CY62256V* CY62256V25* CY62256V18* Micro Power Asynchronous SRAM (2.7V

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CY62256V* CY62256V25* CY62256V18* Micro Power Asynchronous SRAM (2.7V

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256K SRAM, Technology, Qualification
CY62256V* CY62256V25* CY62256V18* Micro Power Asynchronous SRAM (2.7V 3.6V) Micro Power Asynchronous SRAM (2.3V 2.7V) Micro Power Asynchronous SRAM (1.6V 2.0V)
CYPRESS TECHNICAL CONTACT QUALIFICATION DATA:
Russell Reliability Manager (408)943-7069
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
PRODUCT/TECHNOLOGY/FAB DESCRIPTION
QTP# 97496, V1.1 Page March, 1999
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Marketing Part Package: Device Description: Cypress Division: Size (stepping):
qualify technology using CY62256V (256K SRAM) CY62256V 28-pin, 300-mil 256K SRAM (32K Micro Power Asynchronous Cypress Semiconductor Corporation Division Rev. 62256V 7C1257A 78.1 mils 96.6 mils What markings Die:
Overall Mask) Level (pre-requisite qualification):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials:
Metal Composition:
Metal
Oxide 6,000 Nitride (both with PECVD) CMOS 0.35µm SiO2 Cypress Semiconductor Bloomington, Fab4/R42
Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Generic Process Technology/Design Rule (µ-drawn):
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
QTP# 97496, V1.1 Page March, 1999
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: JESD22-A112 Moisture Sensitivity Level Assembly Line Process Epoxy Copper
28-pin, Hitachi 9200 Solder Plated, 90%Sn, 10%Pb Silver Spot Attach Material: Wire Material/Size: Level Cypress Philippines (CSPI-R) Ablestik 8361H Gold Thermosonic
Note: Please contact Cypress Representative other packages availability.
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
QTP# 97496, V1.1 Page March, 1999
RELIABILITY TESTS PERFORMED
Stress/Test High Temperature Operating Life Latent Failure Rate Read Record Life Test High Accelerated Saturation Test (HAST) Temperature Cycle
Test Condition (Temp/Bias) Dynamic Operating Condition, 3.9V, 150°C Dynamic Operating Condition, 3.9V, 150°C 140°C, 85%RH, 3.63V Precondition: JESD22 Moisture Sensitivity Level Hrs. 85°C/85%RH MIL-STD-883C, Method 1010, Condition -65°C 150°C Precondition: JESD22 Moisture Sensitivity Level Hrs. 85°C/85%RH MIL-STD-883, Method 2011 Cypress Spec 22-00029 MIL-STD-883, Method 2018 MIL-STD-883, Method 3015.7 Cypress Spec. 25-00020 accordance with JEDEC Cypress Spec. 01-00081
Result
Bond Pull Current Density Analysis Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Latchup Sensitivity Static
2200V 1000V rate=
Accelerated Soft Error Temperature Operating Life
Cypress Spec 25-00055 -30C, 4.3V,
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
QTP# 97496, V1.1 Page March, 1999
RELIABILITY FAILURE RATE SUMMARY
Stress/Test High Temperature Operating Life1, Early Failure Rate High Temperature Operating Life2,3 Long Term Failure Rate
Device Tested/ Device Hours 2,078,500
Fails
Activation Energy
Thermal
Failure Rate
Early Failure Rate performed. Production burn-in Hrs/4.3V/150°C required product. Assuming ambient temperature 55°C junction temperature rise 15°C. Chi-squared estimations used calculate failure rate.
where: =The Activation Energy defect mechanism. Boltzmann's constant 8.62x10-5 eV/Kelvin. junction temperature device under stress junction temperature device conditions.
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
RELIABILITY TEST DATA
QTP# 97496, V1.1 Page March, 1999
QTP#:
DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: ESD-CHARGE DEVICE MODEL, 1000V ASSYLOT# ==============
97496
DURATION ======== ==== FAIL MODE
CY62256V-VC CSPI-R 4709955 619702695/2810 COMP -STRESS: ESD-HUMAN BODY CIRCUIT 883, METHOD 3015, 2200V CY62256V-VC CSPI-R 4709955 619702695/2810 COMP -STRESS: HI-ACCEL SATURATION TEST (140C, 3.63V), PRECOND. 85C/85%RH CY62256V-VC CY62256V-VC CSPI-R CSPI-R 4729067 4729067 619708056 619708056
CY62256V-VC CSPI-R 4735419 619709132/3/4 -STRESS: HIGH TEMPERATURE STORAGE (165C, BIAS) CY62256V-VC CSPI-R 4709955 619702695/2810 CY62256V-VC CSPI-R 4709955 619702695/2810 1000 -STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.9V) CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC CSPI-R CSPI-R CSPI-R CSPI-R CSPI-R 4709955 4709955 4711083 4711083 4711083 619702695/2810 619702695/2810 619703951/2/3 619703951/2/3 619703951/2/3
CY62256V-VC CSPI-R 4715220 619703998/9/40 CY62256V-VC CSPI-R 4715220 619703998/9/40 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.9V) CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC CSPI-R CSPI-R CSPI-R CSPI-R CSPI-R CSPI-R 4709955 4709955 4711083 4711083 4715220 4715220 619702695/2810 619702695/2810 619703951/2/3 619703951/2/3 619703998/9/40 619703998/9/40 UNKNOWN CAUSE (SEE NOTE)
CY62256V-VC CSPI-R 4735419 619709132/3/4 2000 -STRESS: EXTENDED DYNAMIC BURN-IN (150C, 3.9V) CY62256V-VC CSPI-R 4709955 619702695/2810 1000 -STRESS: TEMPERATURE OPERATING LIFE (-30C, 4.3V, MHz) CY62256V-VC CSPI-R 4709955 619702695/2810 -STRESS: READ RECORD LIFE TEST (150C, 3.9V) CY62256V-VC CSPI-R 4709955 619702695/2810 -NOTE: topside crack. related. damage appears wafer handling induced damage. failure
Cypress Semiconductor 256K SRAM, Technology, Devices:CY62256V (Rev. Package: 28-pin, 300-mil
RELIABILITY TEST DATA
QTP# 97496, V1.1 Page March, 1999
QTP#:
97496
DEVICE ==================== STRESS:
ASSY-LOC ========
FABLOT# ========
ASSYLOT# ==============
DURATION ========
====
FAIL MODE
COND. 150C, PRECOND. 85C/85%RH CSPI-R CSPI-R CSPI-R CSPI-R 4709955 4709955 4711083 4711083 619702695/2810 619702695/2810 619703951/2/3 619703951/2/3 1000 1000
CY62256V-VC CY62256V-VC CY62256V-VC CY62256V-VC
CY62256V-VC CSPI-R 4715220 619703998/9/40 CY62256V-VC CSPI-R 4715220 619703998/9/40 1000

CY62256V* CY62256V25* CY62256V18* Micro Power Asynchronous SRAM (2.7V

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