AO4418 uses advanced trench technology provide excellent DS(ON) gate c
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AO4418 N-Channel Enhancement Mode Field Effect Transistor
AO4418 uses advanced trench technology provide excellent DS(ON) gate charge. This device suitable load switch applications. Standard Product AO4418 Pb-free (meets ROHS Sony specifications). AO4418L Green Product ordering option. AO4418 AO4418L electrically identical.
11.5A (VGS 20V) RDS(ON) (VGS 20V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings =25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current Power Dissipation
Maximum 11.5
Units
TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4418
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=20V, ID=11.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=10A VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=10A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 14.2 12.3 0.76 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 16.6 VGS=10V, VDS=15V, ID=11.5A VGS=10V, VDS=15V, RL=1.3, RGEN=3 IF=11.5A, dI/dt=100A/µs 14.4 16.9 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. June 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4418
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=10V VGS=20V VGS=4.5V VGS=20V Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 ID=10A 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics ID=10A VGS=10V VGS=3V ID(A) 3.5V 125°C VGS(Volts) Figure Transfer Characteristics 25°C VDS=5V
Figure On-Resistance Drain Current Gate Voltage 125°C (Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
RDS(ON)
AO4418
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 1200 VDS=15V ID=11.5A Capacitance (pF) 1000 Crss (Volts) Figure Capacitance Characteristics Ciss
Coss
100.0 RDS(ON) limited (Amps) 10.0
100µs 10ms 0.1s 10µs Power 0.001
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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