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AO4427 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4427 P-Channel Enhancement Mode Field Effect Transistor
AO4427 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. device protected. Standard Product AO4427 Pb-free (meets ROHS Sony specifications). AO4427L Green Product ordering option. AO4427 AO4427L electrically identical
-30V -12.5 (VGS -20V) RDS(ON) (VGS -20V) RDS(ON) (VGS -10V) Rating:
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -12.5 -10.5
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4427
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-12.5A TJ=125°C VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A -1.7 12.2 11.5 -4.2 2330 12.8 10.3 49.5 2900 -2.5 Units
Static Drain-Source On-Resistance
Forward Transconductance VDS=-5V, ID=-12.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12.5A
VGS=-10V, VDS=-15V, RL=1.2, RGEN=3
IF=-12.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4427
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V VDS=-5V
-ID(A) -4.5V 125°C
VGS=-4V 25°C
-VDS (Volts) On-Region Characteristics
-VGS(Volts) Figure Transfer Characteristics
Normalized On-Resistance
RDS(ON)
VGS=-10V
VGS=-10V ID=-10A
VGS=-10V, VDS=-15V,
ID=-12.5A
VGS=-20V ID=-12.5A
VGS=-20V
Figure On-Resistance Drain Current Gate Voltage ID=-12.5A RDS(ON)
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 1.0E-01
SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 1.0E-03 FUNCTIONS RELIABILITY WITHOUT NOTICE. -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1.0E-04 25°C 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
125°C THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 1.0E-02 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING 125°C
AO4427
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3000 VDS=-15V ID=-12.5A Capacitance (pF) 2500 2000 1500 Coss 1000 (nC) Figure Gate-Charge Characteristics -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
-VGS (Volts)
100.0 RDS(ON) limited 10.0 (Amps) 100µs Power 10µs
TJ(Max)=150°C TA=25°C
VGS=-10V, VDS=-15V, 10ms
0.1s
ID=-12.5A
TJ(Max)=150°C TA=25°C
0.001
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.01
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Single Pulse 0.01 0.00001 0.0001 Pulse Width Figure Normalized Maximum Transient Thermal Impedance 0.001 0.01 1000
Alpha Omega Semiconductor, Ltd.

AO4427 uses advanced trench technology provide excellent RDS(ON), ultr

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