Collector-Emitter Voltage vCEO Collector-Emitter Voltage (Rbe ohm

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Collector-Emitter Voltage vCEO Collector-Emitter Voltage (Rbe ohm

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Rating Symbol Value Unit
Collector-Emitter Voltage vCEO
Collector-Emitter Voltage (Rbe ohms) VCER
Collector-Base Voltage vCBO
Emitter-Base Voltage vEBO
Collector Current Continuous(1) mAdc
Total Device Dissipation Derate above 2.06
Total Device Dissipation Derate above Watts
Total Device Dissipation Derate above 0.68 Watt
Operating Storage Junction Temperature Range Tstg +200
2N914
JAN, AVAILABLE CASE 22-03, STYLE TO-18 (TO-206AA)
Collector
Base
Emitter
SWITCHING TRANSISTOR
SILICON
Refer 2N2368 graphs.
ELECTRICAL CHARACTERISTICS unless otherwise noted.)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) mAdc, ohms) vCER(sus)
Collector-Emitter Sustaining Voltage(2) mAdc, vCEO(sus)
Collector-Base Breakdown Voltage uAdc, v(BR)CBO
Emitter-Base Breakdown Voltage /xAdc, v(BR)EBO
Collector Cutoff Current (Vqe Vdc, 0.25 Vdc, 'CEX
Collector Cutoff Current (Vcb Vdc, (Vcb Vdc, 'CBO 0.025
Emitter Cutoff Current (Vbe Vdc- 'EBO ^Adc
CHARACTERISTICS
Current Gain(2)
mAdc, Vdc)
mAdc, Vdc'
mAdc, Vdc)
Collector-Emitter Saturation Voltage(2) vCE(sat)
mAdc, mAdc) 0.70
mAdc, thru mAdc, 0.25
Base-Emitter Saturation Voltage 0.70 0.80
mAdc, mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz)
Output Capacitance (Vcb Vdc- MHz) Cobo
Input Capacitance (Vbe Vdc, MHz) Cjbo
SWITCHING CHARACTERISTICS
Storage Time(3) mAdc)
Turn-On Time(3) mAdc, mAdc, mAdc)
Turn-Off Time(3) mAdc, mAdc, mAdc) toff
Limited Power Dissipation.
Pulse Test: Pulse Width /lis, Duty Cycle 1.0%.
Measured Sampling Scope: Pulse Width
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS

Collector-Emitter Voltage vCEO Collector-Emitter Voltage (Rbe ohm

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