AO4412 uses advanced trench technology provide excellent RDS(ON) ultra
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AO4412 N-Channel Enhancement Mode Field Effect Transistor
AO4412 uses advanced trench technology provide excellent RDS(ON) ultra gate charge fast high side switch. source leads separated allow Kelvin connection source, which used bypass source inductance.Standard product AO4412 Pb-free (meets ROHS Sony specifications). AO4412L Green Product ordering option. AO4412 AO4412L electrically identical.
8.5A 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum
Units
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4412
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.5A TJ=125°C 0.76 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
0.45 6.04 1.46 2.56 14.9
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8, RGEN=3
IF=5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics RDS(ON) VGS=10V Figure On-Resistance Drain Current Gate Voltage RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C ID=5A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 (Volts) Figure Body-Diode Characteristics 25°C 125°C Normalized On-Resistance VGS=4.5V Temperature (°C) Figure On-Resistance Junction Temperature VGS=10V VGS=2.5V 4.5V 2.5V ID(A) VGS=1.5V VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=5V
VGS=2.5V
VGS=4.5V
Alpha Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics 1400 VDS=15V ID=8.5A Capacitance (pF) 1200 1000 Coss Crss Ciss
100.0 RDS(ON) limited (Amps) 10.0 100µs Power 10ms 0.1s (Volts) Figure Maximum Forward Biased Safe Operating Area (Note TJ(Max)=150°C TA=25°C
0.001
TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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