Tjmax RDS(on) P-TO251 Cool MOSPower Transistor Feature

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Tjmax RDS(on) P-TO251 Cool MOSPower Transistor Feature

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SPD03N60C3 SPU03N60C3
Tjmax RDS(on)
P-TO251
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO252
Type SPD03N60C3 SPU03N60C3
Package P-TO252 P-TO251
Ordering Code Q67040-S4421
Marking 03N60C3 03N60C3
Maximum Ratings Parameter Continuous drain current Pulsed drain current, limited Tjmax Avalanche energy, single pulse Avalanche energy, repetitive limited Tjmax1) Avalanche current, repetitive limited Tjmax Gate source voltage static Gate source voltage >1Hz) Power dissipation, 25°C Operating storage temperature Ptot -55. +150 puls Symbol Value Unit
Page
2003-10-02
Final data Maximum Ratings Parameter Drain Source voltage slope
SPD03N60C3 SPU03N60C3
Symbol dv/dt Value Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Soldering temperature, (0.063 in.) from case Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS GS=0V, ID=3.2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th)
ID=135µ, VGS=VDS DS=600V, VGS=0V, Tj=25°C, Tj=150°C
Symbol min. RthJC RthJA RthJA Tsold
Values typ. max.
Unit
Values typ. 1.26 max.
Unit
Gate-source leakage current
GS=30V, VDS=0V GS=10V, ID=2A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
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2003-10-02
Final data Electrical Characteristics unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
DD=420V, ID=3.2A, GS=0 DD=420V, ID=3.2A
SPD03N60C3 SPU03N60C3
Values min. typ. max. Unit
Symbol Ciss Coss Crss
Conditions
DS2*I D*RDS(on)max, ID=2A GS=0V, DS=25V, f=1MHz
Effective output capacitance, Co(er)
GS=0V, DS=0V 480V
td(on) td(off)
DD=350V, GS=0/10V, ID=3.2A, RG=20
V(plateau) DD=420V, ID=3.2A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
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2003-10-02
Final data Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.054 0.103 0.178 0.757 0.682 0.202 Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. rr/dt
=0V, F=IS =420V, IF=IS diF/dt=100A/µs
SPD03N60C3 SPU03N60C3
Values min. typ. max. A/µs Unit
Symbol
Conditions
TC=25°C
Unit
0.00005232 0.0002034 0.0002963 0.0009103 0.002084 0.024
Ws/K
th,n
case
xternal eatsink
th,n
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2003-10-02
Final data Power dissipation Ptot (TC)
SPD03N60C3
SPD03N60C3 SPU03N60C3
Safe operating area parameter C=25°C
Ptot
0.001 0.01
Transient thermal impedance ZthJC parameter: tp/T
Typ. output characteristic (VDS); Tj=25°C parameter:
6.5V 5.5V 4.5V
ZthJC
0.05 0.02 0.01 single pulse
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2003-10-02
Final data Typ. output characteristic (VDS); Tj=150°C parameter:
SPD03N60C3 SPU03N60C3
Typ. drain-source resistance RDS(on)=f(ID) parameter: Tj=150°C,
5.5V 4.5V 3.5V
4.5V 5.5V 6.5V
RDS(on)
Drain-source on-state resistance RDS(on) (Tj) parameter
SPD03N60C3
Typ. transfer characteristics RDS(on)max parameter:
25°C
RDS(on)
150°C
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2003-10-02
Final data Typ. gate charge (QGate parameter: pulsed
SPD03N60C3
SPD03N60C3 SPU03N60C3
Forward characteristics body diode (VSD) parameter:
SPD03N60C3
(98%) (98%)
QGate
Typ. drain current slope di/dt inductive load, 125°C par.: =380V, VGS=0/+13V, ID=3.2A
1500
Typ. switching time inductive load, j=125°C par.: DS=380V, VGS=0/+13V, ID=3.2
A/µs
1200 1050
di/dt(on)
di/dt
di/dt(off)
td(off) td(on)
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2003-10-02
Final data Typ. switching time (ID), inductive load, j=125°C par.: =380V, VGS=0/+13V,
SPD03N60C3 SPU03N60C3
Typ. drain source voltage slope dv/dt f(RG), inductive load, 125°C par.: DS=380V, VGS=0/+13V, ID=3.2A
V/ns
dv/dt
td(off) td(on)
dv/dt(on)
dv/dt(off)
Typ. switching losses (ID), inductive load, Tj=125°C par.: =380V, VGS=0/+13V,
0.01
Typ. switching losses f(RG), inductive load, Tj=125°C par.: DS=380V, VGS=0/+13V, ID=3.2A
0.06
0.008 0.007
includes SDP06S60 diode commutation losses.
0.048
includes SDP06S60 diode commutation losses.
Eoff
0.042
0.006 0.005 0.004 0.003 0.002 0.001
Eon*
0.036
Eon*
0.03
Eoff
0.024 0.018 0.012 0.006
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2003-10-02
Final data Avalanche (tAR) par.:
SPD03N60C3 SPU03N60C3
Avalanche energy (Tj) par.:
Tj(START) =25°C
Tj(START) =125°C
Drain-source breakdown voltage V(BR)DSS (Tj)
SPD03N60C3
Avalanche power losses parameter: AR=0.2mJ
V(BR)DSS
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2003-10-02
Final data Typ. capacitances (VDS) parameter: GS=0V,
SPD03N60C3 SPU03N60C3
Typ. Coss stored energy Eoss=f(VDS)
Ciss
Eoss
Coss
Crss
Definition diodes switching characteristics
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2003-10-02
Final data P-TO-252-3-1 (D-PAK)
SPD03N60C3 SPU03N60C3
P-TO-251-3-1 (I-PAK)
+0.15 -0.10
±0.1
+0.05 -0.10 +0.08 -0.04
±0.1
6.22 -0.2
0.15 side
±0.4
0.75 ±0.1 2.28 4.56 0.25
+0.08 -0.04
GPT09050
metal surfaces plated, except area cut.
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2003-10-02
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD03N60C3 SPU03N60C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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2003-10-02

Tjmax RDS(on) P-TO251 Cool MOSPower Transistor Feature

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