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AO4407 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4407 P-Channel Enhancement Mode Field Effect Transistor
AO4407 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. Standard Product AO4407 Pb-free (meets ROHS Sony specifications). AO4407L Green Product ordering option. AO4407 AO4407L electrically identical.
-30V (VGS -20V) RDS(ON) (VGS -20V) RDS(ON) (VGS -10V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4407
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-10A Static Drain-Source On-Resistance TJ=125°C VGS=-20V, ID=-10A -1.7 -0.72 -2.5 ±100 Units -4.2 2076 37.2 10.4 12.4 25.6 2500
VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-10A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V, RL=1.25, RGEN=3
IF=-12A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Sept 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO4407
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -VDS (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C ID=-10A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 125°C VGS=-10V VGS=-6V Normalized On-Resistance ID=-10A VGS=-10V -4.5V -5.5V -ID(A) VDS=-5V 125°C VGS=-4V 25°C -VGS(Volts) Figure Transfer Characteristics
VGS=-4.5V
Temperature (°C) Figure On-Resistance Junction Temperature
Alpha Omega Semiconductor, Ltd.
RDS(ON)
AO4407
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics 3000 VDS=-15V ID=-12A Capacitance (pF) 2500 2000 1500 Coss 1000 -VDS (Volts) Figure Capacitance Characteristics Crss
Ciss
100.0
TJ(Max)=150°C TA=25°C
100µs 10ms 0.1s Power 10µs
TJ(Max)=150°C TA=25°C
(Amps)
RDS(ON) 10.0 limited
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4407 uses advanced trench technology provide excellent RDS(ON), ultr

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