AO4413A uses advanced trench technology provide excellent RDS(ON), ult

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AO4413A uses advanced trench technology provide excellent RDS(ON), ult

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AO4413A P-Channel Enhancement Mode Field Effect Transistor
AO4413A uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. Standard product AO4413A Pb-free (meets ROHS Sony specifications). AO4413AL Green Product ordering option. AO4413A AO4413AL electrically identical.
-30V -15A -10V) RDS(ON) (VGS -20V) RDS(ON) 8.5m (VGS -10V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -12.8
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4413A
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, D=-15A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-10V, D=-15A VGS=-6V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.72 4245 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, D=-15A 15.2 18.8 16.5 VGS=-10V, VDS=-15V, RL=1.0, RGEN=3 IF=-15A, dI/dt=100A/µs IF=-15A, dI/dt=100A/µs 23.5 5500 -1.5 -2.2 ±100 -3.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. -12.8 static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. July 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4413A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-4.5V VGS=-3.5V -VDS (Volts) On-Region Characteristics Normalized On-Resistance VGS=-20V ID=-15A VGS=-10V ID=-15A VGS=-6V ID=-10A -VGS(Volts) Figure Transfer Characteristics 25°C -10V -ID(A) VDS=-5V
125°C
RDS(ON) VGS=-6V VGS=-10V VGS=-20V
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
RDS(ON) 125°C -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-15A
-12.8
1.0E+01
1.0E+00 1.0E-01 125°C
1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C
Alpha Omega Semiconductor, Ltd.
AO4413A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-15V ID=-15A Capacitance (pF) 6000 5000 4000 3000 2000 1000 Crss (nC) Figure Gate-Charge Characteristics -VDS (Volts) Figure Capacitance Characteristics Coss Ciss
-VGS (Volts)
100.0 RDS(ON) limited 10.0 (Amps) 100µs Power 10ms 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance 10µs
TJ(Max)=150°C TA=25°C
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-12.8
Single Pulse
1000
0.01 0.00001
0.0001
0.001 0.01 Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4413A uses advanced trench technology provide excellent RDS(ON), ult

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