AO4442 uses advanced trench technology provide excellent RDS(ON), gate
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AO4442 N-Channel Enhancement Mode Field Effect Transistor
AO4442 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages from 4.5V 25V. This device suitable load switch applications. Standard Product AO4442 Pb-free (meets ROHS Sony specifications). AO4442L Green Product ordering option. AO4442 AO4442L electrically identical.
3.1A (VGS 10V) RDS(ON) 130m (VGS 10V) RDS(ON) 165m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4442
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.1A TJ=125°C 0.79 VGS=0V, VDS=37.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=3.1A 2.46 1.34 VGS=10V, VDS=37.5V, RL=12, RGEN=3 IF=3.1A, dI/dt=100A/µs 15.6 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. Sept 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO4442
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage Temperature (°C) Figure On-Resistance Junction Temperature VGS=10V VGS=4.5V VGS=4.5V ID=2A VGS=10V ID=3.1A 4.5V VGS=4V 3.5V VGS(Volts) Figure Transfer Characteristics ID(A) 25°C VDS=5V
125°C
RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C ID=3.1A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C 25°C
Alpha Omega Semiconductor, Ltd.
AO4442
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=37.5V ID=3.1A Capacitance (pF) (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics Crss Coss Ciss
(Volts)
100.0
TJ(Max)=150°C, TA=25°C 10µs 100µs 10ms 0.1s Power TJ(Max)=150°C TA=25°C
10.0 (Amps)
RDS(ON) limited
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance
0.0001
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
D=Ton/T TJ,PK=TJ+PDM.ZJA.RJA RJA=50°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.0001 0.001 0.01
0.01 0.00001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
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