550V 0.130 FREDFET Power generation loss, high voltage, N-Ch

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550V 0.130 FREDFET Power generation loss, high voltage, N-Ch

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APT5513JFLL
550V 0.130
FREDFET
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
ISOTOP
Recognized"
Increased Power Dissipation Easier Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE
Ratings: 25°C unless otherwise specified.
APT5513JFLL UNIT Volts Amps
3.03
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.130 1000 ±100
(VDS D(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, 17.5A)
Ohms Volts
3-2003 050-7195
Zero Gate Voltage Drain Current (VDS 550V, Zero Gate Voltage Drain Current (VDS 440V, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) td(off) Eoff Eoff Symbol
APT5513JFLL
Test Conditions
275V 25°C RESISTIVE SWITCHING 275V 25°C INDUCTIVE SWITCHING 25°C 367V, 41A, INDUCTIVE SWITCHING 125°C 367V 41A,
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
UNIT
4268
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
UNIT Amps Volts V/ns
25°C 125°C 25°C 125°C 25°C 125°C
(Body Diode) (VGS -35A)
Reverse Recovery Time -35A, di/dt 100A/µs) Reverse Recovery Charge -35A, di/dt 100A/µs) Peak Recovery Current -35A, di/dt 100A/µs) Characteristic Junction Case Junction Ambient
2.16 5.57 15.5 22.4
IRRM
Amps
THERMAL CHARACTERISTICS
Symbol UNIT °C/W
0.33
Repetitive Rating: Pulse width limited maximum junction temperature Pulse Test: Pulse width Duty Cycle MIL-STD-750 Method 3471
0.35
THERMAL IMPEDANCE (°C/W)
Starting +25°C, 2.61mH, Peak dv/dt numbers reflect limitations test circuit rather than device itself. -ID35A di/dt 700A/µs VDSS 150°C includes diode reverse recovery. figures
Reserves right change, without notice, specifications information contained herein.
0.25 0.20
0.15 0.10 0.05
Note:
3-2003
050-7195
0.05 10-5 10-4 SINGLE PULSE
Duty Factor t1/t2 Peak
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
Typical Performance Curves
Junction temp. 0.0988 Power (Watts) 0.230 Case temperature 0.381F 0.0196F MODEL
APT5513JFLL
DRAIN CURRENT (AMPERES)
7.5V
6.5V 5.5V
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED 20.5A
DRAIN CURRENT (AMPERES)
1.30 1.20 VGS=10V
1.10
+125°C +25°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TRANSFER CHARACTERISTICS -55°C
1.00
VGS=20V
0.90 0.80
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95 0.90 0.85
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
20.5A
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
050-7195
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
3-2003
APT5513JFLL
DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED (ON)
10,000 Ciss
CAPACITANCE (pF)
100µS
1,000
Coss
Crss
=+25°C =+150°C SINGLE PULSE VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
10mS
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS=110V VDS=275V
=+150°C =+25°C
VDS=440V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGE GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE SOURCE-DRAIN DIODE FORWARD VOLTAGE
367V
td(on) td(off) (ns)
367V
td(off)
(ns)
125°C
100µH
125°C
100µH
td(on) FIGURE DELAY TIMES CURRENT
FIGURE RISE FALL TIMES CURRENT 2500
1600
367V
125°C
1200
100µH includes diode reverse recovery.
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
2000
Eoff
1500 1000
367V
3-2003
Eoff FIGURE SWITCHING ENERGY CURRENT
125°C 100µH includes diode reverse recovery.
050-7195
GATE RESISTANCE (Ohms) FIGURE SWITCHING ENERGY GATE RESISTANCE
Typical Performance Curves
APT5513JFLL
Gate Voltage
td(on)
Drain Voltage
Gate Voltage
td(off)
Drain Voltage
Drain Current
Drain Current
Switching Energy
Switching Energy
Figure Turn-on Switching Waveforms Definitions
Figure Turn-off Switching Waveforms Definitions
APT30DF60B
D.U.T.
Figure Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Source
Drain
Source terminals shorted internally. Current handling capability equal either Source terminal.
Source Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
050-7195
3-2003
(.129) (.143)
1.95 (.077) 2.14 (.084)

550V 0.130 FREDFET Power generation loss, high voltage, N-Ch

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