BC556/7/8 EPITAXIAL PLANAR TRANSISTOR Complementary With Typ
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KOREA ELECTRONICS CO.,LTD.
BC556/7/8
EPITAXIAL PLANAR TRANSISTOR
Complementary With Type BC546/547/548.
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage BC556 VcBO
BC557
BC558
Collector-Emitter Voltage BC556 VcEO
BC557
BC558
Emitter-Base Voltage BC556 Vebo
BC557
BC558
Collector Current BC556 -100
BC557 -100
BC558 -100
Emitter Current BC556
BC557
BC558
Collector Power Dissipation
Junction Temperature
Storage Temperature Range Tstg -55-150
collector
base
emitter
TO-92
millimeters
1998.
Revision
BC556/7/8
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current icbo Vcb=-30V, IE=0
BC556
Current Gain (Note) BC557 Vce=-5V, Ic=-2mA
BC558
Collector-Emitter Saturation Voltage BC556 -0.65
BC557 VcE(sat) Ic=-100mA, IB=-5mA -0.65
BC558 -0.65
BC556 -0.9 -1.1
Base-Emitter Saturation Voltage BC557 Ic=-100mA, IB=-5mA -0.9 -1.1
BC558 -0.9 -1.1
Base-Emitter Voltage Vce=-5V, Ic=-2mA -0.6 -0.75
Base-Emitter Voltage VbE(ON2) Vce=-5V, Ic=-10mA -0.8
Transition Frequency Vce=-5V, Ic=-10mA, f=100MHz
Collector Output Capacitance Vcb=-10V, f=lMHz
BC556 Vce=-6V, Ic=-0.1mA f=lkHz
Noise Figure BC557
BC558
NOTE According value BC556, BC557, BC558 classified follows.
CLASSIFICATION none
BC556 110-450 110-220 200-450
BC557 110-800 110-220 200-450 420-800
BC558 110-800 110-220 200-450 420-800
1998.
Revision
BC556/7/8
llFE
-240 -200 -160 -120
COMMON EMITTER Ta=25*C
-1.0
-u.o
lB=-0.2mA
COLLECTOR-EMITTER VOLTAGE
COMMON EMITTERl
Ta=100*C Vce=-5V
Ta=25*C
1(1!
=-lvq
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
VcE(sat)
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
COMMON EMITTER
"CE: Ta=J
-0.1 -0.3 -100 -300 COLLECTOR CURRENT (mA)
-300 -100
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE
AMBIENT TEMPERATURE (*C)
1998.
Revision
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