| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
AO3422 uses advanced trench technology provide excellent RDS(ON) gate
Top Searches for this datasheetAO3422 N-Channel Enhancement Mode Field Effect Transistor AO3422 uses advanced trench technology provide excellent RDS(ON) gate charge. offers operation over wide gate drive range from 2.5V 12V. This device suitable load switch. Standard product AO3422 Pb-free (meets ROHS Sony specifications). AO3422L Green Product ordering option. AO3422 AO3422L electrically identical. 2.1A (VGS 4.5V) RDS(ON) 160m (VGS 4.5V) RDS(ON) 200m (VGS 2.5V) TO-236 (SOT-23) View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current Maximum 1.25 Units TSTG TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol Steady-State Steady-State Units °C/W °C/W °C/W Alpha Omega Semiconductor, Ltd. AO3422 Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=44V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=2.1A TJ=125°C 0.78 ±100 Units DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 12.6 16.5 VGS=4.5V, VDS=27.5V, ID=2.1A VGS=10V, VDS=27.5V, RL=12, RGEN=3 IF=2.1A, dI/dt=100A/s IF=2.1A, dI/dt=100A/s value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev0: 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS (Volts) On-Region characteristics Normalized On-Resistance RDS(ON) VGS=2.5V VGS=4.5V Figure On-Resistance Drain Current Gate Voltage 1E+01 RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 1E-05 (Volts) Figure Body-Diode Characteristics 25°C 125°C ID=2.3A 1E+00 125°C 1E-01 1E-02 1E-03 1E-04 25°C Temperature (°C) Figure On-Resistance Junction Temperature VGS=2.5V VGS=4.5 VGS=2V 25°C 1.25 1.75 2.25 VGS(Volts) Figure Transfer Characteristics ID(A) 2.5V 3.5V VDS=5V 125°C Alpha Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS (Volts) (nC) Figure Gate-Charge Characteristics VDS=27.5V ID=2.1A Capacitance (pF) (Volts) Figure Capacitance Characteristics Coss Crss Ciss 100.0 RDS(ON) limited (Amps) 10.0 100s 0.1s (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 10ms TJ(Max)=150°C TA=25°C Power TJ(Max)=150°C TA=25°C 0.001 0.01 1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=100°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1000 Pulse Width Figure Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. Other recent searchesTB0673A - TB0673A TB0673A Datasheet Si5908DC - Si5908DC Si5908DC Datasheet SF31DG - SF31DG SF31DG Datasheet SF31JG - SF31JG SF31JG Datasheet RE522-HP - RE522-HP RE522-HP Datasheet PM7380 - PM7380 PM7380 Datasheet MSP430x13x - MSP430x13x MSP430x13x Datasheet MSP430x14x - MSP430x14x MSP430x14x Datasheet IRFR420A - IRFR420A IRFR420A Datasheet IRFU420A - IRFU420A IRFU420A Datasheet 1776126 - 1776126 1776126 Datasheet 1614490000 - 1614490000 1614490000 Datasheet 1614500000 - 1614500000 1614500000 Datasheet
Privacy Policy | Disclaimer |