AO4440 uses advanced trench technology provide excellent RDS(ON) gate
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AO4440 N-Channel Enhancement Mode Field Effect Transistor
AO4440 uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications. Standard Product AO4440 Pb-free (meets ROHS Sony specifications). AO4440L Green Product ordering option. AO4440 AO4440L electrically identical
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
AO4440
Channel Electrical Characteristics =25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 0.78 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.65 VGS=10V, VDS=30V, ID=5A VGS=10V, VDS=30V, RL=6, RGEN=3 IF=5A, dI/dt=100A/µs
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
10.5
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
15.9 25.1 28.7
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO4440
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: N-CHANNEL
10.0V 5.0V 4.5V 4.0V VGS=3.5V VGS(Volts) Figure Transfer Characteristics Normalized On-Resistance Figure On-Resistance Drain Current Gate Voltage Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 ID=5A 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure On-Resistance Gate-Source Voltage (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=10V ID=5A VGS=4.5V ID=4A ID(A) 125°C VDS=5V
25°C
(Volts) On-Region Characteristics
RDS(ON) VGS=10V VGS=4.5V
RDS(ON) 25°C 125°C
Alpha Omega Semiconductor, Ltd.
AO4440
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: N-CHANNEL
(Volts) (nC) Figure Gate-Charge Characteristics VDS=30V Capacitance (pF) Ciss Coss Crss (Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10.0 (Amps) 10ms TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.1s 100µs
10µs Power TJ(Max)=150°C TA=25°C
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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