PRODUCT DESCRIPTION (for qualification) Information provided this

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SRAM 2.5, SHRINK MARKETING PART NUMBER CY7C109 DEVICE DESCRIPTION 128K Static RAM, 400-mil wide package
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C109 SRAM Cypress Semiconductor Corporation Rev. 7C109B June/1994 mils mils What markings Die:
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Metal Composition: Metal 6000A with 1500A Barrier Metal: Ti/TiW 500A/1200A Metal TiW/Al/Ti 1500A/10000A/150A None CMOS, Double Poly, Double Metal /0.65 SiO2 165A Cypress Semiconductor, Bloomington, R25D
Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process
7,000A TEOS/6,000A Oxynitride Si3N4 Polyimide
Generic Process Technology/Design Rule (µ-drawn):
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 85%Sn, 15%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Anam, Korea Korea-A mils mils Silver Epoxy Gold 32-pin, 400-mil mils side Sumitomo EME-6300H(R)
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CYPRESS SEMICONDUCTOR
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None None Process Change: Cross Licensee/Licensor: CY7C108, 600-mil package PDIP >4,400V
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 140°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Autoclave (PCT, 121°C, 100% Tests (MIL-STD 883, method 3015) Read Record Life Test Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Other: Current Density 150°C
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CYPRESS SEMICONDUCTOR
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: SRAM, Technology Cypress Semiconductor Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Type Compound Assembly Line Location Volt Availabilit Rating (mm/yy)
Supplier's Part Number Rated Speed
Process Line CY7C109 -**VC -**PC 32.4 32.4 PDIP 7C109B 0.65µ CMOS Oxynitride Sumitomo Anam, Korea >4,400V Hysol
Note:
"**" covers rated speeds 35ns
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C109 32-pin, 400-mil
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloomington, Anam, Korea
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device CY7C109-VC CY7C109-VC CU7C109-VC Assy 49403634 49403973 49404374 3406190 3408310 3409364 Hours 0/457 0/340 0/243 Cumulative 0/1040
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device CY7C109-VC CY7C109-VC Assy 49403634 49403973 3406190 3403810 Hours 0/137 0/132 Hours 0/137 0/132 Cumulative 0/269
High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Device CY7C109-VC CY7C109-VC Assy 49403634 49403973 3406190 3408310 Hours 0/80 0/76 Hours 0/80 0/76 Cumulative 0/156
Temperature Cycle (Condition -65°C 150°C) Device CY7C109-VC CY7C109-VC Assy 49403634 49403973 3406190 3408310 Cycles 0/45 0/45 Cumulative 0/90
Autoclave (PCT, bias, 121°C, 100%RH, 15psig) Device CY7C109-VC CY7C109-VC Assy 49403634 49403973 3406190 3408310 Hours 0/45 0/45 Cumulative 0/90
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C109 32-pin, 400-mil
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloomington, Anam, Korea
High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85%RH, 15psig) Device CY7C109-VC CY7C109-VC Assy 49403634 49403973 3406190 3408310 Hours 0/45 0/45 Cumulative 0/90
Read Record 150°C, 5.75V) Device CY7C109-VC Assy 49403634 3406190 Hours 0/20 Hours 0/10 Cumulative 0/20
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CYPRESS SEMICONDUCTOR
Device Reliability Summary
SRAM, SHRINK CY7C109 Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+4,400V Unit >-4,400V >+4,400V Unit >-4,400V >+4,400V Unit >-4,400V (Highest passing voltage, +10% Guard-banded)
Latchup Testing Cypress Internal Latch-up Procedure Socket Temp 125°C
Other miscellaneous tests Current Density: Completed Pass
Other qualifications that affect this product family process Qualification 94052 Description 256K SRAM, SHRINK

PRODUCT DESCRIPTION (for qualification) Information provided this

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