AO4410 uses advanced trench technology provide excellent RDS(ON), shoo
|
|
|
Top Searches for this datasheet
AO4410 N-Channel Enhancement Mode Field Effect Transistor
AO4410 uses advanced trench technology provide excellent RDS(ON), shoot-through immunity, body diode characteristics ultra-low gate resistance. This device ideally suited side switch Notebook core power conversion. Standard product AO4410 Pb-free (meets ROHS Sony specifications). AO4410L Green Product ordering option. AO4410 AO4410L electrically identical.
10V) RDS(ON) 5.5m (VGS 10V) RDS(ON) 6.2m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum
Units
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4410
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 0.64 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72.4 VGS=10V, VDS=15V, ID=18A 13.4 16.8 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/µs 22.2 19.5 10500 0.005 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4410
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2.5V (Volts) On-Region Characteristics Normalized On-Resistance VGS=4.5V ID=18A VGS=4.5V ID(A) VGS=2V VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=5V
RDS(ON)
VGS=10V
VGS=10V
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+02 1.0E+01
RDS(ON)
ID=18A 125°C
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05
125°C
25°C
25°C
FUNCTIONS RELIABILITY WITHOUT NOTICE.
(Volts) Figure On-Resistance Gate-Source Voltage
(Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4410
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 100000 VDS=15V ID=18A Capacitance (pF) 10000 Ciss
1000 Crss
Coss
(Volts) Figure Capacitance Characteristics
100.0
RDS(ON) limited 10ms 0.1s
100µs Power 10µs 0.001
TJ(Max)=150°C TA=25°C
(Amps)
10.0
TJ(Max)=150°C TA=25°C
(Volts)
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
FUNCTIONS RELIABILITY WITHOUT NOTICE.
Single Pulse 0.001 0.01 0.00001 0.0001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
Other recent searches
uPA1700A - uPA1700A uPA1700A Datasheet
TR8000 - TR8000 TR8000 Datasheet
S10A40S7 - S10A40S7 S10A40S7 Datasheet
IDT71024S - IDT71024S IDT71024S Datasheet
F812MPL - F812MPL F812MPL Datasheet
2SC4957 - 2SC4957 2SC4957 Datasheet
1N5400 - 1N5400 1N5400 Datasheet
1N5408 - 1N5408 1N5408 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
