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Part Manufacturer Description Datasheet BUY
APXH006A0X4-SRZ GE Critical Power PicoTLynx™ 6A: Non-Isolated DC-DC Power Module, 2.4Vdc –5.5Vdc input; 0.6Vdc to 3.63Vdc output; 6A Output Current visit GE Critical Power
APTH020A0X3-SR GE Critical Power TLynxTM: Non-Isolated DC-DC Power Module: 2.4Vdc –5.5Vdc input; 0.6Vdc to 3.63Vdc output; 20A Output Current visit GE Critical Power
APXS006A0X4-SRZ GE Critical Power 12V PicoTLynxTM 6A: Non-Isolated DC-DC Power Module, 4.5Vdc –14Vdc input; 0.59Vdc to 5.5Vdc output; 6A Output Current visit GE Critical Power
APTS020A0X3-SRDZ GE Critical Power 12V TLynxTM 20A: Non-Isolated DC-DC Power Module, 4.5Vdc –14Vdc input; 0.69Vdc to 5.5Vdc output; 20A Output Current visit GE Critical Power
APXW003A0X43-SRZ GE Critical Power 9-36V ProLynxTM 3A: Non-Isolated DC-DC Power Module visit GE Critical Power
ATA006A0X GE Critical Power Austin MicroLynx II 12V SIP Non-isolated Power Module visit GE Critical Power

dc+adaptor+30v

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RHRP8100 RHRP15100 RHRP30100 RHRG30100 RHRG50100 RHRG75100 RHRU50100 RHRU75100 3.0V 65ns 3.0V 70ns 3.0V 75ns 3.0V 75ns 3.0V 95ns 3.0V 100ns 3.0V 95ns 3.0V 100ns 1000V RHRD6120S 3.2V 65ns RHRP890 RHRP1590 RHRP3090 RHRG3090 RHRG5090 RHRG7590 RHRU5090 RHRU7590 3.0V 65ns 3.0V 70ns 3.0V 75ns 3.0V 75ns 3.0V 95ns 3.0V 100ns 3.0V 95ns 3.0V 100ns 900V RHRD4120 RHRD4120S RHRD6120 3.2V 70ns , 3.0V 65ns 3.0V 70ns 3.0V 75ns 3.0V 75ns 3.0V 95ns 3.0V 100ns 3.0V 95ns 3.0V 100ns 800V -
OCR Scan
GM431 GM432 GM431A GM431B GM432A GM432B 24V 10A SMPS 24v 5a smps LCD TV SMPS circuit output 5.0 voltage regulator sot 223 ic regulator laptop zener 18v sot23 A-100
Abstract: RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090 3.0V 75ns RHRP3080 3.0V 75ns RHRP3070 3.0V 75ns RHRP3060 2.1V 45ns RHRP3050 , RHRG30100 3.0V 75ns RHRG3090 3.0V 75ns RHRG3080 3.0V 75ns RHRG3070 3.0V 75ns RHRG3060 Harris Semiconductor
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RHRG50120 RHRU100120 RHRU15050 RHRU15040 RHRG1550CC 100ns RHRG3040 RHRP840 RHRG30120 RHRG75120 RHRU50120 RHRU75120
Abstract: RHRG3040 2.1V 45ns RHRG3050 2.1V 45ns RHRG3060 2.1V 45ns RHRG3070 30V 75ns RHRG3080 3.0V 75ns RHRG3090 30V , 2.1V 60ns RHRU7560 2.1V 60ns RHRU7570 3.0V 100ns RHRU7580 3.0V 100ns RHRU7590 3.0V 100ns 100 A , 65ns RHRPB90 3.0V 65ns RHRP8100 3.0V 65ns RHRP1540 RHRP3040 45ns 2.1V 40ns 2.1V RHRP1 550 RHRP3050 2.1V 40ns 2.1V 45ns RHRP1560 2.1V 40ns RHRP1570 3.0V 70ns RHR P1580 3.0 V 70ns RHR P1590 3.0V 70ns RHRP3060 2.1V 45ns RHRP3070 3.0V 75ns RHRP3080 3.0V 75ns RHRP3090 3.0V 75ns RHRG7540 RHRUS040 2.1V 60ns Harris Semiconductor
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RHRG5040 RHRP4120CC RHRD440 RHRP860C RHRU10040 RHRU5040 RHRU7540 RHRG5080 RHRG5070 RHRG5060 RHRG5050 RHRG7580
Abstract: 125V AC (105) 4) LR26550 E43149 0.3A 110V DC (3×10 0.3A 110V DC (3×104) etc. 1A 30V DC (105) 1A 30V DC (105) GN (AGN) E43149 GQ (AGQ) E43149 TX E43149 TX-D E43149 TX-S , E43028 0.3A 125V AC (105) LR26550 0.3A 110V DC (3×104) etc. 1A 30V DC (105) 0.3A 125V AC (3×104) 0.3A 110V DC (3×104) 1A 30V DC (105) 0.3A 125V AC (105) 0.3A 110V DC (3×104) 1A 30V DC (105) 0.5A 125V AC (105) 0.3A 110V DC (105) 2A 30V DC (105) 0.3A 125V AC (105) 0.3A 110V DC (3×104) 1A Greegoo Electric
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Z3N-TB22 LM12-3004PA lm18-3005na PRINCIPLE OF TEMPERATURE SENSOR LM35 LM18-3008PA LM12-3004NA ISO9001 DC10-30V AC90-250V G139-3A1NA G139-3A1NB G139-3A1NC
Abstract: NEW Description Features Package P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V Low rDS(on) ID=15A; rDS(on)=0.0075â"¦ Qgd= 61nC; VGSth= -1 V; Si4425BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V VGS = ± 20V ID=-11.4A; rDS(on)=0.012â"¦ Qgd= 64nC; VGSth= -1 V; SMD SO-8 Si4431BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V VGS = ± 20V ID=-7.5A; rDS(on)=0.030â"¦ Qgd= 13nC; VGSth= -1 V; SMD SO-8 Si4435BDY P-Channel 30-V (D-S) MOSFET -
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hru150 RHRD440S RHRD450S RHRD460S RHRU7550 RHRU10050 RHRU10060
Abstract: V(BR)DSS RDS(on) @ VGS=10V ID cont. @ 25°C Package International Rectifier 30V 35 milliohms max 5.6A Micro-8 IRF7413 International Rectifier 30V 11 milliohms max 12A SO-8 Si4420DY International Rectifier 30V 9 milliohms max 12.5A SO-8 IRL3803S International Rectifier 30V 6 milliohms max 140A D2PAK RFD20N03SM Fairchild Semiconductor 30V 25 milliohms max 20A DPAK HUF76129D3S Fairchild Semiconductor 30V 16 milliohms max Panasonic
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Aromat relay lr42758 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet LR265 ISO9002 ISO9000
Abstract: POLYFUSE® RESETTABLE FUSES No. RLD30 WICKMANN Radial Leaded, 30V Specifications , 000 3.00 A / 30V 4.00 A / 30V 5.00 A / 30V 6.00 A / 30V 7.00 A / 30V 8.00 A / 30V 9.00 A / 30V 11.4 14.0 14.0 16.5 19.1 21.6 24.1 17.3 20.1 24.9 24.9 26.7 29.2 29.7 5.1 , TÜV 7.4 7.4 8.9 8.9 10.2 11.4 Marking cURus 900 mA / 30V 1.10 A / 30V 1.35 A / 30V 1.60 A / 30V 1.85 A / 30V 2.50 A / 30V 260ºC, 3 sec. (MIL-STD-202, Method 208E) · · · · · Vishay Intertechnology
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Fast Switching mosfet Si4830 B25/85T B25/85 Q-101 BZX384
Abstract: NAND128W3A2BN6E 128 Mb SLC SP 3.0V x8 TSOP48 12x20mm NAND128W3A0BN6E 128 Mb SLC SP 3.0V x8 TSOP48 (Chip Enable Care) 12x20mm NAND128W3A2BDI6 128 Mb SLC SP 3.0V x8 Known Good Die - NAND256W3A2BN6E 256 Mb SLC SP 3.0V x8 TSOP48 12x20mm NAND256W3A2BZA6E 256 Mb SLC SP 3.0V x8 VFBGA55 8x10mm NAND256W3A0BZA6E 256 Mb SLC SP 3.0V x8 VFBGA55 (Chip Enable Care) 8x10mm NAND256W3A2BD06 256 Mb SLC SP 3.0V x8 Summit Microelectronics
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HUF76143S3S MTSF3N03HD MMSF7N03HD IRF3713 IRF3713S SO8 package fairchild P-channel power mosfet SO-8 zener diode 1n5245b 4420DY RF1S70N03SM HUF76145S3S
Abstract: -5.5V to -3.0V or +3.0V to +5.5V 405ps propogation delay; 3GHz toggle frequency 8-pin SOIC SK100EL33W ÷4 divider -5.5V to -3.0V or +3.0V to +5.5V 560ps propagation delay; 4.0GHz toggle frequency; VBB output 8-pin SOIC SK100EL34WD ÷2, ÷4, ÷8 clock generation chip -5.5V to -3.0V or +3.0V to +5.5V 50ps output-to-output skew; synchronous enable/disable; master reset for synchronization 16-pin SOIC SK100EL38WD ÷2, ÷4/6 clock generation chip -5.5V to -3.0V or +3.0V to Wickmann USA
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P110U P160U P300U 208E til 312 MIL-STD-202F
Abstract: , 30V Specifications Approvals Packaging cULus Recognized: File No. E201431 TÜV: File No , 3 000 2 500 2 500 2 500 2 000 3.00 A / 30V 4.00 A / 30V 5.00 A / 30V 6.00 A / 30V 7.00 A / 30V 8.00 A / 30V 9.00 A / 30V 11.4 14.0 14.0 16.5 19.1 21.6 24.1 17.3 20.1 24.9 24.9 , / 30V 1.10 A / 30V 1.35 A / 30V 1.60 A / 30V 1.85 A / 30V 2.50 A / 30V Solderability · · · , Characteristics Rating Curve 900mA / 30V 1.10A / 30V 1.35A / 30V 1.60A / 30V 1.85A / 30V 2.50A / 30V Samsung Electronics
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NAND256W3A0BE06 NAND512W3A2DN6E NAND512W3A2DZA6E VFBGA63 NAND512R3A2DZA6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND01GW3B2CZA6E NAND256W3A2BE06
Abstract: Int. Rectifier Int. Rectifier Int. Rectifier 30V 30V 30V 100V 100V 100V 100V 35 , Intersil Intersil Intersil Intersil Intersil Intersil Intersil 30V 30V 30V 30V 30V 100V 100V , MTD20N03HDL2 MTD6N10E MTD9N10E Motorola Motorola Motorola Motorola Motorola 30V 30V 30V 100V , Si4482DY Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix 30V 30V 30V 30V 100V 28 milliohms max 14 milliohms max 28 milliohms max 18 milliohms max 60 Semtech
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SK100E016PJ SK4440ATF sk2111a SK10E445PJ SK10E131PJ SK10E116PJ F-91951 EIA-481-1A EIA-481-2A SK100ELT24W PLCC-28 TQFP-32
Abstract: â'¢C/'B Cob fT@ C CASE PNP @ Ta = 25°C min./max max. max. min. ME 3001 200mW 30V 12V 3V 20/200 ï. 10V @ 8mA 0.25V @ 10/ 1.0mA 1.6pF 600MHz @ 20mA TO-106 ME 3002 200mW â'" 30V 12V 3V 20 , @ 3mA 0.50 V @ 3/ 0.3mA 1.7pF 500MHz @ 4mA TO-72G 2N 918 200mW 50mA 30V 15V 3V 20/200 | 1 ov @ 3mA 0.40V @ 10/ 1,0mA 1.7pF 600MHz @ 4mA TO-72G 2N 3563 200mW 50mA 30V 12V 2V 20/200 a. 1 ov @ 8mA 0.10V @ 10/ 1.0mA 1.7pF 600MHz @> 8mA TO-106 2N 3564 200mW 100mA 30V 15V 4V 20/500 pi 1 ov @ 15mA 0.30V @ 20 Wickmann USA
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DEVICE MARKING CODE table FUSES RLD30P090U RLD30P110U R9956421
Abstract: MPS6566 MPS6571 MPS8097 MPS-A09 MPS-A18 MPS-A20 Type PN2218 T ransisto rs H BV Min 30V 30V 30V 30V 30V 18V 50V 45V 45V 30V 25 V 25V 50V 50V 50V 17V 45V 45V 45V 20V 40V 50V 45V 40V BV, Min 30V BV, hi , Small Signal Amplifiers Package BV. , (Fig. 1) Mm TO-92 (ECB) 30V (EBC) TO-92 (ECB) 30V (EBC) TO-92 (ECB) 30V (EBC) TO-92 (ECB) 30V (EBC) TO-9? (ECB) 30V (EBC) TO-92 18V (ECB) TO-92 80V (EBC) TO-92 60V , -92 (EBC) 30V 25V 50V 50V 70V 18V 60V 60V 20V 60V 50V 45V 40V 100nA 20V 100 400 100//A 5V 100n A 20V 100nA Summit Microelectronics
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IRF7603 IRFR110 IRFR120 IRF3710S HUF75631SK8 IRF7606 P-channel power mosfet SO-8 30V 9.2A 20 Siliconix 100v P-Channel DPAK P-CHANNEL 45A TO-247 POWER MOSFET Vishay Siliconix P-channel N-Channel power mosfet SO-8 IRFR120N
Abstract: current, even while level shifting from 3 V to 30V or vice versa. The HI-8504 finds typical application , '¢ Low to high level translaltion, from 3V to 30V â'¢ High to low level translation, from 30V to 3V â , the desired positive output level, VO+. The only restrictions on this translation are: 3.0V £ [(VO+) - (VI-)] < 30V While 3.0V s [(VI+ ) - (VI-)] < 30V The next translator stage shifts the signal to the VO-output level. The only restriction is: 3.0V s [(VO) - (VO-)] * 30V The substrate pin, VSUB -
OCR Scan
2n4121 2n5139 TO-106 2N3563 case to106 BF154 600MH 900MH 500MH 800MH 450MH 300MH
Abstract: 5A 6A 12A 3A 40A 60A 80A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V SMA D2Pak , 100BGQ030 40A 60A 80A 100A 175A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V POSSIBLE PRODUCT no current plans . see bus. mgmt. 85CNQ015 DO , 180A 200A 200A 240A 240A 300A TO-249AA Isolated TO-249AA Non-Isolated 220A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V D-60 Isolated TO-244AB Non-Isolated TO -
OCR Scan
2N4494 100ria 25V6K RN5305 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709
Abstract: N-Channel 30-V (D-S) Mosfet Features N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Package Q-Level SMD SO-8 Low Side Product Name Si4166DY Status NEW Description N-Channel 30-V (D-S) Mosfet Features N-channel 30V rDSon= 0.0039 Ohm ID=30.5 A Package Q-Level SO-8 page 5 , N-Channel 30-V (D-S) MOSFET rDS(on) = 0.0195 Ohm; Qgd=7.1nC Si4830CDY Dual N-Channel; 30-V (D-S , . mosfet plus Schottky diode; N-Channel; 30-V (D-S); rDS(on) = 0.022 Ohm; Qgd=2.5nC SMD SO -
OCR Scan
5v - 15v level shifter voltage level shifter 3V to 5V level shifter . CMOS to TTL voltage level shifter 0V to 5V UPD41264V-15V D41264V-15V HI-8504P HI-8504C HI-8504D 100KH 500KH 222-HOLT
Abstract: , consult factory for part number assignment. Electrical Specifications T A = +25°C, V DD = 3.0V, RF = , ~ 3.0V Vcont = 1.0 ~ 3.0V RF Input = -30 dBm, Vcont = 1.0 ~ 3.0V Vcont = 3.0V Vcont = 3.0V Vcont = 3.0V Vcont = 1.0 ~ 3.0V dB dB dBm dB dB dB mA Test Conditions Units Min. MD59-0049 Typ. Max , 7~5.5 3~8 12 20 20 7~13 Vcont = 1.0 ~ 3.0V Vcont = 3.0V RF Input = -30 dBm, Vcont = 3.0V Vcont = 3.0V Vcont = 3.0V Vcont = 3.0V Vcont = 1.0 ~ 3.0V dB dB dBm dB dB dB mA 19~25 2.3 -8 38 20 10 20 International Rectifier
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10BQ015 19TQ015S 40L15CTS 10BQ030 20CJQ030 180NQ045 smb 440a 100V 25A schottky 81CNQ050 60L30CT 168CMQ060 201CNQ050 D61-6SL D61-8SL 30BQ015
Abstract: -Pin SOIC Packages 3.0V to 5.5V Operating Range Low-Power Consumption 0°C to -70°C Operating Range , Conditions Notes Max Input Voltage 3.0V 5.5V 7 7 V I|N , Voltage 3.0V 5.5V 0.7 Vcc 0.7 Vcc Vcc+0.3 Vcc+0.3 1.8 2.6 V V V,L Input Low Voltage 3.0V 5.5V GND Vishay Intertechnology
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IHLP1616-01 IHLP2525CZ-01 IHLP4040DZ-01 IHLP4040DZ-11 1N4148WS-V BAT54A-V
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