EPITAXIAL PLANAR TRANSISTOR Complementary With Type BC546/547/548
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BC556/7/8
EPITAXIAL PLANAR TRANSISTOR
Complementary With Type BC546/547/548.
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage BC556 VcBO
BC557
BC558
Collector-Emitter Voltage BC556 VcEO
BC557
BC558
Emitter-Base Voltage BC556 Vebo
BC557
BC558
Collector Current BC556 -100
BC557 -100
BC558 -100
Emitter Current BC556
BC557
BC558
Collector Power Dissipation
Junction Temperature
Storage Temperature Range Tsig -55-150
MILLIMETERS
4.70
4.80
3.70
0.45
1.00
1.27
0.B5
0.45
0.50
0.55
2.30
0.45
1.00
COLLECTOR
BASE
EMITTER
1998.
Revision
BC556/7/8
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current icbo Vcb=-30V, IE=0
BC556
Current Gain (Note) BC557 Vce=-5V, Ic=-2mA
BC558
BC556 -0.65
Collector-Emitter Saturation Voltage BC557 VcE(sat) Ic=-100mA, IB=-5mA -0.65
BC558 -0.65
BC556 -0.9 -1.1
Base-Emitter Saturation Voltage BC557 Ic=-100mA, IB=-5mA -0.9 -1.1
BC558 -0.9 -1.1
Base-Emitter Voltage Vce=-5V, Ic=-2mA -0.6 -0.75
Base-Emitter Voltage Vbe(on)2 Vce=-5V, Ic=-10mA -0.8
Transition Frequency Vce=-5V, Ic=-10mA, f=100MHz
Collector Output Capacitance Vcb=-10V, IE=0, f=lMHz
BC556 Vce=-6V, Ic=-0.1mA f=lkHz
Noise Figure BC557
BC558
NOTE According value Iife BC556, BC557, BC558 classified follows.
CLASSIFICATION none
BC556 110-450 110-220 200-450
BC557 110-800 110-220 200-450 420-800
BC558 110-800 110-220 200-450 420-800
1998.
Revision
BC556/7/8
-240 -200 -160 -120
COMMON EMITTER
IB=-0.2mA
COLLECTOR-EMITTER VOLTAGE
llFE
COMMON EMITTER
VCe=-5V_
VCE=-1V=
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
VcE(sat)
COMMON EMITTER IC/IB=10
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
COMMON EMITTER
Ta=!
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE
AMBIENT TEMPERATURE
1998.
Revision
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