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1SS220,1SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI
Top Searches for this datasheetSILICON SWITCHING DIODES 1SS220,1SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD millimeters N.C. 0.65i8:l5 Marking Connection Diagram (Top View) Anode Marking 1SS220 1SS221 Cathode FEATURES capacitance: MAX. High speed switching: MAX. Wide applications including switching, limitter, clipper. ABSOLUTE MAXIMUM RATINGS Maximum Voltages Currents 1SS220 1SS221 Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Forward Current Maximum Temperatures Junction Temperature Storage Temperature Range Tstg +150 Thermal Resistance Junction Ambient Rth(j-a) 0-67 ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Forward Voltage 1000 1200 Reverse Current 1SS220 1SS221 Capacitance Reverse Recovery Time Test Circuit. information this document subject change without notice. Before using this document, please confirm that this latest version. devices/types available every country. 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Document D16318EJ3V0DS00 (3rd edition) (Previous DC-1056A) Date Published July 2002 CP(K) Printed Japan Corporation 1985 1SS220,1SS221 TYPICAL CHARACTERISTICS FORWARD CURRENT FORWARD VOLTAGE 1000 0.05 0.02 0.01 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 0.0002 0.0001 REVERSE CURRENT REVERSE VOLTAGE Vp-Forward Voltage^V VR-Reverse Voltage-V FORWARD VOLTAGE TEMPERATURE COEFFICIENT FORWARD CURRENT Ip-Forward Current-mA TERMINAL CAPACITANCE REVERSE VOLTAGE VR-Reverse Voltage-V Datasheet D16318EJ3V0DS 1SS220,1SS221 SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery time Circuit Capacitance VR+VF Test circuit =6.0 input signal output signal Wave forms Datasheet D16318EJ3V0DS 1SS220.1SS221 information this document current July, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. 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