AO4425 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4425 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4425 P-Channel Enhancement Mode Field Effect Transistor
AO4425 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. protected. Standard Product AO4425 Pb-free (meets ROHS Sony specifications). AO4425L Green Product ordering option. AO4425 AO4425L electrically identical.
-38V -14A (VGS -20V) RDS(ON) (VGS -20V) RDS(ON) (VGS -10V) Rating: 4000V
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4425
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, D=-14A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, D=-14A Forward Transconductance VDS=-5V, ID=-14A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 0.71 3800 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, D=-14A 14.1 16.1 12.4 VGS=-10V, VDS=-20V, RL=1.35, RGEN=3 IF=-14A, dI/dt=100A/µs IF=-14A, dI/dt=100A/µs 97.5 45.5 13.5 -2.5 -100 -500 -3.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. -12.8 static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. July 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS=-3V -VDS (Volts) On-Region Characteristics -3.5V -20V -10V -4.5V -ID(A) -VGS(Volts) Figure Transfer Characteristics Normalized On-Resistance VGS=-10V -14A 125°C 25°C VDS=-5V
RDS(ON)
VGS=-10V
VGS=-20V
VGS=-20V -14A
Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage
ID=-14A
-12.8
1.0E+01
1.0E+00 1.0E-01 125°C
RDS(ON)
125°C
1.0E-02 1.0E-03 1.0E-04
25°C
25°C 1.0E-05
-VGS (Volts) Figure On-Resistance Gate-Source Voltage
1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-15V ID=-14A Capacitance (pF) 5000 Ciss
-VGS (Volts)
4000
3000
2000 Coss Crss
1000
(nC) Figure Gate-Charge Characteristics
-VDS (Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10.0 (Amps)
10µs 100µs 10ms 0.1s TJ(Max)=150°C TA=25°C -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Power
TJ(Max)=150°C TA=25°C
0.001
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.01
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-12.8
Single Pulse
0.01 0.00001
0.0001
0.001
0.01 Pulse Width Figure Normalized Maximum Transient Thermal Impedance
1000
Alpha Omega Semiconductor, Ltd.

AO4425 uses advanced trench technology provide excellent RDS(ON), ultr

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