Features on-resistance High speed switching drive current gate dr

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Features on-resistance High speed switching drive current gate dr

Datasheet Thumbnail

Top Searches for this datasheet

2SK975
Features
on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive
Outline
TO-92
Source Drain Gate
2SK975
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Symbol VDSS VGSS ID(pulse)* Tstg
Ratings +150
Unit
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note Pulse test |yfs| Ciss Coss Crss td(on) td(off) 0.55 Unit diF/dt A/µs Test conditions ±100
Zero gate voltage drain current IDSS Gate source cutoff voltage Static drain source state resistance
2SK975
Power Temperature Derating Channel Dissipation
Maximum Safe Operation Area
Drain Current
Operation this area limited (on) 0.03 25°C
Case Temperature (°C)
0.01 Drain Source Voltage
Typical Output Characteristics Pulse Test Drain Current
Typical Transfer Characteristics
Drain Current
Pulse Test
75°C
-25°C 25°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage (on) Static Drain Source State Resistance (on) Pulse Test
Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test
0.05 0.05
Gate Source Voltage
Drain Current
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Forward Transfer Admittance Pulse Test
Forward Transfer Admittance Drain Current -25°C Pulse Test 25°C
75°C
0.05 0.05
Case Temperature (°C)
Drain Current
2SK975
Body Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) di/dt A/µs, 25°C Pulse Test Capacitance (pF) 1000 Ciss Crss Reverse Drain Current Drain Source Voltage Coss Typical Capacitance Drain Source Voltage
0.05
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage Switching Time (ns)
Switching Characteristics (off) (on) 0.05 duty
Gate Charge (nc)
Drain Current
Reverse Drain Current Source Drain Voltage Pulse Test Reverse Drain Current
Source Drain Voltage
2SK975
Notice
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.

Features on-resistance High speed switching drive current gate dr

Top Searches for this datasheet

Other recent searches