MCR120 PLASTIC THYRISTORS Annular PNPN devices designed high
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MCR115 (SILICON)
MCR120
PLASTIC THYRISTORS
Annular PNPN devices designed high volume consumer applications such relay lamp drivers, small motor controls, gate drivers larger thyristors, sensing detection circuits. Supplied inexpensive plastic TO-92 package which readily adaptable automatic insertion equipment.
Sensitive Gate Trigger Current Maximum
Reverse Forward Blocking Current
Maximum,
Holding Current Maximum
Passivated Surface Reliability Uniformity
PLASTIC SILICON CONTROLLED RECTIFIERS
AMPERE VOLTS
MAXIMUM RATINGS'11
Rating Symbol Valun Unit
Peak Reverse Blocking Voltage MCR115 MCR120 VRRM Volts
Forward Current (See Figures (All Conduction Angles) 't(rms)
Peek Forward Surge Current, cycle. Sine Wave, 'tsm
Circuit Fusing Considerations. 0.1B
Peak Gate Power Forward, 25"C 0.11 Watt
Average Gate Power Forward, PGF(AV) 0.01 Watt
Peek Gate Current Forward, 25"C (300 PPS) *GFM
Peak Gate Voltage Reverse VGRM Volts
Operating Junction Temperature Range Rated VRRM V0RM to+110
Storage Temperature Range Tstg to+150
Lead Solder Temperature (<1/16" from case, max)
Temperature reference point tarn paratura* cantar flat portion packaga. unless otharwiaa noted.)
SEATING PLANE
STYLE
CATHODE
GATE
ANODE
MILLIMETERS INCHES
4.450 0.175 0.205
4.190 0.126
4.320 5.330 0.170 0.210
0.407 0.533 0.016 0.021
0.482 0.016 0.019
12.700 0.500
1.150 1.390 0.045 0.055
1.270 0.050
6.350 0.250
3.430 0.135
2.410 2.670 0.095 0.105
2.030 2.670 0.080 0.105
CASE 29-02 TO-92
MCR115, MCR120 (continued)
ELECTRICAL CHARACTERISTICS (RGK 1000 Ohms)
Characteristic Symbol Unit
Peak Forward Blocking Voltage (Note MCR115 MCR120 VDRM Volts
Peak Forward Blocking Current (Rated VDRM (drm
Peak Reverse Blocking Current (Rated VrrM Irrm
Forward "On" Voltage (Note peak@TA Volts
Gate Trigger Current (Continuous (Note (Anode Voltage Vdc, Ohms)
Gate Trigger Voltage (Continuous (Anode Voltage Vdc, Ohms) (Anode Voltage Rated Vqrm, 100Ohms) Volts
Holding Current (Anode Voltage Vdc, initiating current
Thermal Resistance, Junction Case
Thermal Resistance, Junction Ambient
VDRM VRRM types applied continuous basis without incurring damage. Ratings appty zero negative gate voltage positive gate voltage shall applied concurrently with negative potential anode. When checking forward reverse blocking capability, thyris-tor devices should tested with constant current source
manner that voltBge applied exceeds rated blocking voltage.
Forward current applied maximum duration, duty cycle 1.0%.
current included measurement.
FIGURE CURRENT DERATING (REFERENCE: CASE TEMPERATURE!
FIGURE CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE)
lF(AV). AVERAGE FORWARD CURRENT (AMP)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
(SILICON) MCR120
PLASTIC THYRISTORS
Annular PNPN devices designed high volume cC)nsumer applications such relay lamp drivers, small motor controls, gate drivers hirger thyristors, sensing detection circuits. Supplied inexpensive plastic package which readily adaptable automatic insertion equipment. Sensitive Gate Trigger Current Maximum Reverse Forward Blocking Current Maximum, ll00C Holding Current Maximum Passivated Surface Reliability Uniformity
PLASTIC SILICON CONTROLLED RECTIFIERS
AMPERE
VOLTS
MAXIMUM RATINGS(1)
lIMing Peak Reverse Blocking Voltage MCR115 MCR120 Forward "urrent 11M:; ISee Figures (All Conduction Anglesl Peek Forw.d Surge Current, 25°C (112 cycl., Sine WfNe, Circuit Fusing Consideratjons. Symbol Volu 151)
VRRM
Unit Volts
SEATING.!! PLANE
IT(RMSI ITSM PGF(AVI IGFM VGRM
Watt Watt Volts
STYLE CATHODE GATE ANODE
0.11 0.01
Peek Gate Power Forward.
Average Gate Power
Forward,
Gate Curront Forward, (300,.I,I20PPSI Peak Gate Voltage Reveno
1.()
5.()
Operating Junction Temperature Range Rated VRRMendVDRM Storage Tamperature Range
Leed Solder Temper"",ro from COlO, maxI
'150
+2,10
MILLIMETERS INCHES 4.450 5.200 0.175 0.205 U.15~ 4.1su U.IZ~ 4.320 5.330 0.170 0.210 0.407 0.533 0.016 0.021 U.OUI U.Ulti U.UIS .700 0.500 1.150 1.390 0.045 0.055 1.270 0.050 6.350 0.250 3.430 0.135 2.410 2.670 0.095 0.105 2.030 2.670 0.080 0.105
Temper.ture r.t.rence point for.1I temperatur. center tl81: 1)C,nlon
PKkege. +110 otherwl. noted.)
CASE 29'()2
MCR115, MCR120 (continued)
ELECTRICAL CHARACTERISTICS (RGK 1000 Ohms)
Characteristic
Peak Forward Blocking Voltage (Note (TC= 110°C) MCR115 MCR120 IORM IRRM VTC' 25°C TC'250 -65°C 1100C -650
Symbol VORM
Unit
Volts
Peak Forward Blocking Current (Rated VORM 110°C)
Peak Reverse Blocking Current
(Rated VRRM 110°C) Forward "On" Voltage (Note peak@TA 25°C)
Gate Trigger Current (Continuous (Note (Anode Voltage Vdc, Ohms) Gate Trigger Voltage (Continuous (Anode Voltage Vdc, Ohms) (Anode VOltage Rated VORM, Ohms) Holding Current (Anode Voltage Vdc, initiating current rnA)
Volts
8JC'
Volts
°C/W °CIW
Thermal Resistance, Junction Case
Thermal Resistance, Junction Ambient
VORM VRRM types applied acontinuouis
basis without incurring damage. Ratings apply zero negative gate voltage positive gate voltage shall applied concurrently with negative potential anodE',
When check forward reverse block capability, thyril'tor devices should tested with constant current source
manner that voltage appiied exceeds rated blocking voltage.
FClrward currant applied m21ximum duration, duty cycl. 1.0%.
RGI( current included measurt)ment.
FIGURE CURRENT DERATING (REFERENCE: CASE TEMPERATURE)
FIGURE CURRENT I)ERATING IREFERENCE: AMBIENT TE:MPERATURE)
t-.,- 1-,." ""-,,",, .::: -300
CA:EN~!SUREMENT
-FLITPORTrN
POINT CENTER
CONOUCTION"~
"'~1""- -.::
-""""',1.BO.
IF(AV), AVERAGE FORWARD CURRENT lAMP)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
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