Whnl HEWLETT mL'riM Packard Schottky Barrier Diodes General

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Whnl HEWLETT mL'riM Packard Schottky Barrier Diodes General

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HEWLETT-PACKARD/ CMPNTS OGQ^bSb
Whnl HEWLETT
mL'riM Packard
Schottky Barrier Diodes General Purpose Applications
1N5711,
JAN1N5711/TX/TXV 1N5712,
JAN1N5712/TX/TXV 5082-2300 Series 5082-2800 Series 5082-2900 Series
Turn-On Voltage 0.34
Pico Second Switching Speed
High Breakdown Voltage
Matched Characteristics Available
Description/ Applications
1N5711, 1N5712, 50822800/10/11 passivated Schottky barrier diodes which patented "guard ring" design achieve high breakdown voltage. Packaged cost glass package, they well suited high level detecting, mixing, switching, gating, converting, video detecting, frequency discriminating, sampling, wave shaping.
5082-2835 passivated Schottky diode cost glass package. optimized turn-on voltage. 5082-2835 particularly well suited mixing needs CATV marketplace.
5082-2300 2900 Series devices unpassivated Schottky diodes glass
package. These diodes have extremely noise ideal noise mixing, high sensitivity detecting. They particularly well suited Doppler narrow band video receivers.
Note: Series 1N5711 Series 1N5712 devices well suited applications that require high reliability JAN/TX/TXV device. devices have solder dipped leads. Both Series 1N5711 1N5712 undergo testing MIL-STD-750. More information about these devices obtained through your local Hewlett-Packard field sales engineer.
0.41 (.0161
0.36 (.014)
1.93 (.0761 1.73 (.0681
25.4 (1.001 MIN.
4.32 (.170) 3.81 (.150)
25.4 (1.00) MIN.
DIMENSIONS MILLIMETERS (INCHES).
Outline
Maximum Ratings
Junction Operating Storage Temperature Range
5082-2301, -2302, -2303,
1N5711, 1N5712,
Power Dissipation (Measured infinite heat sink TCASB 25"C) Derate linearly zero maximum rated temperature
5082-2301, -2302, -2303, -2900.100
1N5711, 1N5712, 5082-2800/10/11.250
5082-2835.150
Peak Inverse Voltage.vBK
3-64
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HEWLETT-PACKARD/ CMPNTS i+MM75fl4 OOO^bS?
Package Characteristics
Outline
Lead Material.Dumet
Lead Finish.95-5% Tin-Lead
Max. Soldering
Min. Lead Strength.4 pounds pull
Typical Package Inductance
1N5711,1N5712:.2.0
2800 Series:.2-0
2300, 2900 Series:.3.0
Typical Package Capacitance
1N5711,1N5712:.0-2
2800 Series:.0.2
2300,2900 Series:.0.07
leads Outline package should restricted that bend starts least 1/16 inch from glass body.
Outline diodes available tape reel. tape reel specification patterned after RS-296-D.
Electrical Specifications
General Purpose Diodes
Part Number Package Outline Min. Breakdown Voltage VBR(V) Max. Forward Voltage (mV) Max. Forward Current Ip(mA) Max. Reverse Leakage Current (nA) Max. Capacitance Cr(pF)
5082-2800
1N5711
5082-2810
1N5712
5082-2811
5082-2835 10**
Test Conditions 0.45 f=1.0
Note: Effective Carrier Lifetime these diodes maximum measured with Krakauer method except 5082-2835 which measured
3-65
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HEWLETT-PACKARD/ CMPNTS 44M75A4 DDDTbafl
(Flicker) Noise Diodes
Part Number 5082- Package Outline Min. Breakdown Voltage VBR(V) Max. Forward Voltage (mV) Max. Forward Current (mA) Max. Reverse Leakage Current (nA) Max. Capacitance Cr(pF)
2301
2302
2303
2900
Test Conditions f=1.0
Note: Effective Carrier Lifetime these diodes maximum measured with Krakauer method
Matched Pairs Quads
Basic Part Number 5082- Matched Pair Unconnected Matched Quad Unconnected Matched Ring Quad Encapsulated Outline Matched Bridge Quad Encapsulated Outline Batch Matched11' Test Conditions
2301 5082-2306 0.75,20
2303 5082-2308 5082-2370 5082-2396 5082-2356 0.75,
2900 5082-2912 5082-2970 5082-2997 1.0,
2800 5082-2804 5082-2805 0.5,
2811 5082-2815 5082-2814 5082-2813 5082-2826 0.1pF
2835 5082-2080
Note:
Batch matched devices have minimum batch size devices.
3-66
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HEWLETT-PACKARD/ CNPNTS
4447504
IHPA
Outline
Outline
LEAD FINISH GOLD
DIMENSIONS MILLIMETERS (INCHES).
Typical Parameters
0.10 0.20 0.30 0.40 0.50 0.60
FORWARD VOLTAGE
Figure 1.1-V Curve Showing Typical Temperature Variation 5082-2300 S0S2-2900 Series Schottky Diodes.
FORWARD CURRENT ImA]
Figure 5082-2300 Series 5082-2900 Series Typical Dynamic Resistance Forward Current (I,).
inni
Figure 2.5082-2300 Series Typical Reverse Current Reverse Voltage Various Temperatures.
REVERSE VOLTAGE
Figure 5082-2300 5082-2900 Series Typical Capacitance Reverse Voltage.
3-67
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HEWLETT-PACKARD/ CMPNTS
ODOTbBO MHPA
Topical Parameters (continued)
FORWARD VOLTAGE
Figure 5.1-V Curve Showing Typical Temperature Variation 6082-2800 1N5711 Schottky Diodes.
REVERSE VOLTAGE
Figure (6082-2800 1N6711) Typical Capacitance Reverse Voltage (Vm).
1000
REVERSE VOLTAGE
Figure (6082-2800 1N5711) Typical Variation Reverse Current CI,) Hatom Voltage (VE) Various Temperatures.
IIIIII
IIIIII
-50*
Tr/nCT
jWJ^ IOO-C
F^'M'C
FORWARD VOLTAGE
Figure 8.1-V Curve Showing Typical Temperature Variation 6082-2810 1N6712 Schottky Diode.
REVERSE VOLTAGE
Figure (6082-2810 1N6712) Typical Variation Reverse Current (J,) Reverse Voltage (VK) Various Temperatures.
IIIIII
IIIIII
w/jr^-
FORWARD VOLTAGE
Figure 10.1-V Curve Showing Typical Temperature Variation 6082-2811 Schottky Diode.
3-68
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HEWLETT-PACKARD/ CMPNTS
IHPA
Typical Parameters (continued)
REVERSE VOLTAGE
Figure (5082-2811) Typical Variation Reverse Current Reverse Voltage (VK) Various Temperatures.
f[fjr~- f//Tp~-+2S'C
rr-^iso-c
FORWARD VOLTAGE
Figure Curve Showing Typical Temperature Variations 5082-2835 Schottky Diode.
REVERSE VOLTAGE
Figure (5082-2835) Typical Variation Reverse Current (IE) Reverse Voltage Various Temperatures.
5712
5082283s
REVERSE VOLTAGE
Figure Typical Capacitance (C,) Reverse Voltage
FORWARD CURRENT
Figure Typical Dynamic Resistance Forward Current (I,).
3-69
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Whnl HEWLETT mL'riM Packard Schottky Barrier Diodes General

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