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AO4437 P-Channel Enhancement Mode Field Effect Transistor

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

AO4437 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical.
Features
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 63 21
Max 40 75 30
Alpha & Omega Semiconductor, Ltd.
AO4437
gFS VSD IS
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Alpha & Omega Semiconductor, Ltd.
AO4437
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -ID (A)
40 35 30 RDS(ON) (m) 25 20 15 10 5 0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C
Alpha & Omega Semiconductor, Ltd.