AO4444 uses advanced trench technology provide excellent RDS(ON), body

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AO4444 uses advanced trench technology provide excellent RDS(ON), body

Datasheet Thumbnail

Top Searches for this datasheet

AO4444 N-Channel Enhancement Mode Field Effect Transistor
AO4444 uses advanced trench technology provide excellent RDS(ON), body diode characteristics ultra-low gate resistance. This device ideally suited side switch buck converters. Standard Product AO4444 Pb-free (meets ROHS Sony specifications). AO4444L Green Product ordering option. AO4444 AO4444L electrically identical.
(VGS 10V) RDS(ON) 5.5m (VGS 10V) RDS(ON) 7.5m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4444
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 0.72 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.54 VGS=4.5V, VDS=15V, ID=20A 17.6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/µs 15.5 3840 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. June 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4444
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V (Volts) On-Region Characteristics VGS=3V 4.0V ID(A) VGS(Volts) Figure Transfer Characteristics 125°C 25°C
VDS=5V
Normalized On-Resistance RDS(ON) VGS=10V VGS=4.5V
ID=20A VGS=4.5V VGS=10V
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
1.0E+02 1.0E+01 125°C
RDS(ON) 125°C
1.0E+00 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics
ID=20A
25°C
(Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AO4444
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 5000 VDS=15V ID=20A Capacitance (pF) 4000 Ciss 3000 2000 Coss 1000 Crss (Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10ms (Amps) 10.0 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs Power 10µs
0.001
TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
1000
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4444 uses advanced trench technology provide excellent RDS(ON), body

Top Searches for this datasheet

Other recent searches