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BC337A BC338 PHILIPS INTERNATIONAL SILICON PLANAR EPITA


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BC337
BC337A
BC338
PHILIPS INTERNATIONAL
SILICON PLANAR EPITAXIAL TRANSISTORS
7iiDfi2b Gom^aa HPHIN
N-P-N transistors plastic TO-92 envelopes, primarily intended driver output stages audio amplifiers.
BC337, BC337A, BC338 complementary BC327, BC327A BC328 respectively. QUICK REFERENCE DATA
BC337 BC337A BC338
Collector-emitter voltage (Vbe VCES max.
Collector-emitter voltage (open base) VCEO max.
Collector current (peak value) max. 1000
Total power dissipation Tamjj Ptot max.
Junction temperature max.
Transition frequency
lc=10mA; typ.
D.C. current gain
IC=100mA;VcE=1
MECHANICAL DATA
Fig. TO-92.
Pinning
emitter
base
collector
Dimensions
Meant
-4.2 max-
0.40
2,54 -j-8-2
max-
12.7
0.49
within uncontrolled
Capability approved CECC NECC-C-002
June 1992
11BC337 BC337A BC338 philips international
RATINGS
Lirpiting values accordance with Absolute Maximum System (IEC 134)
RHIN
Collector-emitter voltage Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (d.c.) Base current (peak value)
Total power dissipation Tamb
Tamb Storage temperature Junction temperature
THERMAL RESISTANCE From junction ambient free From junction ambient
BC337
BC338
0,156
K/mW K/mW*
Transistor mounted printed circuit board, max. lead length mounting collector lead min. 10mmx
June 1992
Silicon planar epitaxial transistors
BC337 BC337A
PHILIPS INTERNATIONAL
CHARACTERISTICS
unless otherwise specified
Collector cut-off current 0;VCB 20V;Tj V;Tj Emitter cut-off current
0;Veb Base-emittervoltage*
Saturation voltage
D.C. current gain VCeb1V
BC337; BC338
BC337A
BC337-16 BC338-16 BC337-25 BC338-25
BC337-40 BC338-40
Transition frequency
Collector capacitance
711002b DDMmO
'CBO
fCBO
>EBO
vCEsat
PHIN
typ. typ.
decreases about mV/K with increasing temperature.
June 1992
BC337 BC337A BC338
PHILIPS INTERNATIONAL
711052b oamw
7267IU2
T-29-23
Fig.
Fig.
tp(s)
June 1992

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