2N2222 2N2222A transistors mounted TO-18 metal package with collector
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2N2222 2N2222A 2N2907 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS
2N2222 2N2222A transistors mounted TO-18 metal package with collector connected case They primarily intended high speed switching. 2N2222 also suitable d.c. v.h.f./u.h.f. amplifiers complements 2N2907 2N2907A Compliance RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range Tamb Tcase=
Ratings
2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222
Value
40(1) +200
Unit
Watts Watts
Applicable 500mA
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction ambient free Thermal Resistance, Junction case 2N2222A 2N2222 2N2222A 2N2222
Value
Unit
COMSET SEMICONDUCTORS
2N2222 2N2222A 2N2907 2N2907A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO ICBO IEBO ICEX VCEO VCBO VEBO
Ratings
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current
Test Condition(s)
VCB=60 IE=0V VCB=50 IE=0V VCB=60 IE=0V, Tj=150°C VCB=50 IE=0V, Tj=150°C VBE=3.0 IC=0 VCE=60 -VBE=3V
Unit
Collector Emitter Breakdown IC=10 IB=0 Voltage Collector Base Breakdown IC=10 IE=0 Voltage Emitter Base Breakdown IE=10 IC=0 Voltage
IC=0.1 VCE=10 IC=1 VCE=10 IC=10 VCE=10
Current Gain
IC=10 VCE=10
Tamb -55°
IC=150 VCE=1 IC=150 VCE=10 IC=500 VCE=10 IC=150 IB=15 IC=500 IB=50 IC=150 IB=15 IC=500 IB=50
VCE(SAT)
Collector-Emitter saturation Voltage
VBE(SAT)
Base-Emitter saturation Voltage
2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222
Symbol
Ratings
Transition frequency Small signal current gain
Test Condition(s)
IC=20 VCE=20 100MHz IC=1 VCE=2.0
Unit
2N2222A 2N2222 2N2222A 2N2222
COMSET SEMICONDUCTORS
2N2222 2N2222A 2N2907 2N2907A
Symbol
rb,CC
Ratings
Delay time Rise time Collector capacitance Emitter capacitance Feedback time constant
Test Condition(s)
IC=150 -VBE=0.5 ,VCB=10 100kHz ,VEB=0.5 100kHz IC=20 VCE=20 31.8MHz
Unit
2N2222A 2N2222A 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222
Pulse conditions
MECHANICAL DATA CASE TO-18
DIMENSIONS
12,7 0,49 2,54 1,16 inches 0,019 0,208 0,193 0,228 0,047 0,045 Emitter Base Collector
Information furnished believed accurate reliable. However, assumes responsability consequences such information errors that could appear.
Data subject change without notice. COMSET SEMICONDUCTORS
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