KSR2113 0007133 EPITAXIAL SILICON TRANSISTOR Switching circu

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KSR2113 0007133 EPITAXIAL SILICON TRANSISTOR Switching circu

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SAMSUNG SEMICONDUCTOR
KSR2113
0007133 EPITAXIAL SILICON TRANSISTOR
Switching circuit, Inverter, interface circuii Driver circuit
Built bias Reslstor(R,=2.2Kn, R,=47Kn)
Complement KSR1113
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VcBO
Collector-Emitter Voltage VcEO
Emitter-Base Voltage Vebo
Collector Current -100.
Collector Dissipation
Junction Temperature
Storage Temperature Tstg -55-150
SOT-23
Emitter Collector
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Condition Unit
Collector-Base Breakdown Voltage BVcbo lc=-10(iA, lE=0
Collector-Emitter Breakdown Voltage BVceo Ic=-100jjA, lB=0
Collector Cutoff Current icbo Vcb=-40V, Ie=0 -0.1
Current Gain Vce=-5V,
Collector-Emitter Saturation Voltage Vce(sat) -0.3
Current Gain-Bandwidth Product Vce=
Output Capacitance Vcb=-10V, le=0 1.0MHz
Input Voltage Vl(off) Vce=-5V, Ic=-100^A -.0.5
Input Voltage Vi(on) -1.1
Input Resistor
Resistor Ratio R,/Ra 0.042 0.047 0.052
Equivalent Circuit
Marking
Base (Input)
Collector (Output)
"El-ET
Emitter (Gnd)
SAMSUNG SEMICONDUCTOR

KSR2113 0007133 EPITAXIAL SILICON TRANSISTOR Switching circu

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