Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continu

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Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continu

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SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE
Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW)
Min. Max. lc(mA) Max. lc(mAI Ig(mA)
2N3903
2N3904 iHHj
2N3905 hhmi
2N3906 SjjMjfj
2N4123
2N4124
2N4125 KHBH
2N4126
2N4400
2N4401
2N4402
2N4403
2N4409
2N4410 iiib
N5088 HHI|
2N5089 1200
2N5219 HHBgj
2N5220
2N5221
2N5223
2N5225 BIBBI
2N5226
2N5227
GES929 .125 MBBi
GES930 .125
GES2221
GES2221A
GES2222 BMBI
GES2222A
GES2483 .125
GES2906
GES2907
GES5305 jjj|jB
GES5306
GES5307 HflM
GES5308
GES5368
GES5369
GES5370
GES5371 150.
GES5372
GES5373
GES5374
Silicon
Transistor
General Electric 2N5226 Silicon Planar Epitaxial Passivateci Transistor designed general purpose amplifier applications. Polarities Negative: Observe Proper Bias.
absolute maximum ratings: unless otherwise specified)
Voltages
Collector Emitter Vceo Volts
Collector Base Volts
Emitter Base VEBO Volts
Current
Collector
Dissipation
Total Power
Derating Factor
Total Power Watt
Derating Factor
Temperature
Operating +150
Storage Ts,g
Lead (1/16" 1/32" from +230
case sec.)
TO-92
1.EMITTER
BASE
COLLECTOR
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
.205
2.41 2.67
1.39 .045
3.430 4.32
12.700
1.270
2.920
NOTES:
THREE LEADS
2.CONTOUR PACKAGE UNCONTROLLED OUTSIDE THIS SIDE.
3.(THREE LEADS) ,6b2 APPLIES BETWEEN
APPLIES BETWEEN I2.70MM (.500") FROM SEATING PLANE. DIAMETER UNCONTROLLED BEYOND 12.70 (.500") FROM SEATING PLANE.
*electrical characteristics: unless otherwise specified)
Static Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
=-100 Collector Cutoff Current (VCB 15V, Emitter Cutoff Current (Vbe 4.0V, Current Gain
10V) 10V) Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Dynamic Characteristics
Current-Gain Bandwidth Product
10V, MHz) Collector-Base Capacitance
(VCB 5.0V, MHz) Small Signal Current Gain
10V, kHz)
Pulse Test: Pulse width duty cycle
SYMBOL
tV(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Iebo
thFE thFE
tVCE(sat)
tVBE(sat)
MIN.
MAX.
UNITS
Volts
Volts
Volts
Volts Volts
1800
*Indicates JEDEC Registered Data.
SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS
TO-92 PACKAGE
Device
BVCEO (sat) Type Min. Max. IC(mA) Max. IC(mA) IB(mA) (MHz)
Ccb@ Continuous Typical (mA)
25°C (mW)
2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4402 2N4403 2N4409 2N4410 2N5088 2N5089 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374
Silicon
Transistor
General Electric 2N5226 Silicon Planar Epitaxial Passivated Transistor designed general purpose amplifier applications. Polarities Negative: Observe Proper Bias.
-IAeI.
2N5226
J:.==>
-rrt-m-ch
-'-1
absolute maximum ratings: 25°C unless otherwise specified)
Voltages Collector Emitter Collector Base Emitter Base Current Collector Dissipation Total Power ,;;;; 25°C Derating Factor 25°C Total Power 25°C Derating Factor 25°C Temperature Operating Storage Lead (1/16/1 1/32/1 from case sec.)
!+-L-2-~
SEATING PLANE -TO-92
_-.l.J.
-?2-.:t"T
VCEO VCBO
Volts Volts Volts MWtC Watt mWtC
EMITTER 2.BASE COLL.ECTOR
SYMBOL
'/>b2
.'tD
MILLIMETERSiNCHES NarES MIN. MAX. MIN. MAX. 4.320 5.330 .170 .210 .407 .550 .022 .407 .482 .016 .019 5.200 .175 .205 3.180 4.190 .125 .165 2.410 2.670 .095 .105 1.395 .045 .055 3.430 4.320 .170 12.700 .500 1.270 .050 6.350 .250 2.920 2.030 2.670 .080
+150 -55to+150 Tstg +230
NOTES: THREE LEADS 2.CONTOUR Pt,CKAGE UNCONTROLLED OUTSIDE THIS SIDE. 3.(THREE LEADS) 16b2 APPLIES BETWEEN <l>b APPLIES ElETWEEN 12:.70MM (.500") FROM SEATING PLANE. DIAMETER UNCONTROLLED BEYOND 12.70 (,500") FROM SEATING PLANE.
*electrical characteristics: 25°C unless otherwise specified) Static Characteristics SYMBOL Collector-Emitter Breakdown Voltage rnA, tV(BR)CEO Collector-Base Breakdown Voltage 1001lA, V(BR)CBO Breakdown Voltage V(BR)EBO Collector Cutoff Current (VCB 15V, ICBO Emitter Cutoff Current (VBE 4.0V, lEBO Curren Gain rnA, lOV) thFE rnA, lOV) thFE Collector-Emitter Saturation Voltage rnA, rnA) tVCE(sat) Base-Emitter Saturation Voltage rnA, lOrnA) tVBE(sat) Dynamic Characteristics Current-Gain Bandwidth Product rnA, lOV, MHz) Collector-Base Capacitance (VCB 5.0V, MHz) Small Signal Current Gain rnA, lOV, kHz)
tPulse Test: Pulse width J.lS, duty cycle
MIN.
MAX.
UNITS
Volts Volts Volts
Volts Volts
1800
*Indicates JEDEC Registered Data.

Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continu

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