AOA400 uses advanced trench technology provide excellent RDS(ON), gate

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AOA400 uses advanced trench technology provide excellent RDS(ON), gate

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AOA400 N-Channel Enhancement Mode Field Effect Transistor
AOA400 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device suitable load switch applications. Standard Product AOA400A400 Pbfree (meets ROHS Sony specifications). AOA400L Green Product ordering option. AOA400 AOA400L electrically identical.
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) 100m (VGS 4.5V) RDS(ON) 140m (VGS 2.5V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum 0.73
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOA400
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=2.8A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2.5A 54.5 0.56 Units
VGS=2.5V, ID=2A Forward Transconductance VDS=5V, ID=2.8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=2.8A
VGS=10V, VDS=15V, RL=5.6, RGEN=6
IF=2.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2.8A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev3: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOA400
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2.5V (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage 1.0E+01 1.0E+00 RDS(ON) ID=2A 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-05 (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=10V VGS=2.5V Temperature (°C) Figure On-Resistance Junction Temperature ID=2A ID(A) 4.5V 125°C VGS=2V 25°C VGS(Volts) Figure Transfer Characteristics VDS=5V
VGS=4.5V VGS=10V
VGS=4.5V
VGS=2.5V
Alpha Omega Semiconductor, Ltd.
AOA400
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=2.8A Capacitance (pF) Ciss (Volts) Figure Capacitance Characteristics Coss Crss
100.0 TJ(Max)=150°C TA=25°C (Amps) 10.0 RDS(ON) limited (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
TJ(Max)=150°C TA=25°C
10µs Power 100µs
0.1s 10ms
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AOA400 uses advanced trench technology provide excellent RDS(ON), gate

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