AO4411 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4411 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4411 P-Channel Enhancement Mode Field Effect Transistor
AO4411 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications. Standard Product AO4411 Pb-free (meets ROHS Sony specifications). AO4411L Green Product ordering option. AO4411 AO4411L electrically identical.
-30V (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -6.6
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4411
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, D=-8A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, D=-5A Forward Transconductance VDS=-5V, ID=-8A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -1.2 24.5 14.5 -0.76 -4.2 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 18.4 VGS=-10V, VDS=-15V, D=-8A VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/µs IF=-8A, dI/dt=100A/µs 18.9 21.5 12.5 11.5 1120 ±100 -2.4 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Sept 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4411
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V VGS=-3V -VDS (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage RDS(ON) 25°C 1.0E-05 -VGS (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 125°C ID=-7.5A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25°C 125°C 0.80 Temperature (°C) Figure On-Resistance Junction Temperature VGS=-10V Normalized On-Resistance VGS=-4.5V 1.60 ID=-7.5A 1.40 VGS=-10V -VGS(Volts) Figure Transfer Characteristics -3.5V -4.5V -ID(A) 125°C 25°C VDS=-5V
1.20
VGS=-4.5V
1.00
Alpha Omega Semiconductor, Ltd.
AO4411
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics 1500 VDS=-15V ID=-8A Capacitance (pF) 1250 1000 -VDS (Volts) Figure Capacitance Characteristics
Ciss
Coss
Crss
100.0
TJ(Max)=150°C, TA=25°C
10µs 100µs Power
TJ(Max)=150°C TA=25°C
(Amps)
10.0
RDS(ON) limited 0.1s
10ms
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.

AO4411 uses advanced trench technology provide excellent RDS(ON), ultr

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