PMBT2222 PMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS

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PMBT2222 PMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS

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bb53131 0025051 HAPX ANER PHILIPS/DISCRETE
PMBT2222
PMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N-P-N silicon transistors, microminiature plastic envelope intended switching linear applications thick thin-film circuits.
QUICK REFERENCE DATA
PMBT2222
PMBT2222A
Collector-base voltage (open emitter) VCBO max.
Collector-emitter voltage (open base) vCEO max.
Emitter-base voltage (open collector) vEBO max.
Collector current (d.c.) max.
Total power dissipation Tami-, ptot max.
D.C. current gain
Transition frequency
IC=20mA;VcE
MECHANICAL DATA
Fig. SOT-23.
Pinning:
base
emitter
collector
0.75 0.60
0.150 0.090
rmax
Dimensions
Marking code
PMBT2222 =p1B PMBT2222A
-0.1
VIEW
April 1991
1823
This Material Copyrighted Respective Manufacturer
PMBT2222
PMBT2222A
L>b53131 OOESflSE HAPX AMER PHILIPS/DISCRETE
RATINGS
Limiting values accordance with Absolute Maximum System (IEC 134)
PMBT2222
PMBT2222A
Collector-base voltage (open emitter) VCBO max.
Collector-emitter voltage (open base) VCEO max.
Emitter-base voltage (open collector) vEBO max.
Collector current (d.c.)
Total power dissipation*
Tamb ptot max.
Storage temperature range Tstg
Junction temperature max.
THERMAL RESISTANCE
From junction ambient
CHARACTERISTICS
unless otherwise specified
PMBT2222 PMBT2222A
Collector cut-off current
iCBO 0,01
'CBO 0,01
'CBO
'CBO
3V;VCE ICEX
Base current
with reverse biased emitter junction
3V;VCE 'BEX
Emitter cut-off current
0;VEB IEBO
Saturation voltages'**
VCEsat
VBEsat 1300
VBEsat
VCEsat 1600 1000
VBEsat 2600 2000
Breakdown voltages
V(BR)CEO
fiA; V(BR)CBO
10/xA v(BR)EBO
Device mounted ceramic substrate
Measured under pulsed conditions avoid excessive dissipation; 0,02.
1824 April 1991
This Material Copyrighted Respective Manufacturer
bbsaiai 0025553
Silicon planar epitaxial transistors
AMER PHILIPS/DISCRETE
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
D.C. current gain
Tamb
Transition frequency
Output capacitance
Input capacitance
h-parameters (common emitter)
input impedance
reverse voltage transfer ratio 10"4
small signal current gain
output admittance
input impedance 0,25 1,25
reverse voltage transfer ratio 10"4
small signal current gain
output admittance
Noise figure
100;uA;Vce
Switching times (between levels)
Turn-on time switched
delay time
rise time
Turn-off time switched from
storage time
fall time
defined frequency which extrapolates unity.
April 1991
1825
This Material Copyrighted Respective Manufacturer
PMBT2222
PMBT2222A
t.t.53R31 002SflSi* HAPX AMER PHILIPS/DISCRETE
Fig. Waveform test circuit delay rise time. -0,5
Pulse generator: Oscilloscope:
pulse duration input impedance
rise time input capacitance
duty factor rise time
Fig. Waveform test circuit storage fall time. 16,2 V;-Vbb kft;
Pulse generator: Oscilloscope:
fall time input impedance
pulse time input capacitance
rise time
1826
April 1991
This Material Copyrighted Respective Manufacturer
bb53T31 HAPX AUER PHILIPS/DISCRETE
PMBT2369
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR
N-P-N transistor plastic SOT-23 envelope intended high-speed switching applications. QUICK REFERENCE DATA
Collector-base voltage (open emitter) VCBO max.
Collector-emitter voltage VCES max.
Collector-emitter voltage (open base) VCEO max.
Collector current (d.c. value) max.
Total power dissipation Tamb ptot max.
D.C. current gain
Storage time
'Con lBoff=
MECHANICAL DATA
Fig. SOT-23.
Pinning:
base
emitter
collector
0.75 0.60
0.150 .0.090
|M5|
0.48
Dimensions
Marking code
PMBT2369
-0.1
VIEW
1991 1827
This Material Copyrighted Respective Manufacturer
fcjb53R31 DOSSBSb PMBT2369 AMER PHILIPS/DISCRETE
_yv_
RATINGS
Limiting values accordance with Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter) VCBO max.
Collector-emitter voltage (VgE VCES max.
Collector-emitter voltage (open base) vCE0 max.
Emitter-base voltage (open collector) VEBO max.
Collector current (d.c. value) max.
Total power dissipation Tarnb ptot max.
Storage temperature Tstg
Junction temperature max.
THERMAL RESISTANCE
From junction ambient free air*
CHARACTERISTICS
unless otherwise specified
Collector cut-off current ICBO 'cbo
Saturation voltages VCEsat vBEsat 0,70 0,25 0,85
d.c. current gain 10mA;VCE V;Tamb
Output capacitance 0;VCb
Small-signal current gain 10V;f= MHz; Tamb
Breakdown voltages IOjiA V(BR)CE0 V(BR)CBO V(BR)EBO V(BR)CES min. min. min. min.
Switching times Tamb
Storage time (see Fig. ICon 'Bon -iBoff typ.
Turn-on time (see Fig. iBon typ.
Turn-off time (see Fig. IBon IBoff toff toff typ.
Device mounted ceramic substrate
1828 April 1991
This Material Copyrighted Respective Manufacturer

PMBT2222 PMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS

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