AO4443 uses advanced trench technology provide excellent RDS(ON), ultr

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AO4443 uses advanced trench technology provide excellent RDS(ON), ultr

Datasheet Thumbnail

Top Searches for this datasheet

AO4443 P-Channel Enhancement Mode Field Effect Transistor
AO4443 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications. Standard Product AO4443 Pb-free (meets ROHS Sony specifications). AO4443L Green Product ordering option. AO4443 AO4443L electrically identical.
-40V -6.5 (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -6.5
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4443
P-Channel Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, D=-6A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, D=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 33.3 -0.75 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 14.2 VGS=-10V, VDS=-20V, D=-6A VGS=-10V, VDS=-20V, RL=3.7, RGEN=3 IF=-6A, dI/dt=100A/µs IF=-6A, dI/dt=100A/µs 26.5 11.5 21.9 14.9 -1.9 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4443
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
VGS=-3.0V -VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage ID=-6A 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C 125°C VGS=-10V VGS=-4.5V Temperature (°C) Figure On-Resistance Junction Temperature VGS=-10V ID=-6A VGS=-4.5V ID=-5A -VGS(Volts) Figure Transfer Characteristics -6.0V -4.0V -10V -5.0V -4.5V VDS=-5V
-3.5V
-ID(A)
125°C 25°C
1.0E+01
RDS(ON)
125°C
Alpha Omega Semiconductor, Ltd.
AO4443
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
VDS=-40V ID=-6A Capacitance (pF) 1000 Ciss -VDS (Volts) Figure Capacitance Characteristics
-VGS (Volts)
Coss Crss
(nC) Figure Gate-Charge Characteristics 100.0 TJ(Max)=150°C, TA=25°C RDS(ON) limited
TJ(Max)=150°C TA=25°C
10ms -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.1s
Power
(Amps)
10.0
100µs
10µs
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4443 uses advanced trench technology provide excellent RDS(ON), ultr

Top Searches for this datasheet

Other recent searches