AO4422A uses advanced trench technology provide excellent RDS(ON) gate

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AO4422A uses advanced trench technology provide excellent RDS(ON) gate

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AO4422A N-Channel Enhancement Mode Field Effect Transistor
AO4422A uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications. source leads separated allow Kelvin connection source, which used bypass source inductance. Standard Product AO4422A Pb-free (meets ROHS Sony specifications). AO4422AL Green Product ordering option. AO4422A AO4422AL electrically identical.
10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4422A
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=9A Forward Transconductance VDS=5V, ID=11A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=11A TJ=125°C 11.7 0.76 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11A VGS=10V, VDS=15V, RL=1.35, RGEN=3 IF=11A, dI/dt=100A/µs 0.85 1200 0.003 ±100 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. July 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4422A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage VGS=10V VGS=4.5V 3.5V ID(A) VGS=3V VGS(Volts) Figure Transfer Characteristics 25°C 125°C VDS=5V
VGS=10V ID=11A
VGS=4.5V ID=9A
ID=11A RDS(ON)
1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02
125°C 25°C THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 1.0E-03 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS RELIABILITY WITHOUT NOTICE (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4422A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=11A Capacitance (pF) 1500 1250 1000 Coss Crss (Volts) Figure Capacitance Characteristics
Ciss
100.0 RDS(ON) limited (Amps) 10.0 10µs 10ms 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs Power
0.0001
TJ(Max)=150°C TA=25°C
0.01 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.001
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, Single FUNCTIONS RELIABILITY WITHOUT NOTICE Pulse 0.01 0.00001 1000
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4422A uses advanced trench technology provide excellent RDS(ON) gate

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