.062 [1.57] .100 [2.54] ACTIVE AREA .145 [3.69] .072 [1.84] ACTIVE ARE

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.062 [1.57] .100 [2.54] ACTIVE AREA .145 [3.69] .072 [1.84] ACTIVE ARE

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PHOTONIC X-RAY, Silicon Photodiode Array, Photoconductive DETECTORS INC. (with CsI(Ti) scintillation crystals)Type PDB-C216-C
.062 [1.57] .100 [2.54] ACTIVE AREA .145 [3.69] .072 [1.84] ACTIVE AREA ±.005 [.13] .992 [25.20] .800 [20.32] ANODE .062 [1.57] COMMON CATHODE .300 [7.62] COMMON CATHODE .100 [2.54] ACTIVE AREA ANODE PLACES .425 [10.80] CsI(Ti) CRYSTAL ARRAY ROUND HEADER STRIP .373 [9.47]
.229 [5.82] .399 [10.13]
ELEMENT
CONNECTIONS ELEMENT CATHODE CATHODE
X-RAY SCINTILLATOR CESIUM IODIDE, THALLIUM DOPED, CsI(Ti) CRYSTAL. EMISSION ABSORPTION X-RAY ENERGY.
ELEMENT X-RAY PACKAGE
ACTIVE AREA 2.31mm2
FEATURES .062 inch centers Stackable CsI(Ti) crystals capacitance
DESCRIPTION PDB-C216-C common cathode, monolithic silicon photodiode element array. Designed stacked form line pixels. Supplied with X-Ray CsI(Ti) scintillation crystals.
RESPONSIVITY (A/W)
APPLICATIONS Luggage X-ray X-Ray scanner X-Ray inspection
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +100 +265
SPECTRAL RESPONSE
1000 1100 1200
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator) SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance Spectral Application Range Spectral Response Peak Breakdown Voltage Noise Equivalent Power Response Time 2850 Spot Scan Spot Scan Peak 2x10
1100
range
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDB-C216-C

.062 [1.57] .100 [2.54] ACTIVE AREA .145 [3.69] .072 [1.84] ACTIVE ARE

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