AO4437 uses advanced trench technology provide excellent RDS(ON), gate

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AO4437 uses advanced trench technology provide excellent RDS(ON), gate

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AO4437 P-Channel Enhancement Mode Field Effect Transistor
AO4437 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 1.8V. This device suitable load switch applications. protected. Standard Product AO4437 Pb-free (meets ROHS Sony specifications). AO4437L Green Product ordering option. AO4437 AO4437L electrically identical.
-12V (VGS -4.5V) RDS(ON) (VGS -4.5V) RDS(ON) (VGS -2.5V) RDS(ON) (VGS -1.8V) Rating:
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4437
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-9.6V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-11A Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-10A VGS=-1.8V, ID=-6A VDS=-5V, ID=-11A -0.3 -0.55 12.4 15.9 20.4 -0.74 -4.5 3960 4750 Units
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-6V, ID=-11A
VGS=-4.5V, VDS=-6V, RL=0.55, RGEN=3
IF=-11A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO4437
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-8.0V -2.0V VDS=-5V -ID(A) 125°C 25°C -VDS (Volts) On-Region Characteristics Normalized On-Resistance -VGS(Volts) Figure Transfer Characteristics ID=-6A, VGS=-1.8V ID=-10A, VGS=-2.5V ID=-11A, VGS=-4.5V
-1.5V VGS=-1.0V
RDS(ON) VGS=-1.8V VGS=-2.5V VGS=-4.5V
Figure On-Resistance Drain Current Gate Voltage Temperature (°C) Figure On-Resistance Junction Temperature 1E+01 1E+00 ID=-11A 1E-01 25°C 1E-02 1E-03 125°C 1E-04 1E-05 -VSD (Volts) Figure Body-Diode Characteristics 125°C
RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C
Alpha Omega Semiconductor, Ltd.

AO4437 uses advanced trench technology provide excellent RDS(ON), gate

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