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Dual Port SRAM Technology, Shrink CY7C0251 CY7C025 CY7C0241 CY7C0
Top Searches for this datasheet96091/96393, Version September 1996 Dual Port SRAM Technology, Shrink CY7C0251 CY7C025 CY7C0241 CY7C024 CY7C145 CY7C144 CY7C139 CY7C138 CY7C133 CY7C143 CY7C016 CY7C006 Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM Dual Port SRAM PRODUCT DESCRIPTION (for qualification) Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Package: CY7C025 84-Lead Plastic Lead Chip Carrier (CY7C025) -Pin Thin Quad Flat Pack (CY7C016) 100-Pin Thin Quad Flat Pack (CY7C025) Dual Port SRAM Cypress Semiconductor Corporation Division Rev. CY7C025B mils mils What markings Die: Device Description: Cypress Division: Size (stepping): Overall Mask) Level (pre-requisite qualification): TECHNOLOGY/FAB PROCESS DESCRIPTION Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process None CMOS, Double Poly, Double Metal /0.65 SiO2 Cypress Semiconductor, Bloomington, Fab3/R28 Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal Ti/TiW/AL-Si/TiW, 500A/1200A/6000A/1200A Metal TiW/Al-Si/Ti 1200A/10000A/150A 7000A TEOS 6000A Oxynitride PAGE CYPRESS SEMICONDUCTOR PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, Name: 84-Lead Plastic Lead Chip Carrier (CY7C025) 80-Pin Thin Quad Flat Pack (CY7C016) 100-Pin Thin Quad Flat Pack (CY7C025) Sumitomo EME-7320 (TQFP) Sumitomo EME-6300H (PLCC) Hitachi PIX-8144 (PLCC) Copper Solder Plated, 85%Sn, 15%Pb Silver Spot Paste Thermosonic Attach Material: Wire Material/Size: Level Anam, Korea Silver Epoxy Gold Mold Compound Name/Manufacturer: Coatings, used): Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: JESD22-A112 Moisture Sensitivity Level: Name/Location Assembly (prime) facility: Note: Please contact Cypress Representative other package availability. PAGE CYPRESS SEMICONDUCTOR RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours 1951 Devices 180,000 DHRs Fails Activation Energy Thermal3 Failure Rate4 FITs Assuming ambient temperature 55°C junction temperature rise 15°C. Chi-squared estimations used calculate failure rate. Thermal Acceleration Factor calculated from Arrhenius equation where: =The Activation Energy defect mechanism. Boltzmann's constant 8.62x10-5 eV/Kelvin. junction temperature device under stress junction temperature device conditions. Failure rate based Dual Port SRAM, technology qualification (QTP 95226 96091). PAGE CYPRESS SEMICONDUCTOR RELIABILITY TESTS PERFORMED Stress/Test High Temperature Operating Life High Temperature Steady State Life Read Record Life Test High Accelerated Saturation Test (HAST) High Accelerated Saturation Test (HAST) Temperature Cycle Temperature Cycle Pressure Cooker Test Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Latchup Sensitivity Alpha Particle Sensitivity Current Density Test Condition (Temp/Bias) Dynamic Operating Condition, 5.75V, 150°C Static Operating condition, 5.75V, 150°C Dynamic Operating Contidion, 5.75V, 150°C 130°C, 5.5V Precondition: bake, Solder Reflow 140°C, 5.5V Precondition: bake 30°C/60%RH MIL-STD-883C, Method 1010, Condition -65°C 150°C Precondition: Bake, Solder Relfow JEDEC22 CONDITION -40°C 125°C Precondition: Bake, Solder Reflow 121°C, 100% MIL-STD-883, Method 3015.7 Cypress Spec. 25-00020 accordance with JEDEC Cypress Spec. 01-00081 Cypress Spec. 25-00055 Cypress Spec. 22-00029 Result 2,200V 1,000V PAGE CYPRESS SEMICONDUCTOR RELIABILITY TEST DATA QTP#: DEVICE ==================== STRESS: CY7C025-AC ASSY-LOC ======== FABLOT# ======== 96091/96393 DURATION ======== ==== FAIL MODE ASSYLOT# ============== HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) KOREA-Q 3604479 349602347 CY7C025-JC KOREA-A 3604479 349602348 -STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRECONDITION BAKE SOLDER REFLOW CY7C016-AC KOREA-Q 3604479 349602669 -STRESS: CY7C025-JC CY7C025-JI HI-ACCEL SATURATION TEST (140C, 85%RH, 5.5V), PRECONDITION BAKE 30C/60%RH KOREA-Q KOREA-A 3604479 3623123 349602348 349609319 CY7C025-JC KOREA-A 3625406 349610027 -STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 -STRESS: READ RECORD LIFE TEST (150C, 5.75V) CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 -STRESS: TEMP CYCLE, COND. 150C, PRECONDITION DRY-BAKE CY7C025-AC KOREA-Q 3604479 349602347 CY7C025-AC KOREA-Q 3604479 349602347 1000 -STRESS: CY7C025-JC CY7C025-JC TEMP CYCLE, JEDEC22 COND. 125C, PRECONDITION DRY-BAKE KOREA-A KOREA-A 3601138 3601138 349602143 349602143 1500 CY7C025-JC KOREA-A 3602236 349602349 CY7C025-JC KOREA-A 3602236 349602349 1500 PAGE CYPRESS SEMICONDUCTOR DEVICE RELATED RELIABILITY TEST DATA QTP#: DEVICE ==================== STRESS: CY7C025-JC ASSY-LOC ======== FABLOT# ======== ASSYLOT# ============== 95226 DURATION ======== ==== FAIL MODE HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) KOREA-A 3531005 349522865 CY7C025-JC KOREA-A 3543592 349524484 -STRESS: HI-ACCEL SATURATION TEST (140C, 85%RH, 5.5V), PRECONDITION BAKE CY7C025-JC KOREA-A 3531005 349522865 -STRESS: CY7C025-JC CY7C025-JC HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) KOREA-A KOREA-A 3531005 3531005 349522865 349522865 CY7C025-JC KOREA-A 3543592 349524484 CY7C025-JC KOREA-A 3543592 349524484 -STRESS: CY7C025-JC CY7C025-JC HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) KOREA-A KOREA-A 3531005 3531005 349522865 349522865 CY7C025-JC KOREA-A 3543592 349524484 CY7C025-JC KOREA-A 3543592 349524484 -STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C025-JC KOREA-A 3531005 349522865 -STRESS: READ RECORD LIFE TEST (150C, 5.75V) CY7C025-JC KOREA-A 3531005 349522865 CY7C025-JC KOREA-A 3531005 349522865 CY7C025-JC KOREA-A 3531005 349522865 -STRESS: CY7C025-JC TEMP CYCLE, COND. 150C, PRECONDITION DRY-BAKE KOREA-A 3543592 349524484 CY7C025-AC KOREA-Q 3544800 349525183 Note: 95226, original qualification Dual Port SRAM, technology. 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