Misao Higuchi Introduction rapid advances performance functionali

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TRENDS NEXT GENERATION MEMORY
Misao Higuchi
Introduction rapid advances performance functionality digital information devices brought about integration image, voice, communication this multimedia have forced memory vendors develop higher-capacity, faster, lower power consumption memory products. startling drop price DRAMs particular, spite firm growth main memory digital consumer appliance (especially market, caused major shake industry companies struggle recoup losses. consequence this been attempt
manufacturers shift high value added products such those with proposed functions effort make profit shortfall created when DRAM market bottomed out. SRAM, other hand, grabbing attention consumers pursue memories with higher speeds lower power consumption. Markets particularly noteworthy this memory Internet market, where high-speed, multimedia communication devices high demand, mobile communication market, where products that incorporate flash memory MPC-compliant dominate their power consumption features.
With higher-capacity flash memories available, products featuring small flash cards file applications have started appear market. Market's Next Main Memory More than DRAM demand digital consumer appliance market information equipment such workstations. principle applications this DRAM include main memory image processing; majority falling into former category. Figure shows progression main memory architecture. SDRAM (synchronous DRAM) known PC100 currently dominant main memory platforms, memory that will succeed this unclear. following some suggestions. first possibility D-RDRAM (Direct Rambus DRAM) proposed Rambus Inc. Intel's next leading platform, Pentium III. With fast operation high-speed transfer rate GB/s, this protocol control type product positioning itself mainstay DRAM tomorrow's market. There fear, however, that (chipsize package) other technologies raise fabrication costs, possibly decisive factor popularity D-RDRAM market. Consequently, Intel organized August 1999 gathering eight leading semiconductor manufacturers, including Micron Technology Inc., with establishing
N-DRAM (VCM) SDRAM Server
DDR-SDRAM D-RDRAM SDRAM D-RDRAM
VC-SDRAM CY96 CY97 CY98 CY99 CY00 CY01
Fig.1 Progression Main Memory Architecture
Technical Marketing Development Department, Memory Division, Memory Operations Unit
joint promotion D-RDRAM. meeting resolved promote dissemination D-RDRAM next main memory reducing price through exchange data related design fabrication. anticipated, therefore, that with Intel Corp taking initiative this way, will shift D-RDRAM main memory high-end middlerange applications. same time, with change external supply voltage (compared SDRAM), all-new motherboard platform pipeline. effects Intel's higher performance fact that that controls peripheral devices such main memory (FSB: Front Side Bus) will speed increase from Pentium III; tactical point Intel's campaign promote D-RDRAM, which able support such speed. other hand, changing SDRAMbased PC100 memory PC133 memory bus, becomes possible provide high-speed support PC100 platform, which seems direction which industry heading, evidenced declarations memory vendors their intention follow Micron Technology's lead concentrate product development based this SDRAM spec. Prestigious Taiwanese chipset manufacturers such Technology, Inc. have announced development PC133-compliant chipset, indicating start major movement from PC100 PC133. could argued that PC133 caused Intel rethink strategy, repeated delays launch their 820, chipset that D-RDRAM main memory, allow PC133 capture market share 1999-2000. Although late day, seems Intel finally announced development PC133-compliant chipset (Intel Developer Forum) August. trend toward PC133 also succeeded bringing NEC's original V.C.SDRAM (Virtual Channel SDRAM) into spotlight. This V.C.SDRAM, memory product that raises effective bandwidth memory efficiency while maintaining system environment that 100% commonality with conventional SDRAM, forged reputation ideal main memory realizing improved
DRAM Throughput (MemTest)
VC133 VC100 PC133 +28% +34%
+71%
VC133 (IBASES 1.5) VC100 PC133 +20% +19%
+31%
(Final Reality)
VC133 VC100 PC133 +13% +21%
+31%
Business Computing (NortonSI 3.0)
VC133 VC100 PC133 +12% +13%
+26%
Source: InQuest Ltd., U.S.A
Fig.2 Performance Comparison SDRAM VCSDRAM (with Reference PC100) performance without sacrificing compatibility with current system environments. V.C.SDRAM highperformance, power consumption DRAM that performs MHz/133 consumes only half power SDRAM Burst transfer mode. Completely pin-compatible with SDRAM, this product also operates using same commands, with exception some additions peculiar V.C.SDRAM command set. Technology, Inc. from Taiwan already developing chipset with V.C.SDRAM main memory, September formally announced that this product would used from Micron Electronics, Inc. graph Figure shows results performance comparison carried American company InQuest between systems based chipsets developed Technology, Inc. with incorporating SDRAM, other incorporating V.C.SDRAM. Merely changing main memory from SDRAM V.C.SDRAM, same platform demonstrated remarkable increase performance. Further news development chipsets supporting V.C.SDRAM Taiwanese companies (Acer Laboratories Inc.) (Silicon Integrated Systems Corp.) indicates that V.C.SDRAM getting ready take over main memory platforms FY2000. therefore expect memory buses with speeds resulting superior performance over systems employing usual SDRAM. face trend from PC100 PC133, V.C.SDRAM main memory, doubts remain future systems incorporating D-RDRAM, market seems likely therefore remain this chaotic state both after year 2000. Next Generation DRAM performance memory capacity workstation server systems also rise. (Double Data Rate) SDRAM, with double bandwidth SDRAM, already been examined with view employment workstation server systems, which memory capacity tens gigabytes more prerequisite. Consequently, sometime from year 2000 likely shift from SDRAM SDRAM high-end system market. external supply voltage will same D-RDRAM interface will undoubtedly change from LVTTL SSTL-2. clock frequency
MHz, bandwidth Mbps will realizable, thanks this memory's double data rate feature. possibility V.C.DDR memory which NEC's original "virtual channel" core memory technology incorporated being discussed JEDEC. Along with this come realization that performance SDRAM could also improved using similar technology. Photo picture Gbit SDRAM (Double Data Rate Synchronous DRAM) released international circuit engineering conference ISSCC'99 held February last year. This nextgeneration high-capacity, high-speed memory fabricated using state 0.18 minimum line width process technology. This chip realizes Gbit capacity chip area only mm2, achieves data transfer speed Mbps while operating frequency MHz. Also available newly developed features circuit technology such space-saving, power consumption, high-precision clock generator, even more efficient redundancy circuit. Another indication direction thinking toward next-generation technology recent tie-up more than semiconductor manufacturers AMI2 (Advanced Memory International, Inc.) consortium. first item agenda joint promotion development next-generation DDR-2 SDRAM architecture. possibility
Photo Gbit DDR-SDRAM V.C.DDR-2 also raised discussions between AMI2 members virtual channel core technology. DRAMs used image processing applications differ depending segment, even systems with same main memory. higher performance brought about graphics, latest trends home computer games, where
D.D.R SDRAM (3.3
graphics display performance utmost importance, have telling impact technological innovations high-speed DRAM. extreme interest recently decision Sony Corp employ D-RDRAM from Rambus Inc. soon released PlayStation2. D-RDRAM most feasible highspeed DRAM candidate succeed current mainstream SDRAM, with
D.Rambus DRAM Protocol Rambus SDRAM Parallel interface channel LVTTL banks 54-pin TSOP MB/s Prefetch/Restore
PC100 SDRAM Power supply DRAM core interface Bank configuration organization Package Bandwidth* Latency ST-By Power consumption*3 Active Active burst
D.D.R (2.5 Parallel interface SSTL_1
Parallel interface LVTTL banks 54-pin TSOP MB/s BL=1, CL=2
Parallel interface SSTL_2 banks 66-pin TSOP MB/s 37.5 BL=2, CL=2
banks banks) dependent banks (x16 x32) (88-) MB/s 74-pin MB/s
Calculation peak band width (16) organization DRAM DRAM Specification SDRAM, D.D.R SDRAM, SDRAM 100MHz, D.RDRAM 400MHz
Table Function Expansion High-Speed DRAM
DRAM Interface
Product
Protocol DRAM
D.RDRAM
N.DRAM
Parallel interface
SDRAM SDRAM
D.D.R D.D.R SDRAM D.D.R SDRAM
SDRAM
Fig.3 DRAM Lineup Future Development
multitude high-speed DRAMs market present, become impossible think terms simple generation change. most likely eventuality will that current coexistence DRAMs, each with features suited different segments, will continue some time. Table compares functions various highspeed DRAMs Figure shows current future DRAM lineup, where observed that DRAM development will progress along broad interface lines. Future DRAM Market multitude architectures that appeared product diversification became widespread created sudden price drop oligopolistic marketplace. Even DRAM market remains perched very shaky ground indeed. leading factor price drop could said largescale production DRAM American Korean manufacturers. This trend toward large-scale production still apparent players compete grab major share rejuvenating DRAM market. vital influence these market fluctuations seems delay production start Intel's D-RDRAMsupporting chipset 820. postponement above from second quarter latter half 1999 major effect
Asynchronous CMOS/BiCMOS
Asynchronous CMOS/Full CMOS Synchronous CMOS/BiCMOS Pipelined Burst Flow-Through Late Write Synchronous CMOS Latency(1,2) Burst Late Write(1,2) SDR/DDR Data Strobe
Fig.4 SRAM Function Transition demand DRAM from manufacturers, were forced alter their plans using D-RDRAM. Thus would fair that balanced DRAM demand future lies hands Intel. case, trick surviving, triumphing, next high-speed DRAM market having power produce quantity. DRAM will retain dominant market position great cost competitiveness, therefore manufacturer gains competitive edge DRAM industry best able forestall others creating quality products sufficiently large amount. likelihood that competition within DRAM industry: reversion oligopolistic era, increases production scale, pursuit high-added value products, etc., will anything intensify foreseeable future. Dual-role SRAM SRAM generally divided into broad categories: low-power SRAM applications requiring power consumption, high-speed SRAM applications that make most
SRAM's high-speed characteristics. shown functional outline Figure asynchronous SRAM, which name suggests operates asynchronously system clock, used most prevalent type. next type SRAM launched synchronous SRAM, high-speed SRAM that operated synchronization with system clock, used mainly products containing high-performance MPUs, such Intel's Pentium processor, which critical maximize performance. Low-power SRAM mainstay portable telephone other mobile communication markets, with capacities Mbits, rates low-capacity memory comparative DRAM. Small packages major importance this field, surprising that stack MCP, product that succeeds integrating SRAM flash memory single package, drawing considerable interest. Table shows proposed development this stack MCP, cross-section illustration seen Figure With support operation, lowpower SRAM considered leading memory field electronic devices, where some machines already requiring operation range. High-speed SRAM also market cornered cache memory choice workstations, preferred memory PC-LAN network communication
devices. position high-speed SRAM looks particularly good head into year 2000 start feel effects rapidly expanding network multimedia market. growth Internet markets, where high-speed SRAM cache memories dominate, sure bring with sharp increase demand this memory. line with this prediction, developed Mbit asynchronous type high-speed SRAM, also promoting development Mbit synchronous type product. Flash Memory Application Range Expanded with Small Memory Card Flash memory non-volatile memory that electrically rewritten that retains data even after power supply switched off, therefore been promoted small mobile applications such portable electronic devices digital still cameras. applications this memory broadly divided into program storage data storage, latter particular, flash memory generally comes form memory card (also known silicon disk) with capacity tens megabytes. Because these memory cards record image voice data thus eliminate need mechanical drive block, their becoming widespread portable information appliances other areas expanding electronic device market.
Flash Memory Capacity (bits)
SRAM capacity (bits)
Under study Under consideration
Under development Under development
Under study Under consideration Under study Under consideration
Table Proposed Development Stack
Manufacturers currently competing develop standardize small, stamp-sized data storage card; front-runners fast-growing (digital still camera) market being CompactFlash (CF) SmartMedia. same time, even smaller memory cards hitting market, prompting spread into digital consumer electronics applications such player, which supports storage music downloaded from web. example this type card Memory Stick from Sony. Also worthy note newly released Memory Stick, digital music storage product that incorporates copyright protection technology MagicGate. Memory Card released Matsushita Electric Industrial, Ltd. also incorporates copyright protection technology, aimed mainly applications digital network portable information terminal field such data transmission servicing user authentication. This Memory Card essentially based Multimedia Card (MMC) jointly developed American company SanDisk German company Siemens, next-generation memory card created through cooperative efforts SanDisk, Toshiba, Matsushita Electric Industrial. competition this field will undoubtedly rough number memory cards adoption various devices. From point view compatibility between systems convenience (i.e. total system cost performance) however, likely that memory card market will subject natural selection process, with only strongest contenders surviving. also eyes this market, currently developing high-capacity flash memory products that will target these kinds data storage applications. Conclusion facing challenge developing semiconductor memories that will only become memories choice electronic devices wide range application fields, will also, through continued pursuit higher performance lower price, growth semiconductor market.
Bonding wire
Resin
Flash memory chip SRAM chip
Tape
Solder ball
Note: chip's vertical relationship differs depending chip size.
Fig.5 Structure Stack

Misao Higuchi Introduction rapid advances performance functionali

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