Collector-Emitter Voltage: VCEO=40V Collector Dissipation: (max)=

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Collector-Emitter Voltage: VCEO=40V Collector Dissipation: (max)=

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2N3903/3904 EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Voltage: VCEO=40V
Collector Dissipation: (max)=625mW
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VcBO
Collector-Emitter Voltage VcEO
Emitter-Base Voltage Vebo
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Tstg -55-150
ELECTRICAL CHARACTERISTICS
TO-92
Emilter Base Collector
Characteristic Symbol Test Conditions Unit
Collector-Base Breakdown Voltage BVcbo lc=10(iA, le=0
'Collector-Emitter Breakdown Voltage BVceo 1mA, Ib=0
Emitter-Base Breakdown Voltage BVebo 10^IA, io=0
Collector Cut-off Current ICEX Vce=30V, Veb=3V
Base Cut-off Current 30V, VEB=3V
Current Gain
:2N3903 Vce=1V, lc=0.1mA
2N3904
2N3903 Vce=1V,
2N3904
2N3903 Vce=1 10mA
2N3904
2N3903 Vce=1V, lc=50mA
2N3904
2N3903 Vce=1V, lc=100mA
2N3904
Saturation Voltage (sat) lc=10mA, lB=1mA lc=50mA,
Saturation Voltage (sat) lc=10mA, Ib=1 lc=50mA, 0.65 0.85 0.95
Output Capacitance Vcb=5V, lE=0
Current Gain Bandwidth Product Vce=20V, 10mA
:2N3903 100MHz
2N3904
Turn Time Vcc=3V, Vbe=0.5V ic=l0mA, =1mA
Turn Time toff Vcc=3V, 10mA
:2N3903 =Ib2
2N3904
"Pulse Test Pulse Width <300//s, Duty Cycle<2%
ELECTRONICS 7^4142
This Material Copyrighted Respective Manufacturer
2N3903/3904 EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN
(mA>, COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE
(0>A), COLLECTOR CURRENT
CURRENT GAIN-BANDWIDTH PRODUCT
(mA), COLLECTOR CURRENT
OUTPUT CAPACITANCE
(V), COLLECTOR-BASE VOLTAGE
ELECrR0N.es
This Material Copyrighted Respective Manufacturer

Collector-Emitter Voltage: VCEO=40V Collector Dissipation: (max)=

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