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J-5- 9-U'CtO* 92CS-19I4I FUNCTIONAL DIAGRAM 430E57
Top Searches for this datasheetHARRIS SEflICOND SECTOR J-5- 9-U'CtO* 92CS-19I4I FUNCTIONAL DIAGRAM 430E571 GG37b70 BHAS T-Hb-CTt-d CD4572U3 Types CMOS Gate Four Inverters, 2-lnput Gate, 2-lnput NAND Gate P'S-H Features: input positioned adjacent easy gate inverter NAND input positioned adjacent easy gate inverter Standard symmetrical output characteristics 100% tested quiescent current Maximum input current over full package-temperature range: VandiS'C 5-V, 10-V, 15-V parametric ratings Meets requirements JEDEC Standard 13B, "Standard Specifications Description Series CMOS Devices" CD4572UB Gate provides system designer with direct implementation inverter, NAND, functions supplements existing family CMOS gates. CD4572UB devices meet requirements JEDEC Standard 13B, "Standard Specifications Description Series CMOS Devices," INPUTS PROTECTEO CMOS PROTECTION NETWORK CD4572UB types supplied 16-lead dual-In-line ceramic packages suffixes), 16-lead dual-in-line plastic package suffix), chip form suffix). TERMINAL ASSIGNMENT Fig. Schematic diagram lour identical inverters. Fig. Schematic diagram 2-input gate. 92CS-39I49 Fig. Schematic diagram 2-input NAND gate. 3-351 HARRIS SEMCON]) SECTOR M3GB271 0037b71 CD4572UB Types Ol'll MAXIMUM RATINGS, Absolute-Maximum Values: SUPPLY-VOLTAGE RANGE, (VDD) Voltages referenced Terminal) -0.5Vto +20V INPUT VOLTAGE RANGE, INPUTS .".-.'. !.,.;.,. .-0.5V +0.5V INPUT CURRENT, INPUT POWER DISSIPATION PACKAGE (PQ); -550C f.:.'.".500mW Linearity 200mW DEVICE DISSIPATION OUTPUT TRANSISTOR full package-temperature range (All PackageTypes). 100mw OPERATING-TEMPERATURE RANGE fTf). STORAGE TEMPERATURE RANGE (Tstg) LEAD TEMPERATURE (DURING SOLDERING): distance 1/16 1/32 Inch (1.59 0.79mm) from case ._:. +2650C RECOMMENDED OPERATING CONDITIONS maximum reliability, nominal operating conditions should selected that operation always within following ranges: CHARACTERISTIC LIMITS UNITS Min. Max. Supply-Voltage Range (ForTA=Full Package-Temperature Range) STATIC ELECTRICAL CHARACTERISTICS CHARACTERISTIC CONDITIONS UNITS LIMITS INDICATED TEMPERATURES (OC) +125 Min. Typ. Max. Quiescent Device Current, Max. 0.25 0.25 0.01 0.25 0.01 0.01 0.02: Output (Sink) Current' Min. 0.64 0.61 0.42 0.36 0.51 6.8. Output High (Source) Current, Mln, -0.64 -0,61- -0.42 -0.36 -0.51 -1.8 -1.3 -1.15 -1.6 -3.2 -1.6 -1:5 -1.1 -0.9 -1.3 -2.6 13.5 -4.2 -2.8 -2.4 -3.4 -6.8 Output Voltage:" Low-Level, Max. 0.05 0.05 0.05 0.05- 0.05 0.05 Output Voltage:. High-Level, Min. 4.95 4.95 9,95 9.95 14.95 14.95 Input Voltage, Max, 0.5, 1.5, 13.5 Input High Voltage, Min, 0.5; 1.5, 13.5 12.5 12.5 Input Current, Max. 3-352 HARRIS SEMICOND SECTOR 0037fa75 CD4572UB Types DYNAMIC ELECTRICAL CHARACTERISTICS Input tr,tf=20 Cl=50 CHARACTERISTIC SYMBOL TEST CONDITIONS LIMITS UNITS VDD(V) Min. Typ. Max. Propagation Delay Time tpHL. tpLH Transition Time Input Capacitance Input DRAIN1-TO-SOURCE VOLTAGE Fig, Typical output characteristics. VDL.TAGE Fig. Typical output characteristics. 12.5 INPUT VOLTAGE Fig. Minimum maximum inverter voltage transfer characteristics. DRAW-TO-SOURCE VOLTAGE CVDSJ~-V 92CS 'Z43I9RI Fig. Minimum output (stnk) current characteristics. Fig. Minimum output high (source) current characteristics. 12.9 17.5 WPVT VOLTAGE (ViI Fig. Typical inverter voltage transfer characteristics function temperature. 3-353 HARRIS SEMICOM SECTOR 4302571 0037b73 -r-Hb-oi-" CD4572UB Types 12.5 INPUT VOLTAGE (Vjl-V Fig. Typical Inverter current voltage transfer characteristics. LOAD CAPACITANCE Fig. Typical transition time load capacitance. IEN1 4PER POWER DISSIPATION 1NVEB LOAD CAPACITANCE FIXTURE* 39pFEXT) CL-l3pFtllpF FIXTURE* 4pFEXT.) a.Ll 8,^4 input frequency 92CS-36682 Fig. Typical dynamic power dissipation frequency. inputsr LOAD CAPACITANCE (CLJ-pF 92CS-29929 Fig. Typical propagation delay time function load capacitance. SUPPLY VOLTAGE (VDD)-V 92CS-39I4S Fig. Typical propagation delay time supply voltage. Fig. SUPPLY VOLTAGE (Vdo' 92CS-25II4HI Variation normalized propagation delay time-" (fpHL fpLH) with supply voltage. 9K3-27427BI Fig. Quiescent device current test circuit. Fig. Noise immunity test circuit. 3-354 92CS*27429 Fig. Input leakage current test circuit, HARRIS SEMICOND SECTOR 4302271 QG37b74 CD4572UB Types -H6'0Tft inverting output 'phl I-50* -|Q*n VD0| ~f-90* /-50* 'plh Fig. Transition times propagation delay times, combination logic. 39150 Dimensions layout CD4572UBH. Dimensions parentheses millimeters derived Irom basic inch dimensions indicated, arid graduations mils inch). 3-355 Other recent searchesXAMR30A - XAMR30A XAMR30A Datasheet SMMS698A - SMMS698A SMMS698A Datasheet OPA2652 - OPA2652 OPA2652 Datasheet MMBT8050C - MMBT8050C MMBT8050C Datasheet MMBT8050D - MMBT8050D MMBT8050D Datasheet MMBT8550C - MMBT8550C MMBT8550C Datasheet MMBT8550D - MMBT8550D MMBT8550D Datasheet IFF-701 - IFF-701 IFF-701 Datasheet KIR-1C - KIR-1C KIR-1C Datasheet HSMx-C260 - HSMx-C260 HSMx-C260 Datasheet BLD133DL - BLD133DL BLD133DL Datasheet
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