TRANSISTORS SILICIUM, MESA DIFFUSES 2815 2816 *2I\I 2817 *2I\I 28

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TRANSISTORS SILICIUM, MESA DIFFUSES 2815 2816 2I\I 2817 2I\I 28

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SILICON TRANSISTORS, DIFFUSED MESA
TRANSISTORS SILICIUM, MESA DIFFUSES
2815 2816 *2I\I 2817 *2I\I 2818
large signal amplification
Amplification grands signaux
High current switching
Commutation fort courant
Preferred device Dispositif
2815
2816
2817
2818
Ptot
(j-c) max.
h21E 10-50
Dissipation derating
Variation dissipation
Case jn.63 out,'ne drawing CB-70 last pages Voir dessin CB-70 pages
Weight 23,5
Masse
view dessus
Collector connected case collecteur
ABSOLUTE RATINGS (LIMITING VALUES)
VALEURS LIMITES ABSOLUES D'UTILISATION
(Unless otherwise stated) (Sauf indications contraires)
2815 2816 2817 2818
Collector-base voltage Tension collecteur-base VCBO
Collector-emitter voltage Tension VCEO
Emitter-base voltage Tension VEBO
Collector current Courant collecteur
Base current Courant base
Power dissipation Dissipation puissence <case Ptot
Junction temperature
Storage temperature stockage "stg +200 +200 +200 +200
73-11
THOMSON
2815, 2816, 2817, 2818
STATIC CHARACTERISTICS ycor- (Unless otherwise stated)
CARACTERISTIQUES STATIQUES case (Saufindications contraires!
Test conditions Conditions mesure Min. Typ. Max.
Collector-emitter cut-off current Courant VBE=-1,5V 'CEX 2815
'case
=100V VBE=-1,5V 2816
Vbe=-1,5V 'case
Vbe=-1,5V 2817
=150 =-1,5
Vbe=_1,5V 2818
Vbe=-1,5V
Emitter-base cut-off current Courant 'ebo 0,25
Collector-emitter breakdown voltage Tension claquage V(BR)CEO 2815
2816
2817
2818
300/is
Impulsions
2815, 2816, 2817, 2818
STATIC CHARACTERISTICS (Unless otherwise stated)
CARACTERISTIQUES STATIQUES 0856 tSauf indications contraires!
Test conditions Conditions mesure Min. Typ. Max.
Static forward current transfer ratio Valeur statique rapport transfert direct courant VCE;=3V
Collector-emitter saturation voltage Tension saturation =1,5 CEsat
Base-emitter saturation voltage Tension saturation =1,5 BEsat
DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pourpetits signaux)
Transition frequency transition VCE=3V
Turn-on time Temps total =1,5
Fall time Temps =1.5 =-1,5
Carrier storage time Retard =1,5 =-1,5
THERMAL CHARACTERISTICS CARACTERISTIQUES THERMIQUES
Junction-case thermal resistance thermique Rth(j-c)
Pulsed
Impulsions
SILICON TRANSISTORS, DIFFUSED MESA
TRANSISTORS SILICIUM, MESA DIFFUSES
2815 2816 2817 2818
Dispositif recommande
-.-.-,-* Preferred device
large signal amplification
Amplification grands signaux
High current switching
Commutation fort courant
100V 150V 200W (j-c) h21E
2815 2816 2817 2818
1°C/W
max_
Dissipation derating
Variation dissipation
BOitler
outline drawing CB-70 la!;t pages
Voir dess;n cote C8-70 dern;,jres pages
Weight 23,5
(OC)
Collector connected case
cas.
Masse
collecteur relie bo;tier
ABSOLUTE RATINGS (LIMITING VALUES)
LEURS LlMITES ABSOLUES D'UTILISATION
(Unless otherwisE' stated)
(Sauf indicat;onscontraires)
21\1 2815
Collector- base voltage
Tension colIBcteur-base
2816
+200
2817
2818
+200
VCBO VCEO
Collector-e mitter voltage
Tension collectflur-4mettfJur
Emitter-ba voltage
Tension emetteur-bBse
Collector current
Courant colleereur
Base curre
Courant base
Power diss ipation
Dissipation puissance
tcase
25°C
Ptot
+200
f200
Junction perature
TemperBture jonction
Storage mperature
TemperBtuffl
stockage
2815, 2816, 2817, 2818
STATIC CHARACTERISTICS
CARACTERlsnaUES naUES
tease 25"C
Test conditions
Conditions mesure
(Unless otherwise stated)
(Sauf indications contrairesJ
Min. Typ. Ma,.
=80V =-1,5V -1,5 tease 150°C 100V -1,5 =-1,5V 2816 2815
tease 150°C
Colle ctor-emitter cut-off current
Coura rtJs;duel collecteuf-emetteur
r-VCE -1,5 -1,5 tease 150°C =200 -1,5 =-1,5V
'CEX 2817
2818
tease 150°C
=10V
Emit ter-base cut-off current
Coura residuel emetteur-basll
'EBO
0,25
2815
2816
Colle ctor-emitter breakdown vOltage
Tension c!aqulIge collecteur-emetteur
V(BR)CEO
2817
-~-'
2818
Pulsed
,;;;
Impulsions
2815, 2816, 2817, 2818
STATIC CHARACTERISTICS
CARACTERIST/OUES T/OUES
tease
25°C
(Unless otherwis,::! stated)
(Sauf mdications contralfes)
Test conditions
CondItions mesure
Min. Typ. Max.
Static forward current transfer ratio
Valeur statique rapport transfert
direct courant
h21E
-_._-+-Collector-emitter saturation voltage Tension saturation collecteur-emetteur
VeEsat
Base-emitter saturation voltage
Tension saturation base-emetteur
DYNAMIC CHARACTERISTICS (for small signals)
CARACTERIST/OUES DYNAMIOUES (pour petits signaux)
Transition frequency
Frequence transition
Turn-on time
Temps total d'IJtablissement
Fall time
Temps
d/~croissance
-1,5
Carrier storage time
Retard decroissance
-1,5
THERMAL CHARACTERISTICS
CARACTERIST/OUES THERMIOUES
Junction-case thermal resistance
Resistance thermique (jonction-boitier)
R_th_l_j-C_)_
'e/w
Pulsed
Impulsions