AO4441 uses advanced trench technology provide excellent RDS(ON), ultr
|
|
|
Top Searches for this datasheet
AO4441 P-Channel Enhancement Mode Field Effect Transistor
AO4441 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications. Standard Product AO4441 Pb-free (meets ROHS Sony specifications). AO4441L Green Product ordering option. AO4441 AO4441L electrically identical.
-60V (VGS -10V) RDS(ON) 100m (VGS -10V) RDS(ON) 130m (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -3.1
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4441
P-Channel Electrical Characteristics =25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -0.77 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-4A VGS=-10V, VDS=-30V, RL=7.5, RGEN=3 IF=-4A, dI/dt=100A/µs 31.5 1120 -2.1 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value application depends user's specific board design. current ratingbased thermal resistance given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE Sept 2005
Alpha Omega Semiconductor, Ltd.
AO4441
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
-10V -6.0V -4.5V -5.0V -4.0V VDS=-5V -VGS(Volts) Figure Transfer Characteristics Normalized On-Resistance VGS=-4.5V RDS(ON) Temperature (°C) Figure On-Resistance Junction Temperature VGS=-10V ID=-4A
-3.5V
-ID(A)
125°C 25°C
VGS=-3.0V
-VDS (Volts) On-Region Characteristics
VGS=-4.5V ID=-3A ID=-3A
VGS=-10V
Figure On-Resistance Drain Current Gate Voltage RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 125°C ID=-4A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
25°C
Alpha Omega Semiconductor, Ltd.
AO4441
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: P-CHANNEL
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-30V ID=-4A Capacitance (pF) 1000 1500
Ciss
Coss -VDS (Volts) Figure Capacitance Characteristics Crss
100.0
TJ(Max)=150°C, TA=25°C RDS(ON) limited
10ms -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.1s
Power
(Amps)
10.0
100µs
10µs
TJ(Max)=150°C TA=25°C
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.00001
Single Pulse 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
Other recent searches
TA49031 - TA49031 TA49031 Datasheet
SCAS690A - SCAS690A SCAS690A Datasheet
SA08-13YWA - SA08-13YWA SA08-13YWA Datasheet
HM5241605C - HM5241605C HM5241605C Datasheet
AP9980GH - AP9980GH AP9980GH Datasheet
2SD2151 - 2SD2151 2SD2151 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
