFIGURATION FIGURE 2 - VOLTAGE REGULATOR WITH PROTECTION DIODES 1N 4002 6/10 - THOMSON SEMICONDUCTORS - 370 This Material Copyrighted By Its Respective Manufacturer
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LM217 LM317I LM317ISP3 BF247 LM3171 LM317 0 to 30 volts voltage regulator LM317 0 to 12 volts voltage regulator diagram LM 317 LM series voltage regulators LM117 LM317 T0-220 LM117K
Abstract: microprocessor buses like GTL+. D1 1N 4002 (O P TIO N AL) Stability The RC1587 series require an , output capacitors provide equally good results. D1 1N 4002 (O P TIO N AL) VoUT Figure 10 , . Therefore, even with bypass capacitors on the adjust pin, no protection diode is needed to ensure device safety under shortcircuit conditions. A protection diode between the input and output pins is usu­ ally not needed. An internal diode between the input and out­ put pins on the RC1587 series can -
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RC1587-1 RC1587-3 RC1587M RC1587MC RC1587T RC1587M-1

AC125K

Abstract: 6AN7 e o f booster diode m a xim u m ca p ac ita n c e o f sm oothing filter in put ca p ac ita n c e , water-repellent layer to preclude flash-overs even at high humidity. TWIN DIODE for AM. FM demodulators and ratio , mA W = 3MÎ2 Rgi = 3 Mil R* Diode -U., =350 V = 5 mA 1. 1 . = 0.8 mA Typical Operation Pentode in RF or IF U. 1. Capacitances Pentode C - 4 pF Co = 6.5 pF C«g= 2 mpF Diode Co = 3.8 pF ^ i / C n I , mA S =1.2 mA/V H = 70 n = 58 kQ Capacitances Triode Ci =2.7 pF Co =1.7 pF C,g, =1.5 pF Diode Cu
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C

4040D 4.1

Abstract: 4040C 390! 1N 4002 D2 Q ± 2%' FB D 1*] LM4041 -ADJ R2 4 70 k N.C CM OS 3 N .C.- THRESHOLD " , to 20 mA +5V R1 3 3 2 fi +15V ± 1% R1 FB L M 4 0 4 1 -A D J 2N2905 R2 D2 1 N 4002 FB 1N , Schottky diode between pin 3 (-) and pin 1 (die attach interface connect). Pin 1 of the SOT-23 package must , 40k LM 4041 -A D J R4 2 40 k - - D1 S R3 - 1 1N 4571 5 1 0k R2 ± 5 10 k T R1 - V0 'O U T D2 1 N 457
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4040D 4.1 4040C 4040D 4041c diode schottky sot-23 LM4040/4041 LM4040 LM4041-1 LM4040-10 1N914 2N2222

BA100 diode

Abstract: BA102 DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 , 1N4006. 8TB1000 IN 4007. â'¢ BTM50 1N4001. IN 4002. BTM100 BTM200 IN 4003. . 1N4004. ' BTN400 BTM600 , 1N560 1N562 1N627 1N629 1N645 IN 647 1N649 1N661 OA74 1N662 1N926 1N1145 1N1202 1N1487 IN 1491 1N 1492 , CV7466 CV7467 CV7468 I N 220/1 0?5067 O Y 5 06 1 1N2071 1N1199 O A31 1N 17 3 1-2 37 5 1N 55 4 OA95 OA47 1N 1695 GEX34 1N341 1N1115 1N2379 1N1131 1N21E R 1N23EM R OA7 1N 813 1N 1148 AA Y12, AAZ17 1N 25 4
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BA100 diode BA102 B2M1-5 PH1021 DIODE AA116 OA210 diode A1000 AA100 AA110 AA111 AA112 AA113
Abstract: utput Voltage 06 -w 1N 4002 v out1 LM 350 32V Vin2 RSC Vini Vout 2 LM 350 'V o , (C o > 25 nF, CAdi > 10 H-F). Diode D i prevents C o from discharging thru the IC during an input short circuit. Diode D2 protects against capacitor CAdj discharging through the IC during an output -
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LM350 IN4001

pin diagram ic lm337

Abstract: Transistor LM337T diagram Vout D1 1N 4002 Figure 19. D2 PAK Therm al Resistance and Maximum Power Dissipation versus P.C.B , voltages in excess of -2 5 V or high capacitance values (C o > 25 jiF, CAdj > 10 |iF ). Diode D 1 prevents C o from discharging thru the IC during an input short circuit. Diode D 2 protects against capacitor
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LM337 pin diagram ic lm337 Transistor LM337T diagram OF IC lm337 LM337BT LM337BD2T 1N4002

Zener Diode ph 4148

Abstract: ph 4148 zener diode ANALOG by: Roc = VOVC(ref ) + Vf _ diode Half Bridge Part Setting the Oscillator of Half Bridge The , voltage of the diode (D107 in figure 1), and Ioc is the over current protection point. HR2000 Rev , maximum input voltage is recommended. A zener diode is integrated on ZCD pin. Add a resistor in 10k to , output current/power condition. Add a diode (D203 in figure 1) like 1N4148 in parallel with the sense , / 0805 AN T2 AN T1 C AT1 C AT2 L1 4. H 7m D3 1N 4007 R5 499k D4 1N 4007 C1 R6
Monolithic Power Systems
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Zener Diode ph 4148 ph 4148 zener diode ANALOG ph 4148 zener diode zener PH 4148 working of 1N 4007 DIODE SOIC16 MS-012

zener diode B3

Abstract: rd 62 nec zener ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F CHARACTERISTICS & RELIABILITY 1 , this new product Zener diode is shown in Fig. 1. As can be seen in the figure, a planar Zener diode , terminals are, when cooled to a room temperature, strongly pressed. This diode has, although it is very , Structure of DHD Type Zener Diode Document No. D11049EJ2V0AN00 (2nd edition) (Previous No. SEB , Planar Type Zener Diode Chip In RD [ ] JS Series, low noise and the sharp rise-up VZ-IZ characteristic
NEC
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zener diode B3 rd 62 nec zener zener series RD B2 Zener zener diode numbering system 2248 IR 845

SMD Transistor dj rm

Abstract: Hysteresis i l ii 1 C l iti I ; i i U l i s i i 1 s : C . 1N - °c 1(1 ti I , L i u 1 - 2 2 \ i 1 1 n n l . i 1n m . \ | s - V ( i i V IN - 5V ! , T IM , 11 + 1= 5 1 1 1 1 1 1 , to n n â t io n : c o n t in u e d S t a b i li tv C o n s id t' rat i ( in s IN 4002 (optional , . Protection diode schem e for fixed output regulators. O u t p u t V o lta g e S e n s in g Since the , and the input voltage is instanta neously shorted to ground, damage can occur. In this case, a diode
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SMD Transistor dj rm CS5203A LT1085 LTO-220

LM3171

Abstract: Transistor LM3171 necessary to add protection diodes to pre D1 1N 4002 vent the capacitors from discharging through low , * Thermal Regulation 1 10 0 I iPOVVER - 1N T \ i i s -0 .5 -1 .0 · IN " v o m = 10V · c 40 mA , need to use a protection diode. The bypass capacitor on the adjustment terminal can dis charge through
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694-3-R2K-D Transistor LM3171 lm3171 applications lm317lt 317l ic LM3171 LM317L TL/H/9084-26 TL/H/9064-27 TL/H/9064-32 LB-46 LM301A

germanium

Abstract: cqx 87 43 59 24 24 Type Page V 170 P V 194 P 25 28 1N 484 A 1N4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 1N 41480 1N 4149 1N4151 O 1N 4154 1N 4446 O 1N 4447 1N 4 4 4 8 0 1N 4449 2N918 2N 929 2N 930 2N 1613 2N 1711 2N 1893 2N 2218 2N 2218 A 2N 2219 2N , 8 8 8 8 8 8 8 8 Type Page 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N , 50 £ 85 £ 1,1 1000 - 1N 4002 5 1000 100 £ 85 £ 1,1 1000 -
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germanium cqx 87 TDA 2516 BZY87 Series BD 433NPNTO-126 BB505 AA117 AA119 BAV17 BAV18 BAV19 BAV20

IN3492

Abstract: sg 4001 diode A 125 125 0 .6 300 G 300 G NIAX VALUES 0 25 ° DIODE 1NI1B 1N 118 A 1N 126 1N , VALUES e 2 5 ° DIODE 1N 298A Vw 35 PRV If Vf 50 20 1 .5 50 Ir 5000 20 , 9 9 7 , 1N207 u T Y MAX VAI UES â'¢ 2 5 ° DIODE 1N 252 1N 253 1N 2 5 3 J a N 1n 2 5 5 , S F . 0 1 1 5 19 MAX VALUES 6 2 5 ° DIODE vâ'ž PRV I N 547 420 600 1N 547 , , 1N 1 7 3 0 , 1N 1731 1 N 6 3 .lN 4 6 3 ilN 6 9 6 tlN B 8 3 » lN 8 8 4 » lN 8 8 5 flN 8 8 6 1 N 8
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IN3492 sg 4001 diode 1NA4 diode 1n6 md914 1N20b DA200 0A202 1N34A 1N34AL PR9163 PR9163R
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