BC556/7/8 EPITAXIAL PLANAR TRANSISTOR Complementary With Typ

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BC556/7/8 EPITAXIAL PLANAR TRANSISTOR Complementary With Typ

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GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION
BC556/7/8
EPITAXIAL PLANAR TRANSISTOR
Complementary With Type BC546/547/548.
FEATURES
MAXIMUM RATING (Ta=25
CHARACTERISTIC
SYMBOL RATING VCBO VCEO VEBO -100 -100 -100 Tstg
UNIT
BC556 Collector-Base Voltage BC557 BC558 BC556 Collector-Emitter Voltage BC557 BC558 BC556 Emitter-Base Voltage BC557 BC558 BC556 Collector Current BC557 BC558 BC556 Emitter Current BC557 BC558 Collector Power Dissipation Junction Temperature Storage Temperature Range
MILLIMETERS 4.70 4.80 3.70 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 2.30 0.45 1.00
COLLECTOR BASE EMITTER
TO-92
1998.
Revision
BC556/7/8
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current BC556 Current Gain (Note) BC557 BC558 BC556 Collector-Emitter Saturation Voltage BC557 BC558 BC556 Base-Emitter Saturation Voltage BC557 BC558 Base-Emitter Voltage Transition Frequency Collector Output Capacitance BC556 Noise Figure BC557 BC558 VCE=-6V, IC=-0.1mA Rg=10k f=1kHz VBE(ON) VBE(ON) VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0 VBE(sat) IC=-100mA, IC=-5mA VCE(sat) IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA SYMBOL ICBO TEST CONDITION VCB=-30V, IE=0 MIN. -0.6 TYP. -0.9 -0.9 -0.9 MAX. -0.65 -0.65 -0.65 -1.1 -1.1 -1.1 -0.75 -0.8 UNIT
NOTE According value BC546, BC547, BC548 classified follows. CLASSIFICATION BC556 BC557 BC558 none
1998.
Revision
BC556/7/8
1998.
Revision

BC556/7/8 EPITAXIAL PLANAR TRANSISTOR Complementary With Typ

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