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Part Manufacturer Description Datasheet BUY
ALD114813PCL Advanced Linear Devices Inc Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled visit Digikey Buy
ALD114904SAL Advanced Linear Devices Inc Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled visit Digikey Buy
ALD114935PAL Advanced Linear Devices Inc Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 8L PDIP, EPAD Enabled visit Digikey Buy
ALD114804ASCL Advanced Linear Devices Inc Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled visit Digikey Buy
ALD114904PAL Advanced Linear Devices Inc Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled visit Digikey Buy
ALD114913SAL Advanced Linear Devices Inc Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 8L SOIC, EPAD Enabled visit Digikey Buy

depletion n channel mosfet

Catalog Datasheet MFG & Type PDF Document Tags

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , FET G 3a) NChannel FET Working in the Ohmic Region (VGS = 0 V) (Depletion Shown Only in Channel , established will form a depletion layer, where almost all the electrons present in the ntype channel will be
Temic Semiconductors
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p channel depletion mosfet

Abstract: list of n channel fet which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion , both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , substrate. 3b) N-Channel FET Working in the Ohmic Region (VGS = 0 V) (Depletion Shown Only in Channel , interchanged.) S D P N Depletion Layer P Figure 3 shows how the JFET functions. If the gate
Temic Semiconductors
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P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion , precisely-defined short channel that results and the Siliconix 10-Mar-97 N­ ÉÉÉÉÉÉÉÉ É A newer MOSFET , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , in the Ohmic Region (VGS = 0 V) (Depletion Shown Only in Channel Region) (For certain JFET , established will form a depletion layer, where almost all the electrons present in the n-type channel will
Temic Semiconductors
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P-Channel Depletion Mosfets

Abstract: shockley diode Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , complete depletion of the channel under these conditions. Depletion Layer P G 3b) N-Channel FET , the ambiguity between gate cut-off and drain pinch-off. Depletion Layer S D P N VGS , . On a MOSFET, the metallic or polysilicon gate is isolated from the channel by a thin layer of
Siliconix
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2N3797

Abstract: MPF102 equivalent transistor . 1993 GATE 1 P (a) (­) P SOURCE N DRAIN N SOURCE GATE 1 DEPLETION ZONES , voltage is increased, the depletion regions spread into the channel until they meet, creating an almost , , the depletion regions again spread into the channel because of the voltage drop in the channel which , , channel pinch-off occurs at a lower ID level (Figure 2b) because the depletion region spread caused by , SOURCE N-CHANNEL MOSFET SUBSTRATE SOURCE P P-CHANNEL MOSFET ID N MOS FIELD-EFFECT
Motorola
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AN211A

Abstract: MPF102 JFET P-CHANNEL MOSFET ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into , counterbalanced by an increase in the depletion region toward the drain. There is an effective DRAIN N , , channel pinch-off occurs at a lower ID level (Figure 2b) because the depletion region spread caused by , material, allowing the depletion region to spread mostly into the n-type channel. In most cases the gates
Motorola
Original

"RF MOSFETs"

Abstract: "vlsi technology" abstract for depletion region between the source and drain, and thereby creating a "channel". The acronym NMOS was , terminal N+ source Cdg P Body Drain-Source depletion width N Epi N+ substrate Drain terminal , depletion region will extend into the channel region reducing the actual channel length formed by diffusion , susceptible to drain to source punch-through, one would consider the depletion regions. The LDMOS channel , fundamentals of the RF MOSFET device technology and the challenges that exist to improve their RF performance
STMicroelectronics
Original

MPF102 JFET

Abstract: motorola AN211A gates connected to the N+ Figure 8. Channel Depletion Phenomenon. Application of Negative Gate , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into , counterbalanced by an increase in the depletion region toward the drain. There is an effective DRAIN N , the gates, channel pinch-off occurs at a lower ID level (Figure 2b) because the depletion region , NCHANNEL MOSFET SUBSTRATE SOURCE PCHANNEL MOSFET P ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET
Motorola
Original

"RF MOSFETs"

Abstract: "vlsi technology" abstract for depletion region between the source and drain, and thereby creating a "channel". The acronym NMOS was , terminal N+ source Cdg P Body Drain-Source depletion width N Epi N+ substrate Drain terminal , depletion region will extend into the channel region reducing the actual channel length formed by diffusion , Drain terminal N- Drain N+ Drain Drain-Source depletion width P+ Sinker P Epi P , susceptible to drain to source punch-through, one would consider the depletion regions. The LDMOS channel
STMicroelectronics
Original

MPF102 equivalent transistor

Abstract: MPF102 JFET EnhancementMode MOSFET ÍÍÍÍÍÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍÍÍÍÍÍ N+ N+ Figure 5. Channel Enhancement. Application of , -+ ±±±±±±±±±±±±± + + + N N+ N+ P (SUBSTRATE) Figure 7. Depletion Mode MOSFET , to the channel. As the drain-source voltage increases, the depletion regions again spread into the , by an increase in the depletion region toward the drain. There is an effective increase in channel , into the channel until they meet, È È È È È È N (a) (-) P P N DRAIN SOURCE ÈÇÇÈ ÇÇÇ ÇÇÇ È
ON Semiconductor
Original

all mosfet equivalent book

Abstract: free all transistor equivalent book type, and each has a n / p ­ channel type. The depletion type is normally on, and operates as a JFET , Depletion n P P V DS V DS (a) (b) Figure 2: The Structure of a Depletion Type MOSFET and , temperature of a p / n- channel power MOSFET, can be estimated with the following equation. T 2.3 R DS(on , ) is supplied VGS Gate Gate Source Source Drain N Drain N N N Channel P , , July 2000 4 3. The Structure of a MOSFET 1) Lateral Channel Design The drain, gate, and source
Fairchild Semiconductor
Original

all mosfet equivalent book

Abstract: P-Channel Depletion Mosfets ) There are depletion type and enhancement type, and each has n / p ­ channel type. The depletion type is , temperature of p / n- channel power MOSFET can be estimated with the following equation. T 2.3 R DS(on) ( T , ). Rev C, November 1999 2 Drain Drain Depletion region N N P VDS P , V DS V DS Fig. 2. The structure of depletion type MOSFET and its operation (a) When , MOSFET 1) Lateral Channel Structure All the drain, gate, and the source terminal are placed on the
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SGSP369

Abstract: between gate and P zone. C3 : Capacitance between gate and epi N. C4 : Capacitance of the channel , Depletion layer and current distribution for a POWER MOSFET in the pentode region Fig. 6b - Depletion , indicates the transition from a highly charged P zone to simple depletion of the MOSFET capacitor that , SGS-THOMSON ^ T # t m [f^ D © [^ (Ô )i[L i(§ T r ^ (Ô )R { ]D © S T E C H N IC A L N O T E STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET
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Application Notes

Abstract: matched pair JFET current flow through a controlled channel in the semiconductor material. The MOSFET creates a channel , applying a voltage to the gate. The JFET is a depletion mode device whereas the MOSFET can operate as a , this increases the channel resistance. Continuing to increase the voltage will result in the depletion , the depletion region to spread farther into the channel. This results in a corresponding increase in , the two depletion regions just touch in the middle of the channel is called the drain saturation
InterFET
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ALD114904PAL

Abstract: ALD114904SAL /ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAY VGS , voltage below which the MOSFET conduction channel rapidly turns off. For analog designs, this threshold , when the EPAD MOSFET conduction channel rapidly turns off as a function of decreasing applied gate , monolithic quad/dual depletion mode N-Channel MOSFETS matched at the factory using ALD's proven EPAD® CMOS , matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters
Advanced Linear Devices
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ALD110900

Abstract: ALD110800 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS(th)= -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel MOSFETS , threshold, or turn-on, voltage of the MOSFET is a voltage below which the MOSFET conduction channel rapidly , called the subthreshold region. This is when the EPAD MOSFET conduction channel rapidly turns off as a , . Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled
Advanced Linear Devices
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ALD110900 ALD110800 ALD114804 ALD114813 ALD114813PCL ALD114813SCL

ultra low igss pA

Abstract: ALD114804 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS(th)= -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel MOSFETs , voltage below which the MOSFET conduction channel rapidly turns off. For analog designs, this threshold , when the EPAD MOSFET conduction channel rapidly turns off as a function of decreasing applied gate , individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design
Advanced Linear Devices
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ultra low igss pA ALD114835 ALD114835PCL ALD114835SCL ALD114935 ALD114935PAL

AN-1084

Abstract: Power MOSFET Basics * Drain n* Source tox p-Substrate l Channel (a) ID 0 Although it is not possible to , - Epi Layer n- Substrate Figure 4. Power MOSFET Parasitic Components. BREAKDOWN VOLTAGE S , Layer when the depletion region on the source side of the body-drift p-n junction reaches the n , avoidance that requires longer channel lengths. The reach-through phenomenon occurs when the depletion , with the SOURCE depletion region of the body Figure 14. Equivalent Circuit of Power MOSFET Showing
International Rectifier
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AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual

HEXFET Power MOSFET designer manual

Abstract: BJT Gate Drive circuit VT VGS (b) ID D SB (Channel or Substrate) G S (c) Figure 1. Power MOSFET (a , n- Epi Layer n- Substrate Figure 4. Power MOSFET Parasitic Components. To Order Index , is observed n- Epi Layer when the depletion region on the source side of the body-drift p-n , Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca , from the design used in VLSI devices. The metal oxide semiconductor field effect transistor (MOSFET
International Rectifier
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BJT Gate Drive circuit POWER BJTs BJT characteristics P-Channel Depletion Mosfet N-Channel jfet 200V depletion Switching Power Supply Schematic Diagram using mosfet

DSS89

Abstract: : Capacitance between gate and epi N. C4 : Capacitance of the channel depletion zone. C5 : Capacitance of the , for a POWER MOSFET in the pentode region Fig. 6b - D epletion layer a n d cu rre n t distribu tio n , transition from a highly charged P zone to simple depletion of the MOSFET capacitor that exists between the , r=J SGS-THOMSON Mm TECHNICAL NOTE STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET devi ces is due especially to their ability to switch po wer
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DSS89
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