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IPD48C-80z: Diode series IPD48 PINs applicable building next gene
Top Searches for this datasheetIPAG Innovative Processing IPD48C-80z: Diode series IPD48 PINs applicable building next generation high rate opto-electronic receivers SONET/SDH (OC-768) including Ethernet applications. distinct phase linearity, highbandwidth IPD48X-80z PINs suitable on-wafer calibrations on-wafer lightwave component testing 80GHz. Features True bandwidth (-3dB) High optical input power dBm) High linear phase characteristic bias voltage leakage current On-chip biasing: IPD48C-80B External biasing: IPD48C-80N Customised layouts possible note: coordinates center-coordinates relative center diode (all coordinates Description IPD48 series vertical diode devices suitable hybrid integration opto-electronic receivers measurement testsets. IPD48 offer high optical input power capability high linear phase behavior. PINs comprise anti-reflection coating passivation. Depending application, types with without on-chip bias networks available. frequencies below external blocking capacitors necessary. Optical Electrical Maximum Ratings Parameter Maximum Optical Input Power Maximum Reverse Voltage Maximum Forward Current Storage Temperatures Operating Temperatures Peak Temperature (unbiased) Humidity Symbol Pmax Vr,max If,max Unit r.h. Remarks +300 +150 short term sec. page IPAG Innovative Processing IPD48C-80z: Diode Optical Electrical Parameters Parameter Optical Wavelength Optical Input Power Polarization Dependence Responsivity Small Signal Bandwidth Lower Frequency Limit Group Delay Time Variations Bias Voltage Leakage Current 1550 optical wavelength external blocking capacitor enables lower frequency limits down 100kHz this maximum bias voltage achieve desired responsivity, also Maximum Ratings on-chip IPD48C-80B biasing external biasing IPD48C-80N Symbol Po,in Vpin Irev 1520 1620 -2.0 Unit Remarks typ. 1550 compression f3dB -1.5 -2.53) Vpin Small signal models description diode frequency behavior available request. Mechanical Parameters Parameter Chip size Thickness sizes Active Optical Region Radius Typ. 1000 1000 Unit Remarks changes after dicing RF-OUT absolute chip size varies within ±100 rf-out pads always close possible edge chip further information, contact Markus Lenders IPAG Innovative Processing phone: ++49 (0)203 379-3841 fax: ++49 (0)203 379-4094 following: INTERNET: E-Mail: http://www.ipag35.com sales@ipag35.com IPAG Innovative Processing reserves right make changes product(s) information contained here without notice. liability assumed result their application. rights under patent accompany sale such product(s). Copyright 2002 IPAG Innovative Processing Rights Reserved. January 2002 IPD48X-80Z page Other recent searchesSN74AUP1G97 - SN74AUP1G97 SN74AUP1G97 Datasheet SH7137 - SH7137 SH7137 Datasheet PCM2900 - PCM2900 PCM2900 Datasheet PCM2902 - PCM2902 PCM2902 Datasheet OPA234 - OPA234 OPA234 Datasheet LF353 - LF353 LF353 Datasheet JGC40-3550 - JGC40-3550 JGC40-3550 Datasheet IDTQS32245 - IDTQS32245 IDTQS32245 Datasheet BHC4236SS - BHC4236SS BHC4236SS Datasheet AN1304 - AN1304 AN1304 Datasheet AN1147 - AN1147 AN1147 Datasheet
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