SILICON NF-.' PHOTOTRANSISTOR Silicon Epitaxial Phototransistor

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

SILICON NF-.' PHOTOTRANSISTOR Silicon Epitaxial Phototransistor

Datasheet Thumbnail

Top Searches for this datasheet

103B
SILICON NF-.' PHOTOTRANSISTOR
Silicon Epitaxial Phototransistor
Acceptance Angle,
Cost
Very High Gain
Short Switching Time Good Linearity
Matches Emitters LD271, LD273, SFH484 SFH485
Package:
Clear Plastic Lens
BP103B high-sensitivity epitaxial silicon planar phototransistor. enclosed Tl^-t clear plastic package.
collector denoted "flat" case bottom.
Maximum Ratings
Operating Storage Temperature Range (T0P,
Soldering Temperature from case bottom)
Soldering Time (Ts)
Iron Soldering Time (Ts)
Collector Emitter Voltage (VCE0).35
Emitter Base Voltage (V^).7
Collector Current (lc).50
Collector Peak Current (lPK) t<10 us.100
Power Dissipation (PT0T)
Thermal Resistance (Rthja).
Characteristics Parameter
Maximum Sensitivity Wavelength
Spectral Range, Photosensitivity
Radiant Sensitive Area
Area Dimensions
Distance. Surface Case Surface
Half Angle
Capacitance
(VCE=0V,f=1 MHz, E=0) Collector Emitter Leakage Current (VCEO=35
Parameter Symbol Unit
Photocurrent, Collector-Emitter*1)
(Ee=0 mWfcm2, VCE=5 IpcE
(Ev=1000 V(x=5 IpCE
Rise/Fall Time (lc=1 Vcc=5V,RL=1kQ) Collector Emitter
Saturation Voltage Oc'IpCEmm'OS) VcEsat
Symbol Value Unit
^S/rax
1130
0.12
Deg.
'CEO
aa3b32b 000?t.ts
Powered ICminer.com Electronic-Library Service CopyRight 2003
Relative spectral sensitivity Photocurrent lPCE^f(E0),
Directional characteristic
SREL-'fa)
Dark current lCEO=1(VCE),
Photocurrent lPCE/lpCE2s-f(T,), Vce-SV
Dark current IcEc/cEtMS-'C*), Vce*25
Collector emitter capacitance
Cce-'(Vce). '"=1 MHz,
BP1036
S23b32b 0007btb
Powered ICminer.com Electronic-Library Service CopyRight 2003

SILICON NF-.' PHOTOTRANSISTOR Silicon Epitaxial Phototransistor

Top Searches for this datasheet

Other recent searches