AO4446 uses advanced trench technology provide excellent RDS(ON), gate

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AO4446 uses advanced trench technology provide excellent RDS(ON), gate

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AO4446 N-Channel Enhancement Mode Field Effect Transistor
AO4446 uses advanced trench technology provide excellent RDS(ON), gate charge gate resistance. This device ideally suited applications. Standard Product AO4446 Pb-free (meets ROHS Sony specifications). AO4446L Green Product ordering option. AO4446 AO4446L electrically identical.
(VGS 10V) RDS(ON) 8.5m (VGS 10V) RDS(ON) 14.5m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case
Maximum
Units
TA=25°C TA=70°C TSTG
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4446
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, D=15A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, D=11A Forward Transconductance VDS=5V, ID=15A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 11.8 0.71 1520 VGS=0V, VDS=15V, f=100kHz VGS=0V, VDS=0V, f=1MHz 0.47 33.7 VGS=4.5V, DS=15V, D=15A VGS=10V, VDS=15V, RL=1.0, RGEN=3 IF=15A, dI/dt=100A/µs IF=15A, dI/dt=100A/µs 1825 13.5 14.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4446
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V 5.0V 4.0V 125°C ID(A) (Volts) On-Region Characteristics VGS(Volts) Figure Transfer Characteristics VGS=4.5V Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature VGS=4.5V ID=11A VGS=10V ID=15A VDS=5V
VGS=3.5V
25°C
RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=10V
ID=15A
1.0E+02 1.0E+01 125°C
RDS(ON) 125°C
1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure On-Resistance Gate-Source Voltage
(Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4446
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 2500 VDS=15V ID=15A Capacitance (pF) 2000 1500 1000 Coss Crss
Ciss
(Volts) Figure Capacitance Characteristics
RDS(ON) limited 10µs
10ms 0.1s
100µs
TJ(Max)=150°C TA=25°C
Power
(Amps)
TJ(Max)=150°C TA=25°C
(Volts)
0.001
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.

AO4446 uses advanced trench technology provide excellent RDS(ON), gate

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