File Number 2309 IRF540, IRF541, IRF542, IRF543 Power Field-Effec

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File Number 2309 IRF540, IRF541, IRF542, IRF543 Power Field-Effec

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-Standard Power MOSFETs
File Number 2309 IRF540, IRF541, IRF542, IRF543
Power Field-Effect Transistors
N-Channel Enhancement-Mode Power Field-Effect Transistors
i*DS(on) 0.085 0.11
power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics High input impedance Majority carrier device
TERMINAL DIAGRAM
IRF540, IRF541, IRF542, IRF543 n-channel enhancement-mode silicon-gate power field-effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high-power bipolar switching transistors requiring high speed gate-drive power. These types operated directly from integrated circuits.
IRF-types supplied JEDEC TO-220AB plastic package.
JEDEC TO-22QAB
Absolute Maximum Ratings
Parameter IRF540 IRF541 IRF542 IRF543 Units
Drain Source Voltage
Vqqr Drain Gate Voltage IRqS
I0@TC Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Max. Power Dissipation (See Fig.
Linear Derating Factor ISeeFig.
Inductive Current, Clamped ISee Fig. Band lOOpH
Operating Junction Tstg Storage Tempereture Range
Lead Temperature <0.063 (1.6mm) from case 10s)
N-CHANNEL ENHANCEMENT MODE
TERMINAL DESIGNATION
3-149
Standard Power MOSFETs
IRF540, IRF541, IRF542, IRF543
Electrical Characteristics (Unless Otherwise Specified)
Parameter Type Min. Typ. Max. Units Test Conditions
BVqss Drain Source Breakdown Voltage IRF540 IRF542 V,3S 250/iA
IRF541 IRF543
^GSlth) Gate Threshold Voltage VGS- 250(AA
'GSS Gate-Source Leakage Forward
'GSS Gate-Source Leakage Reverse -500 -20V
IpSS Zero Gate Voltage Drain Current Max. Rating,
1000 Max. Rating 0.8,
'D(on) On-State Drain Current IRF540 IRF541 'D(on) "DSIonl max.'
IRF542 IRF543
RQS(on) Static Drain-Source On-State Resistance IRF540 IRF541 0.07 0.086 10V.
IRF542 IRF543 0.09 0.11
Forward Trensconductance stai 'D(on) RDSIon) max.'
Cjss Input Capacitance 1276 V'GS 25V- Fig.
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time 30V, 15A, 4.711 Siee Fig. (MOSFET switching times essentially independent operating temperature.)
Rise Time
td(off) Turn-Off Delay Time
Fail Time
Total Gate Charge (Gate-Source Plus Gate-Drain) 10V' 34A' Ma*' R",ins-Siee Fig. test circuit. (Gate charge essentially independent operating temperature:.)
Gate-Source Charge
Gate-Drain ("Miller") Charge
Internal Drain Inductance Measured from contact screw center die. Modified MOSFET symbol showing internal device inductances.
Measured from drain lead, (0.25 in.) from package center die.
Internal Source Inductance Measured from source lead, (0.25 in.) from package source bonding pad.
Thermal Resistance
^thJC Junction-to-Case
RthCS Case-to-Sink Mounting surface flat, smooth, greased.
"thJA "C/W Free Operation
Source-Drain Diode Ratings Characteristics
Continuous Source Current (Body Diode) IRF540 IRF541 Modified MOSFET symbol showing integral reverse junction rectifier.
IRF542 IRF543
Pulse Source Current (Body Diode) IRF640 IRF541
IRF542 IRF543
Diode Forward Voltage IRF540 IRF541 27A,VGS
IRF542 IRF543 24A,
Reverse Recovery Time 27A, dlp/dt lOOA/iis
Qftft Reverse Recovered Charge dlp/dt
Forward Turn-on Time Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Pulse Tost: Pulse width 300|is, Duty Cycle <2%. Repetitive Rating: Pulse width limited
max. junction temperature. Transient Thermal Impedance Curve (Fig.
_3-150
Standard Power MOSFETs
IRF540, IRF541, IRF542, IRF543
-Will PULSE vDS:>,D(o
J-5S
VGS. GATETO-SOURCE VOLTAGE (VOLTS)
Fig. Typical Transfer Characteristics
VDS, DRAIN SOURCE VOLTAGE (VOLTSI
Fig. Maximum Safe Operating Area
iovl
JS-8
VQS. DRAIN-TO-SOURCE VOLTAGE IVOLTS)
Fig. Typical Output Characteristics
PUL: ETES"
-vgs
VDS. 0RAIN-TO SOURCE VOLTAGE IVOLTS)
Fig. Typical Saturation Characteristics
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse Duration
_3-151
Standard Power MOSFETs
IRF540, IRF541, IRF542, IRF543
-1-1- -550C
-125
'D(on) f>DS(
DRAIN CURRENT (AMPERES)
Fig. Typical Transconductance Drain Current 1.26
JUNCTION TEMPERATURE ("CI
Fig. Breakdown Voltage Temperature
Vos, DRAIN SOURCE VOLTAGE (VOLTS]
Fig. Typical Capacitance Orain-to-Source Voltage
Vsd.SOURCE DRAIN VOLTAGE (VOLTS)
Fig. Typical Source-Drain Diode Forward Voltage
JUNCTION TEMPERATURE
Fig. Normalized On-Resistance Temperature
VDS=30V
vDs- 840.542
)-34A
TEST CIRCU FIGURE
TOTAL GATE CHARGE (nC)
Fig. Typical Gate Charge Gate-to-Source Voltage
_3-152

File Number 2309 IRF540, IRF541, IRF542, IRF543 Power Field-Effec

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