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Copyright 2009 IEEE. 2009 IEEE Radiation Effects Data Workshop
Dose Rate Test Results National Semiconductor's ELDRS-Free Bipolar Dropout (LDO) Regulator, LM2941 Dose Rates mrad(Si)/s
Kirby Kruckmeyer, Member, IEEE, Larry McGee, Thang Trinh, Benedetto, PhD, Senior Member, IEEE
similar dose rates seen space application, than when exposed high dose (HDR), same total ionizing dose (TID) [2]-[5]. Some versions LM2941 have been shown fail testing doses from krad(Si) [6][7].
Abstract- dose rate (LDR), ultralow dose rate (UDR) high dose rate (HDR) total ionizing dose (TID) test results, drift analysis Enhanced Dose Rate Sensitivity (ELDRS) characterization presented National Semiconductor's EDLRS-free bipolar dropout (LDO) regulator, LM2941WGRLQMLV (5962R9166702VYA). Dose rates used were 0.001, 0.01 rad(Si)/s.
INTRODUCTION
applications regulated power supply various components. Bipolar regulators interest where wide relatively high input voltage range required where there limited radiation flight history data available CMOS regulators. Typical bipolar regulators have operating input voltage ranging from higher down less than above output voltage. Many have been space environments over years. bipolar regulator, LM2941, developed automotive applications over years found usage space applications. adjustable output range dropout voltage full load, support input voltages output load currents will survive input transients (block diagram shown Fig. [1]. Many bipolar regulators have been shown degrade when exposed ionizing radiation. addition, many bipolar regulators experience Enhanced Dose Rate Sensitivity (ELDRS), where product performance degrades more when exposed dose rate (LDR),
Manuscript received July 2009 Kirby Kruckmeyer with National Semiconductor, Santa Clara, 95052 (telephone: 408-721-3548, email: kirby.kruckmeyer@nsc.com). Larry McGee with National Semiconductor, Santa Clara, 95052 (telephone: 408-721-7231, email: larry.mcgee@nsc.com). Thang Trinh with National Semiconductor, Santa Clara, 95052 (telephone: 408-721-2672, email: thang.trinh@nsc.com) Benedetto, with Radiation Assured Devices, Colorado Springs, 80919 (telephone: (719) 531-0800, email:
regulators, often referred dropout voltage LDOs, commonly used space regulators simply
Fig. Block diagram LM2941, Dropout Adjustable Regulator
Historically, testing been done under conditions, typically between rad(Si)/s, outlined MIL-STD-883, TM1019 [8]. Testing under conditions routine, time constraints. take several months years test products same dose rates some applications. been proposed that might possible simulate response irradiating products elevated temperatures [9]. later found that this method valid LM2941 produced National Semiconductor's Arlington, Texas wafer fabrication facility (fab) [6]. test method then proposed using dose rate mrad(Si)/s with design margin parametric drift qualify bipolar products environments [10]. This dose rate been adopted qualification latest revision MIL-STD-883 (rev Test Method 1019 (rev. released February 2006 [8]. Also included MIL-STD-883G, TM1019.7 characterization technique determine product could considered have ELDRS.
978-1-4244-5092-3/09/$26.00 ©2009 IEEE
National Semiconductor released version LM2941 that produced Greenock, Scotland (UK) wafer using unique wafer process flow. National Semiconductor part number Defense Supply Center Columbus (DSCC) Standard Microcircuit Drawing (SMD) number listed Table This version LM2941 been through ELDRS characterization defined MIL-STD-883G, TM1019.7. test method, product qualified krad(Si) could considered "ELDRS-free" [8]. verify validity this test method qualify products dose rate applications using mrad(Si)/s, units were also tested ultralow dose rate (UDR) mrad(Si)/s krad(Si).
TABLE PRODUCT NUMBER TESTED
irradiation done Radiation Assured Devices (RAD) Colorado Springs, Colorado. legs testing done krad(Si) levels. legs were pulled close same levels, always exactly those levels. legs were pulled tested same time legs, level legs tenth that legs. legs were taken krad(Si). legs continued processing krad(Si). Electrical testing done with Eagle ETS500 test system National Semiconductor's Santa Clara radiation facility. same tester test board were used test points. datasheet parameters were tested. legs, electrical testing completed within hour being removed from gamma radiation. legs were shipped overnight from test facility National testing, shipped back overnight resume irradiation. III. MRAD/S) RESULTS units passed testing radiation levels tested with parameters inside irradiation limits listed datasheet SMD. ELDRS Characterization ELDRS characterization results summarized Table III. each parametric test, median parametric drift from krad(Si) calculated units each leg. Some parameters, such Vout tested under number different conditions. results shown Table conditions that resulted worst case parametric drift. last columns Table indicate test results were outside irradiation spec limits. MIL-STD883G, Test Method 1019.7, section 3.13.1.1, parameters, ratio median drift median drift greater than parametric reading outside irradiation test limits, "part considered ELDRS susceptible". Since parametric readings radiation levels were inside irradiation spec limits, part does meet definition being ELDRS susceptible. krad(Si) Results Table lists average parametric readings units from biased leg, along with average parametric drift standard deviation (sigma) parametric drift through krad(Si) units each test legs. parametric specification range test system guardband each parameter shown Table average parametric readings legs each radiation test points plotted Figs.
TEST METHOD product tested listed Table These data only pertain this particular product other versions part have different wafer process. units tested were assembled lead ceramic dual inline package (DIP) burned-in according class flow MIL-PRF38535 [11]. LM2941 ceramic packages have glass seal gold cavity. ELDRS characterization done MIL-STD-883, Test Method 1019.7, section 3.13.1.1. four split under with units biased unbiased during irradiation, shown Table Five samples wafer from three different wafers were used each experimental test leg. three wafers came from same wafer lot. addition, testing done under shown Table
TABLE TEST MATRIX
unbiased units leads tied ground during irradiation. biased units, taken 25.5 through resistor Vout connected ground through resistor load. output load used prevent high power dissipation internal heating that could lead self annealing. Vout using divider Vadjust pin. on/off connected ground (Fig. irradiations were performed using Cobalt-60 gamma source. irradiation performed National Semiconductor's radiation facility Santa Clara, California.
TABLE ELDRS CHARACTERIZATION RESULTS
TABLE AVERAGE READING KRAD AVERAGE (AVE.) STANDARD DEVIATION (SIGMA) PARAMETRIC DRIFT THROUGH KRAD
Fig. Output Voltage radiation exposure. Test conditions listed Table Specification limits this parameter 4.85 5.15
Fig. Line Regulation radiation exposure. Test conditions listed Table Specification limits this parameter
Fig. Dropout Voltage radiation exposure. Test conditions listed Table Upper specification limit this parameter
Fig. Load Regulation radiation exposure. Test conditions listed Table Specification limits this parameter
Fig. Adjust Output radiation exposure. Test conditions listed Table Specification limits this parameter 1.237 1.313
Fig. On/Off Current radiation exposure. Test conditions listed Table Maximum specification limit this parameter
Fig. Quiescent Current radiation exposure. Test conditions listed Table Maximum specification limit this parameter
Fig. Ripple Rejection radiation exposure. Test conditions listed Table Minimum specification limit this parameter
MRAD/S) RESULTS average parametric drift through 13.0 krad(Si) test legs, 12.4 krad(Si) test legs 10.0 krad(Si) test legs summarized Table krad(Si) range chosen because this highest tested tightest range where there were data three dose rates. final columns Table list specification range each parametric test electrical test system
guardbands. guardbands incorporate sources test system variability: test system repeatability tester tester, test board test board setup setup correlation variations. average parametric readings through 20.0 krad(Si) test legs, 32.3 krad(Si) test legs 30.0 test legs plotted Figs.
TABLE AVERAGE PARAMETRIC DRIFT (0.001 RAD/S), (0.01 RAD/S) (169-188 RAD/S TEST LEGS
Fig. Output Voltage radiation exposure. Test conditions listed Table Specification limits this parameter 4.85 5.15
Fig. Load Regulation radiation exposure. Test conditions listed Table Specification limits this parameter
Fig. Dropout Voltage radiation exposure. Test conditions listed Table Maximum specification limit this parameter
Fig. Adjust Voltage radiation exposure. Test conditions listed Table Specification limits this parameter 1.237 1.313
Fig. Line Regulation radiation exposure. Test conditions listed Table Specification limits this parameter
Fig. Quiescent Current radiation exposure. Test conditions listed Table Maximum specification limit this parameter
similar phenomena somewhere region krad(Si) before settling back trend that matched that test legs. CONCLUSIONS ELDRS characterization, described Test Method 1019 MIL-STD-883 demonstrated National Semiconductor's bipolar dropout (LDO) regulator, LM2941WGRLQMLV (5962R9166702VYA). product found ELDRS sensitive krad(Si) definition test method. validity ELDRS characterization this part demonstrated krad(Si) also testing material dose rate mrad/s) lower than that required test method mrad/s). Testing part mrad/s krad requires that part irradiated days. total test time even longer time required shipping performing electrical parametric test interim test points. Data krad(Si) test point will available December, 2009. VII. REFERENCES
"LM2941 Dropout Adjustable Regulator', National Semiconductor, McClure, Gorelick, Yui, Rax, Wiedeman, "Continuing evaluation bipolar linear devices total dose bias dependency ELDRS effects", 2003 IEEE Radiation Effects Data Workshop Record, McClure, Gorelick, Pease, Johnston, "Dose rate bias dependency total dose sensitivity dropout regulators", 2000 IEEE Radiation Effects Data Workshop Record, 100-105 Pease, Dnuham, Seiler, "Total dose dose rate response dropout regulators", 2006 IEEE Radiation Effects Data Workshop Record, 85-93 Pease, McClure, Gorelick, Witczak, "Enhanced lowdose-rate sensitivity low-dropout regulator", IEEE Trans. Nucl. Sci., vol. 2571-2576, Dec. 1998 Abere, Brueggeman, Pease, Krieg, Simons, "Comparative analysis dose-rate accelerated, standard cobalt-60 low-dropout voltage regulator voltage reference", 2000 IEEE Radiation Effects Data Workshop Record, 177-180 Chavez, Rax, Scheick, Johnston, "Total ionizing dose effects bipolar CMOS devices", 2005 IEEE Radiation Effect Data Workshop Record, 144-148 MIL-STD-883 Test Method Standard, Microcircuits, Department Defense, Defense Supply Center Columbus, Columbus, June18, 2004 Pease, Cohn, Fleetwood, Gehlhasusen, Turflinger, Brown, Johnston, proposed hardness assurance test methodology bipolar linear circuits devices space ionizing radiation environment", IEEE Trans. Nucl. Sci., vol. Dec. 1997, 1981-1988 [10] Pease, Gehlausen, Krieg, Titus, Turflinger, Emily, Cohn, "Evaluation proposed hardness assurance bipolar linear circuits with enhanced dose rate sensitivity", IEEE Trans. Nucl. Sci., vol. Dec. 1998, 2665-2672 [11] "Standard Microcircuit Drawing 5962-00501", Defense Supply Center Columbus, Oct. 2009,
Fig. On/Off Current radiation exposure. Test conditions listed Table Maximum specification limit this parameter
Fig. Ripple Rejection radiation exposure. Test conditions listed Table Minimum specification limit this parameter
DISCUSSION Table lists electrical test system guardbands which incorporate sources variability that affect repeatability electrical test system. Since electrical testing done using same electrical tester test board, sources repeatability error were eliminated. test legs were irradiated tested session, also eliminating time based setup repeatability errors. test points were spread over several days several weeks, making those test legs susceptible setup repeatability errors. differences data greater than test system guardband considered significant within experimental error. cases, difference parametric drift between mrad/s) mrad/s) test legs small fraction electrical test system guardband. Fig. indicate that UDR, parametric drifts follow same general trends with exceptions. some parameters (Fig. results indicating start steeper upward trend between krad(Si). Since there data krad(Si) test legs, possible tell this trend unique UDR. krad(Si) plots (Fig. indicate that test legs have

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